Non-volatile memory device
According to an embodiment, a non-volatile memory device includes first electrodes stacked on an underlying layer, a second electrode provided on the first electrodes, a semiconductor layer extending in a first direction from the underlying layer to the second electrode, and a memory film provided between each of the first electrodes and the semiconductor layer. The semiconductor layer includes a first portion adjacent to the first electrodes and a second portion adjacent to the second electrode. The second portion has a thickness thinner than a thickness of the first portion in a second direction perpendicular to the first direction.
1. A nonvolatile semiconductor memory device comprising:
an underlying insulating layer provided above a substrate;
a conductive layer provided above the underlying insulating layer;
memory cells including a plurality of first electrodes alternately stacked with a plurality of first insulating layers therebetween in a first direction above the conductive layer, a memory channel portion extending in the first direction through the first electrodes and having a ring shape in a cross section crossing the first direction, and a memory film provided between at least one of the first electrodes and the memory channel portion;
a wiring provided above the memory cells;
a first select transistor provided between the memory cells and the wiring in the first direction, the first select transistor including a second electrode, an upper gate channel portion extending in the first direction through the second electrode, and an upper insulator core portion provided inside the upper gate channel portion, one end of the upper gate channel portion being electrically connected to the memory channel portion and the other end of the upper gate channel portion being electrically connected to the wiring; and
a second select transistor provided between the memory cells and the conductive layer in the first direction, the second select transistor including a third electrode, a lower gate channel portion extending in the first direction through the third electrode, and a lower insulator core portion provided inside the lower gate channel portion, one end of the lower gate channel portion being electrically connected to the memory channel portion and the other end of the lower gate channel portion being electrically connected to the conductive layer, wherein
the upper insulator core portion continuously extends in the first direction through the second electrode and at least an uppermost electrode of the first electrodes inside the upper gate channel portion and the memory channel portion having the ring shape, and
a second insulating layer is provided on the third electrode and a lowermost electrode of the first electrodes is provided on the second insulating layer, a thickness of an uppermost first insulating layer of the first insulating layers being thinner than a thickness of the second insulating layer in the first direction, the uppermost first insulating layer being adjacent to the uppermost electrode in the first direction below the uppermost electrode.
2. The device according to claim 1 , wherein the upper insulator core portion continuously extends in the first direction through the second electrode and at least three layers of the first electrodes inside the upper gate channel portion and the memory channel portion having the ring shape.
3. The device according to claim 1 , wherein a thickness of the upper gate channel portion in a second direction orthogonal to the first direction is thinner than a thickness of the memory channel portion in the second direction.
4. The device according to claim 1 , wherein a thickness of the second electrode in the first direction is thicker than respective thicknesses of the first electrodes in the first direction.
5. The device according to claim 1 , wherein an upper surface of the second electrode is positioned at a level under an upper end of the upper insulator core portion in the first direction.
6. The device according to claim 1 , wherein an upper end of the upper insulator core portion is positioned at a level under an upper end of the upper gate channel portion in the first direction.
7. The device according to claim 1 , wherein the second select transistor further includes a lower insulator core portion provided inside the lower gate channel portion.
8. A nonvolatile semiconductor memory device comprising:
an underlying insulating layer provided above a substrate;
a conductive layer provided above the underlying insulating layer;
memory cells including a plurality of first electrodes alternately stacked with a plurality of first insulating layers therebetween in a first direction above the conductive layer, a memory channel portion extending in the first direction through the first electrodes and having a ring shape in a cross section crossing the first direction, and a memory film provided between at least one of the first electrodes and the memory channel portion;
a wiring provided above the memory cells;
a first select transistor provided between the memory cells and the wiring in the first direction, the first select transistor including a second electrode, an upper gate channel portion extending in the first direction through the second electrode, and an upper insulator core portion provided inside the upper gate channel portion, one end of the upper gate channel portion being electrically connected to the memory channel portion and the other end of the upper gate channel portion being electrically connected to the wiring; and
a second select transistor provided between the memory cells and the conductive layer in the first direction, the second select transistor including a third electrode, a lower gate channel portion extending in the first direction through the third electrode, and a lower insulator core portion provided inside the lower gate channel portion, one end of the lower gate channel portion being electrically connected to the memory channel portion and the other end of the lower gate channel portion being electrically connected to the conductive layer, wherein
the lower insulator core portion continuously extends in the first direction through the third electrode and at least a lowermost electrode of the first electrodes inside the lower gate channel portion and the memory channel portion having the ring shape, and
a second insulating layer is provided on the third electrode and the lowermost electrode of the first electrodes is provided on the second insulating layer, a thickness of a lowermost first insulating layer of the first insulating layers being thinner than a thickness of the second insulating layer in the first direction, the lowermost first insulating layer being adjacent to the lowermost electrode in the first direction above the lowermost electrode.
9. The device according to claim 8 , wherein a part of the upper gate channel portion extends between the lower insulator core portion and the upper insulator core portion.
10. The device according to claim 8 , wherein a thickness of the upper gate channel portion in a second direction orthogonal to the first direction is thinner than a thickness of the memory channel portion in the second direction.
11. The device according to claim 8 , wherein the first select transistor further includes a gate insulating film provided between the second electrode and the upper gate channel portion, the gate insulating film being different in material from the memory film.
12. The device according to claim 8 , wherein a thickness of the second electrode in the first direction is thicker than respective thicknesses of the first electrodes in the first direction.
13. The device according to claim 8 , wherein an upper surface of the second electrode is positioned at a level under an upper end of the upper insulator core portion in the first direction.
14. The device according to claim 8 , wherein an upper end of the upper insulator core portion is positioned at a level under an upper end of the upper gate channel portion in the first direction.
15. A nonvolatile semiconductor memory device comprising:
an underlying insulating layer provided above a substrate;
a conductive layer provided above the underlying insulating layer;
memory cells including a plurality of first electrodes alternately stacked with a plurality of first insulating layers therebetween in a first direction above the conductive layer, a memory channel portion extending in the first direction through the first electrodes and having a ring shape in a cross section crossing the first direction, and a memory film provided between at least one of the first electrodes and the memory channel portion;
a wiring provided above the memory cells;
a first select transistor provided between the memory cells and the wiring in the first direction, the first select transistor including a second electrode, an upper gate channel portion extending in the first direction through the second electrode, and an upper insulator core portion provided inside the upper gate channel portion, one end of the upper gate channel portion being electrically connected to the memory channel portion and the other end of the upper gate channel portion being electrically connected to the wiring; and
a second select transistor provided between the memory cells and the conductive layer in the first direction, the second select transistor including a third electrode, a lower gate channel portion extending in the first direction through the third electrode, and a lower insulator core portion provided inside the lower gate channel portion, one end of the lower gate channel portion being electrically connected to the memory channel portion and the other end of the lower gate channel portion being electrically connected to the conductive layer, wherein
the upper insulator core portion continuously extends in the first direction through the second electrode and at least an uppermost electrode of the first electrodes inside the upper gate channel portion and the memory channel portion having the ring shape,
the lower insulator core portion continuously extends in the first direction through the third electrode and at least a lowermost electrode of the first electrodes inside the lower gate channel portion and the memory channel portion having the ring shape, and
a second insulating layer is provided on the third electrode and the lowermost electrode of the first electrodes is provided on the second insulating layer, a thickness of an uppermost first insulating layer of the first insulating layers and a thickness of a lowermost first insulating layer of the first insulating layers being thinner than a thickness of the second insulating layer in the first direction, the uppermost first insulating layer being adjacent to the uppermost electrode in the first direction below the uppermost electrode and the lowermost first insulating layer being adjacent to the lowermost electrode in the first direction above the lowermost electrode.
16. The device according to claim 15 , wherein the upper insulator core portion continuously extends in the first direction through the second electrode and at least three layers of the first electrodes inside the upper gate channel portion and the memory channel portion having the ring shape.
17. The device according to claim 15 , wherein a thickness of the upper gate channel portion in a second direction orthogonal to the first direction is thinner than a thickness of the memory channel portion in the second direction.
18. The device according to claim 15 , wherein a thickness of the second electrode in the first direction is thicker than respective thicknesses of the first electrodes in the first direction.
19. The device according to claim 15 , wherein an upper surface of the second electrode is positioned at a level under an upper end of the upper insulator core portion in the first direction.
20. The device according to claim 15 , wherein an upper end of the upper insulator core portion is positioned at a level under an upper end of the upper gate channel portion in the first direction.