Image sensor and electronic apparatus including the same
This disclosure relates to image sensors and electronic apparatuses including the same. An image sensor including: a pixel area including shared pixels, wherein each of the shared pixels includes at least two photodiodes that form a group and share a floating diffusion (FD) area; and a transistor (TR) area adjacent to the pixel area, wherein the TR area includes transistor sets corresponding to the shared pixels, wherein, when a first shared pixel and a second shared pixel are arranged adjacent to each other in a first direction, a first TR set corresponding to the first shared pixel and a second TR set corresponding to the second shared pixel share a source region of a first selection TR.
1. An image sensor, comprising:
a first shared pixel including eight photodiodes that share a floating diffusion (FD) area, the eight photodiodes forming four photodiode pairs, each of the photodiode pairs including two adjacent photodiodes arranged along a first direction; and
a first transistor (TR) set disposed adjacent to the first shared pixel and comprising a top selection TR, a top source follower TR, a top reset TR, a bottom reset TR, a bottom source follower TR, and a bottom selection TR, which are arranged along a second direction crossing the first direction in the order of the top selection TR, the top source follower TR, the top reset TR, the bottom reset TR, the bottom source follower TR and the bottom selection TR,
wherein the first TR set has a mirror symmetry structure with respect to an equivalent FD area shared by the top reset TR and the bottom reset TR.
2. The image sensor of claim 1 , wherein a second shared pixel and a third shared pixel are adjacent to the first shared pixel along the second direction on opposite sides of the first shared pixel, the first TR set and a second TR set of the second shared pixel share a source region of the top selection TR, and the first TR set and a third TR set of the third shared pixel share a source region of the bottom selection TR.
3. The image sensor of claim 2 , wherein the first TR set and the second TR set are in a mirror symmetry relationship with respect to the source region of the top selection TR, the first TR set and the third TR set are in a mirror symmetry relationship with respect to the source region of the bottom selection TR, and no isolation area is formed between the first TR set and the second TR set and between the first TR set and the third TR set.
4. The image sensor of claim 1 , wherein the equivalent FD area is connected to a gate electrode of the top source follower TR and a gate electrode of the bottom source follower TR through an interconnection.
5. An image sensor, comprising:
a first shared pixel including eight photodiodes that share a floating diffusion (FD) area, the eight photodiodes forming four photodiode pairs, each of the photodiode pairs including two adjacent photodiodes arranged along a first direction; and
a first transistor (TR) set disposed adjacent to the first shared pixel and comprising a top selection TR, a top source follower TR, a top reset TR, a bottom reset TR, a bottom source follower TR, and a bottom selection TR, which are sequentially arranged along a second direction crossing the first direction,
wherein the first TR set has a mirror symmetry structure with respect to an equivalent FD area shared by the top reset TR and the bottom reset TR, wherein a second shared pixel and a third shared pixel are adjacent to the first shared pixel along the second direction on opposite sides of the first shared pixel, the first TR set and a second TR set of the second shared pixel share a source region of the top selection TR, and the first TR set and a third TR set of the third shared pixel share a source region of the bottom selection TR.
6. The image sensor of claim 5 , wherein the first TR set and the second TR set are in a mirror symmetry relationship with respect to the source region of the top selection TR, the first TR set and the third TR set are in a mirror symmetry relationship with respect to the source region of the bottom selection TR, and no isolation area is formed between the first TR set and the second TR set and between the first TR set and the third TR set.
7. An image sensor, comprising:
a first shared pixel including eight photodiodes that share a floating diffusion (FD) area, the eight photodiodes forming four photodiode pairs, each of the photodiode pairs including two adjacent photodiodes arranged along a first direction; and
a first transistor (TR) set disposed adjacent to the first shared pixel and comprising a top selection TR, a top source follower TR, a top reset TR, a bottom reset TR, a bottom source follower TR, and a bottom selection TR, which are sequentially arranged along a second direction crossing the first direction,
wherein the first TR set has a mirror symmetry structure with respect to an equivalent FD area shared by the top reset TR and the bottom reset TR,
wherein the equivalent FD area is connected to a gate electrode of the top source follower TR and a gate electrode of the bottom source follower TR through an interconnection.