High-K capacitor dielectric having a metal oxide area comprising boron, electrical device and semiconductor apparatus including the same
Provided is a semiconductor device including a lower electrode, an upper electrode isolated from direct contact with the lower electrode, and a dielectric layer between the lower electrode and the upper electrode, the dielectric layer comprising a first metal oxide area, a second metal oxide area, and a third metal oxide area. The third metal oxide area is between the first metal oxide area and the second metal oxide area, and includes boron and one or more metal elements selected from aluminum (Al), magnesium (Mg), silicon (Si), or beryllium (Be). In the third metal oxide area, a content of boron (B) is less than or equal to a content of the metal elements of Al, Mg, Si, and/or Be.
1. An electrical device comprising:
a lower electrode;
an upper electrode isolated from direct contact with the lower electrode; and
a dielectric layer between the lower electrode and the upper electrode,
wherein the dielectric layer comprises
a first metal oxide area,
a second metal oxide area, and
a third metal oxide area between the first metal oxide area and the second metal oxide area,
wherein the third metal oxide area comprises boron (B) and at least one of Al, Mg, Si, or Be, such that a concentration of the boron in the dielectric layer, as measured from the lower electrode, at a position between 40% to 90% a thickness of the dielectric layer is greater than the concentration of the boron in the dielectric layer lower than the position between 40% to 90% the thickness of the dielectric layer.
2. The electrical device of claim 1 , wherein the first metal oxide area, the third metal oxide area, and the second metal oxide area are sequentially arranged in a thickness direction of the dielectric layer.
3. The electrical device of claim 1 , wherein each of the first metal oxide area and the second metal oxide area has a dielectric constant of 20 or more and 70 or less.
4. The electrical device of claim 1 , wherein each of the first metal oxide area and the second metal oxide area independently comprise an oxide including at least one of Ca, Sr, Ba, Sc, Y, La, Ti, Hf, Zr, Nb, Ta, Ce, Pr, Nd, Gd, Dy, Yb, Pb, Zn, or Lu.
5. The electrical device of claim 1 , wherein a boron content in the third metal oxide area is greater than a boron content in each of the first and second metal oxide areas.
6. The electrical device of claim 1 , wherein a boron content in the third metal oxide area is less than or equal to a content of metal elements comprising the third metal oxide area.
7. The electrical device of claim 1 , wherein
the first metal oxide area comprises a first metal oxide layer,
the second metal oxide area comprises a second metal oxide layer,
the third metal oxide area includes a third metal oxide layer, and
the concentration of the boron included in the dielectric layer changes across an interface between third metal oxide layer and the first metal oxide layer.
8. The electrical device of claim 1 , wherein
the third metal oxide area comprises a metal oxide represented by AB a C 1−a O,
wherein A is at least one of Ca, Sr, Ba, Sc, Y, La, Ti, Hf, Zr, Nb, Ta, Ce, Pr, Nd, Gd, Dy, Yb, Pb, Zn, or Lu,
B is boron (B),
C is at least one of Al, Mg, Si, and Be, and
a is greater than 0.00 and 0.50 or less.
9. The electrical device of claim 1 , wherein
the first metal oxide area is adjacent to the lower electrode, and
a thickness of the first metal oxide area is 40% or more of a total thickness of the dielectric layer.
10. The electrical device of claim 1 , wherein a ratio of a thickness of the third metal oxide area, with respect to a thickness of the first metal oxide area, is 0.3 or more and less than 1.0.
11. The electrical device of claim 1 , wherein the dielectric layer comprises a fourth metal oxide area between the upper electrode and the second metal oxide area, the fourth metal oxide area comprising at least one of Al, Mg, Si, or Be.
12. The electrical device of claim 11 , wherein a boron content in the fourth metal oxide area is less than a content of boron in the third metal oxide area.
13. The electrical device of claim 1 , wherein the dielectric layer is configured such that, when a voltage of 1.0 V is applied, a leakage current value is 1.0×10 −4 A/cm 2 or less.
14. The electrical device of claim 1 , wherein at least one of the upper electrode and the lower electrode comprises a metal nitride represented by MM′N,
wherein M is a metal element, M′ is a doping element, and N is nitrogen.
15. The electrical device of claim 1 , further comprising:
an interface layer between the dielectric layer and at least one of the upper electrode and the lower electrode.
16. A semiconductor apparatus, the semiconductor apparatus comprising:
the electrical device according to claim 1 ; and
a field-effect transistor electrically connected to the electrical device.
17. The semiconductor apparatus of claim 16 , wherein the field-effect transistor comprises:
a source and a drain;
a semiconductor channel connecting the source and the drain;
a gate dielectric layer on the semiconductor channel; and
a gate electrode on the gate dielectric layer.
18. A dynamic random access memory (DRAM) comprising:
a plurality of DRAM cells, each of the DRAM cells including the electrical device according to claim 1 .
19. A capacitor comprising:
a lower electrode;
an upper electrode spaced apart from the lower electrode; and
a dielectric layer between the lower electrode and the upper electrode such that the dielectric layer electrically insulates the lower electrode from the upper electrode,
wherein the dielectric layer includes a metal oxide, Boron (B) and at least one of Al, Mg, Si, and Be,
wherein, at a position between 40% to 90%, a concentration of the boron in the dielectric layer changes such that the concentration above the position is greater than the concentration below the position.