Method for producing a silicon carbide semiconductor component
A semiconductor component includes: gate structures extending into a silicon carbide body from a first surface and having a width along a first horizontal direction parallel to the first surface that is less than a vertical extent of the gate structures perpendicular to the first surface; contact structures extending into the silicon carbide body from the first surface, the gate and contact structures alternating along the first horizontal direction; shielding regions which, in the silicon carbide body, adjoin a bottom of the contact structures and are spaced apart from the gate structures along the first horizontal direction; and source regions between the first surface and body regions. The body regions form pn junctions with the source regions and include main sections adjoining the gate structures and contact sections adjoining the contact structures. A vertical extent of the contact structures is greater than the vertical extent of the gate structures.
1. A semiconductor component, comprising:
gate structures extending into a silicon carbide body from a first surface, the gate structures having a width along a first horizontal direction parallel to the first surface;
contact structures extending into the silicon carbide body from the first surface, the gate structures and the contact structures alternating along the first horizontal direction;
shielding regions which, in the silicon carbide body, adjoin a bottom of the contact structures but not a bottom of the gate structures and are spaced apart from the gate structures along the first horizontal direction; and
source regions between the first surface and body regions,
wherein the body regions form pn junctions with the source regions,
wherein the body regions comprise main sections adjoining the gate structures and, between the main sections and the contact structures, contact sections adjoining the contact structures,
wherein the contact structures extend from the first surface to a first depth in the silicon carbide body,
wherein the width of the gate structures is less than the first depth,
wherein the gate structures extend from the first surface to a second depth in the silicon carbide body,
wherein the first depth is greater than the second depth,
wherein the gate structures comprise a gate dielectric and a gate electrode,
wherein the gate electrode comprises first sections of a metal structure that adjoin the gate dielectric,
wherein the contact structures comprise second sections of the metal structure that adjoin the silicon carbide body.
2. The semiconductor component of claim 1 , wherein the contact sections have a higher dopant concentration than the main sections.
3. The semiconductor component of claim 1 , wherein a width of the shielding regions along the first horizontal direction is greater than a width of the contact structures.
4. The semiconductor component of claim 1 , wherein mesa sections of the silicon carbide body formed between the gate structures and the contact structures include the body regions, wherein the body regions form additional pn junctions with a drift structure, and wherein the drift structure forms pn junctions with the shielding regions.
5. The semiconductor component of claim 4 , wherein a mesa width of the mesa sections along the first horizontal direction is less than the second depth.
6. The semiconductor component of claim 4 , wherein sections of the contact structures that adjoin the drift structure form Schottky contacts.
7. The semiconductor component of claim 1 , wherein the metal structure comprises at least a first partial layer and a second partial layer, wherein a first section of the first partial layer in the gate structures adjoins the gate dielectric and a second section of the first partial layer in the contact structures adjoins the silicon carbide body, and wherein the second partial layer bears on the first and second sections of the first partial layer.
8. The semiconductor component of claim 1 , wherein a distance between a maximum dopant concentration in the shielding regions and the first surface is greater than the second depth.
9. The semiconductor component of claim 1 , wherein the gate structures and the contact structures are formed in strip-like fashion with longitudinal axes parallel to a second horizontal direction, and wherein the second horizontal direction extends parallel to the first surface and orthogonally to the first horizontal direction.
10. A semiconductor component, comprising:
gate structures extending into a silicon carbide body from a first surface, the gate structures having a width along a first horizontal direction parallel to the first surface;
contact structures extending into the silicon carbide body from the first surface, the gate structures and the contact structures alternating along the first horizontal direction;
shielding regions which, in the silicon carbide body, adjoin a bottom of the contact structures but not a bottom of the gate structures and are spaced apart from the gate structures along the first horizontal direction;
source regions between the first surface and body regions,
wherein the body regions form pn junctions with the source regions,
wherein the body regions comprise main sections adjoining the gate structures and, between the main sections and the contact structures, contact sections adjoining the contact structures,
wherein the contact structures extend from the first surface to a first depth in the silicon carbide body,
wherein the width of the gate structures is less than the first depth,
wherein the gate structures extend from the first surface to a second depth in the silicon carbide body,
wherein the first depth is greater than the second depth,
wherein the gate structures comprise a gate dielectric and a gate electrode,
wherein the gate electrode comprises first sections of a metal structure that adjoin the gate dielectric,
wherein the metal structure comprises at least a first partial layer and a second partial layer,
wherein a first section of the first partial layer in the gate structures adjoins the gate dielectric and a second section of the first partial layer in the contact structures adjoins the silicon carbide body, and
wherein the second partial layer bears on the first and second sections of the first partial layer.
11. The semiconductor component of claim 10 , wherein the shielding regions adjoin the body regions.
12. The semiconductor component of claim 10 , wherein the shielding regions are formed symmetrically with respect to a center axis of the contact structures.
13. The semiconductor component of claim 10 , wherein the shielding regions extend along lower sections of sidewalls of the contact structures.
14. The semiconductor component of claim 10 , wherein a horizontal width of the shielding regions parallel to the first horizontal direction is greater than a horizontal width of the contact structures.
15. The semiconductor component of claim 10 , wherein the shielding regions vertically extend into the body regions.
16. The semiconductor component of claim 10 , wherein the shielding regions extend from the first surface into the silicon carbide substrate more deeply than the gate structures.
17. The semiconductor component of claim 10 , wherein the shielding regions form pn junctions with a drift structure.