Semiconductor structure and method for manufacturing same
A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a substrate, a gate structure being provided on a surface of the substrate, and a source region and a drain region being provided in the substrate at two sides of the gate structure, respectively; and a contact located on the substrate, the contact including a first contact located on the substrate and a second contact located on a side of the first contact away from the substrate, in which an area of a bottom surface of the first contact is greater than an area of a top surface of the second contact.
1. A method for manufacturing a semiconductor structure, comprising:
providing a substrate, a gate structure being provided on a surface of the substrate, and a source region and a drain region being provided in the substrate at two sides of the gate structure, respectively; and
forming a contact on the substrate, the contact comprising a first contact located on the substrate and a second contact located on a side of the first contact away from the substrate,
wherein an area of a bottom surface of the first contact is greater than an area of a top surface of the second contact;
wherein forming the contact on the substrate comprises:
forming an interlayer dielectric layer and a mask layer on the substrate in sequence;
etching the interlayer dielectric layer and the mask layer to form a through hole;
filling the through hole to form a contact pre-layer;
forming a photoresist layer on the contact pre-layer, and performing exposure and development on the photoresist layer to transfer a target pattern of a photomask to the photoresist layer and to form a patterned photoresist layer; and
based on the patterned photoresist layer, partially etching the contact pre-layer to form the first contact and the second contact.
2. The method according to claim 1 , further comprising:
forming silicide layers on the substrate of the source region and the drain region, wherein a side of each of the silicide layers away from the substrate is disposed with the contact, before forming the contact.
3. The method according to claim 1 , wherein,
a side of the gate structure away from the substrate is disposed with the contact.
4. The method according to claim 1 , wherein,
the area of the bottom surface of the first contact is 2-4 times the area of the top surface of the second contact.
5. The method according to claim 1 , wherein,
a height of the first contact is 2-4 times that of the second contact along a direction perpendicular to a plane of the substrate.
6. The method according to claim 1 , wherein,
within a section parallel to a plane of the substrate, a sectional area of the first contact is a first sectional area, and a sectional area of the second contact is a second sectional area; and
along a direction perpendicular to the plane of the substrate, the first sectional area and the second sectional area remain constant, respectively.
7. The method according to claim 1 , wherein,
within a section parallel to a plane of the substrate, a sectional area of the first contact is a first sectional area, and a sectional area of the second contact is a second sectional area; and
along a direction perpendicular to the plane of the substrate and gradually away from the substrate, the first sectional area and the second sectional area gradually decrease, respectively.