Transistorless memory cell
In some embodiments, the present disclosure relates to an integrated chip. The integrated chip includes an operative memory device. A regulating access apparatus is coupled to the operative memory device. The regulating access apparatus includes one or more regulating MTJ devices respectively having a regulating free layer, a regulating dielectric barrier layer, and a regulating pinned layer separated from the regulating free layer by the regulating dielectric barrier layer. The regulating pinned layer continuously extends between opposing outermost sidewalls of the regulating dielectric barrier layer.
1. An integrated chip, comprising:
an operative memory device; and
a regulating access apparatus coupled to the operative memory device, wherein the regulating access apparatus comprises a first regulating MTJ device having a first width and a second regulating MTJ device having a second width that is different than the first width, the first regulating MTJ device being different than the second regulating MTJ device.
2. The integrated chip of claim 1 , wherein an outermost sidewall of the first regulating MTJ device is laterally separated from an outermost sidewall of the second regulating MTJ device by an inter-level dielectric (ILD) structure disposed on a substrate.
3. The integrated chip of claim 2 , further comprising:
an interconnect wire disposed within the ILD structure, wherein the interconnect wire continuously extends from directly above or below the first regulating MTJ device to directly above or below the second regulating MTJ device.
4. The integrated chip of claim 3 , further comprising:
a first interconnect via disposed vertically between the interconnect wire and the first regulating MTJ device; and
a second interconnect via disposed vertically between the interconnect wire and the second regulating MTJ device.
5. The integrated chip of claim 3 , wherein the interconnect wire continuously extends to directly below the operative memory device.
6. The integrated chip of claim 2 , wherein the first regulating MTJ device, the second regulating MTJ device, and the operative memory device are substantially equal distances over the substrate.
7. The integrated chip of claim 1 , wherein the first regulating MTJ device and the second regulating MTJ device respectively comprise a regulating free layer, a regulating dielectric barrier layer on the regulating free layer, and a regulating pinned layer separated from the regulating free layer by the regulating dielectric barrier layer.
8. The integrated chip of claim 1 , wherein the operative memory device comprises an operative MTJ device having a third width that is different than the first width and the second width.
9. An integrated chip, comprising:
an operative memory device;
a regulating access apparatus coupled to the operative memory device and comprising regulating MTJ devices respectively including a regulating free layer, a regulating dielectric barrier layer, and a regulating pinned layer separated from the regulating free layer by the regulating dielectric barrier layer, wherein the regulating pinned layer continuously extends between opposing outermost sidewalls of the regulating dielectric barrier layer; and
wherein the regulating access apparatus comprises a first regulating MTJ device having a first width and a second regulating MTJ device having a second width that is different than the first width, the first regulating MTJ device being different than the second regulating MTJ device.
10. The integrated chip of claim 9 , further comprising:
an interconnect disposed within an inter-level dielectric (ILD) layer and contacting the first regulating MTJ device, wherein the regulating pinned layer of the first regulating MTJ device laterally extends past an outermost sidewall of the interconnect.
11. The integrated chip of claim 9 , wherein the regulating pinned layer of the first regulating MTJ device covers an entirety of a surface of the regulating dielectric barrier layer that faces away from the regulating free layer.
12. The integrated chip of claim 9 , wherein a surface of the regulating free layer of the first regulating MTJ device that faces towards the regulating pinned layer has a width that is substantially equal to a width of a surface of the regulating dielectric barrier layer that faces away from the regulating pinned layer.
13. The integrated chip of claim 9 , further comprising:
an inter-level dielectric (ILD) structure disposed over a semiconductor substrate and surrounding the regulating access apparatus, wherein the first regulating MTJ device is completely separated from the second regulating MTJ device by the ILD structure.
14. The integrated chip of claim 13 , further comprising:
an interconnect contacting a center of a bottommost surface of the regulating pinned layer of the first regulating MTJ device.
15. An integrated chip, comprising:
an operative memory device;
a first regulating MTJ device comprising a first regulating free layer coupled to the operative memory device, a first regulating dielectric barrier layer on the first regulating free layer, and a first regulating pinned layer coupled to a first interconnect and separated from the first regulating free layer by the first regulating dielectric barrier layer;
a second regulating MTJ device comprising a second regulating free layer coupled to the operative memory device, a second regulating dielectric barrier layer on the second regulating free layer, and a second regulating pinned layer coupled to a second interconnect and separated from the second regulating free layer by the second regulating dielectric barrier layer; and
wherein the first regulating MTJ device has a first width and the second regulating MTJ device has a second width that is different than the first width.
16. The integrated chip of claim 15 , wherein the first regulating free layer is laterally separated from the second regulating free layer by an inter-level dielectric (ILD) layer disposed over a semiconductor substrate.
17. The integrated chip of claim 15 , wherein the first regulating MTJ device is configured to provide a first switching current and the second regulating MTJ device is configured to provide a second switching current that is different than the first switching current.
18. The integrated chip of claim 15 , wherein the operative memory device has a width that is different than the first width of the first regulating MTJ device and the second width of the second regulating MTJ device.
19. The integrated chip of claim 15 , wherein the first regulating MTJ device has a topmost surface and a bottommost surface with substantially equal widths.
20. The integrated chip of claim 15 , wherein the first regulating MTJ device and the second regulating MTJ device are configured to selectively provide access to the operative memory device by controlling a current that is provided to the operative memory device.