US 2463073A
· Webb
· 1949
[cited by applicant]
US 4103325A
· Hyman et al.
· 1978
[cited by applicant]
US 4873497A
· Kielmeyer
· 1989
[cited by applicant]
US 5362972A
· Yazawa et al.
· 1994
[cited by applicant]
US 5976957A
· Westwater et al.
· 1999
[cited by applicant]
US 6306734B1
· Givargizov
· 2001
[cited by applicant]
US 6734451B2
· Eriguchi et al.
· 2004
[cited by applicant]
US 7250359B2
· Fitzgerald
· 2007
[cited by applicant]
US 7432522B2
· Samuelson et al.
· 2008
[cited by applicant]
US 7829362B2
· Fukutani et al.
· 2010
[cited by applicant]
US 8094223B1
· De Wit et al.
· 2012
[cited by applicant]
US 8324660B2
· Lochtefeld et al.
· 2012
[cited by applicant]
US 8344242B2
· Fiorenza et al.
· 2013
[cited by applicant]
US 8835905B2
· Wober et al.
· 2014
[cited by applicant]
US 9000353B2
· Seo et al.
· 2015
[cited by applicant]
US 9275857B1
· Hersee
· 2016
[cited by applicant]
US 9379204B2
· Fogel et al.
· 2016
[cited by applicant]
US 9406709B2
· Seo et al.
· 2016
[cited by applicant]
US 9764950B2
· Colinge et al.
· 2017
[cited by applicant]
US 9887637B1
· Shah et al.
· 2018
[cited by applicant]
US 9979326B1
· Zanelato
· 2018
[cited by examiner]
US 9984872B2
· Park et al.
· 2018
[cited by applicant]
US 20030022395A1
· Olds
· 2003
[cited by applicant]
US 20050064291A1
· Sato et al.
· 2005
[cited by applicant]
US 20070108435A1
· Harmon
· 2007
[cited by applicant]
US 20070277866A1
· Sander et al.
· 2007
[cited by applicant]
US 20080153000A1
· Salot et al.
· 2008
[cited by applicant]
US 20080171424A1
· Li
· 2008
[cited by applicant]
US 20100314617A1
· Ito
· 2010
[cited by applicant]
US 20110020704A1
· Fukuchi
· 2011
[cited by applicant]
US 20110036396A1
· Jayaraman
· 2011
[cited by applicant]
US 20110140072A1
· Varangis
· 2011
[cited by applicant]
US 20130187627A1
· Imada et al.
· 2013
[cited by applicant]
US 20140008609A1
· Chiu
· 2014
[cited by applicant]
US 20140231870A1
· Hoke
· 2014
[cited by applicant]
US 20150118572A1
· Lund et al.
· 2015
[cited by applicant]
US 20150155275A1
· Bahramian et al.
· 2015
[cited by applicant]
US 20150311072A1
· Aagesen
· 2015
[cited by applicant]
US 20180240797A1
· Yokoyama et al.
· 2018
[cited by applicant]
US 20190393104A1
· Ando
· 2019
[cited by applicant]
US 20200203556A1
· Feuillet et al.
· 2020
[cited by applicant]
US 20200381538A1
· Shih et al.
· 2020
[cited by applicant]
US 20240186365A1
· Olsson
· 2024
[cited by applicant]
US 20240356456A1
· Olsson
· 2024
[cited by applicant]
US 20240363693A1
· Olsson
· 2024
[cited by applicant]
US 20240380369A1
· Olsson
· 2024
[cited by applicant]
US 20250040175A1
· Olsson
· 2025
[cited by applicant]
US 20250063732A1
· Olsson
· 2025
[cited by applicant]
US 20250081501A1
· Olsson
· 2025
[cited by applicant]
CN 1599099
· 2005
[cited by applicant]
CN 101621292
· 2012
[cited by applicant]
CN 101765934
· 2013
[cited by applicant]
CN 103477418
· 2013
[cited by applicant]
CN 105659383
· 2016
[cited by applicant]
CN 105914232
· 2016
[cited by applicant]
CN 105990443
· 2016
[cited by applicant]
CN 106549050
· 2017
[cited by applicant]
CN 110324568
· 2019
[cited by applicant]
CN 110336028
· 2021
[cited by applicant]
CN 112490243
· 2021
[cited by applicant]
EP 1959530
· 2008
[cited by applicant]
EP 2075745
· 2009
[cited by applicant]
EP 2571065
· 2013
[cited by applicant]
EP 2816729
· 2014
[cited by applicant]
EP 284700
· 2015
[cited by applicant]
EP 2838125
· 2015
[cited by applicant]
EP 2955763
· 2015
[cited by applicant]
GB 2520687
· 2015
[cited by applicant]
JP H09246471
· 1997
[cited by applicant]
JP 2000101152
· 2000
[cited by applicant]
JP 2003101069
· 2003
[cited by applicant]
JP 2005268555
· 2005
[cited by applicant]
JP 2008057383
· 2008
[cited by applicant]
JP 2009152189
· 2009
[cited by applicant]
JP 2010232423
· 2010
[cited by applicant]
JP 2011529639
· 2011
[cited by applicant]
JP 2012018919
· 2012
[cited by applicant]
JP 2014146744
· 2014
[cited by applicant]
JP 2014217252
· 2014
[cited by applicant]
JP 2015198549
· 2015
[cited by applicant]
JP 2016135000
· 2016
[cited by applicant]
JP 2018050419
· 2018
[cited by applicant]
JP 2019092292
· 2019
[cited by applicant]
JP 2019114581
· 2019
[cited by applicant]
JP 2020061510
· 2020
[cited by applicant]
KR 1020130030193
· 2013
[cited by applicant]
TW 201036347
· 2010
[cited by applicant]
WO WO9508452
· 1995
[cited by applicant]
WO WO201001412
· 2010
[cited by applicant]
WO WO2010100599
· 2010
[cited by applicant]
WO WO2012077513
· 2012
[cited by applicant]
WO WO2012105901
· 2012
[cited by applicant]
WO WO2013049817
· 2013
[cited by applicant]
WO WO2017038403
· 2017
[cited by applicant]
WO WO2017111844
· 2017
[cited by applicant]
WO WO2017213644
· 2017
[cited by applicant]
WO WO2019144966
· 2019
[cited by applicant]
WO WO2019202258
· 2019
[cited by applicant]
WO WO2020222149
· 2020
[cited by applicant]
WO WO2021021415
· 2021
[cited by applicant]
International Search Report and Written Opinion of PCT/EP2021/061831, dated Jun. 7, 2021 in 13 pages.
[cited by applicant]
Alamo et al., III-V CMOS: the key to sub-10 nm electronics?, Microsystems Technology Laboratories, MIT, 2011 MRS Spring Meeting and Exhibition Symposium P: Interface Engineering for Post-CMOS Emerging Channel Materials.
[cited by applicant]
Asghar Asgari, “Negative Differential Capacitance of AlGaN/GaN Heterostructure in Presence of InN Quantum Dots”, SPIE, PO Box 10 Bellingham WA 98227-0010 USA, Jan. 1, 2008.
[cited by applicant]
Anonymous, “High-electron-mobility transistor—Wikipedia”, Mar. 6, 2020 (Mar. 6, 2020), XP055808423, Retrieved from the Internet: URL:https://en.wikipedia.org/w/index.php?title=High-electron-mobility transistor&old id=94…
[cited by applicant]
Anonymous, “Phase-shift oscillator Wikipedia” Apr. 7, 2019 (Apr. 7, 2019), XP055733459, Retrieved from the Internet: URL:https://en.wikipedia.org/w/index.php?title=Phase-shift-oscillator&oldid=89138949 5, retrieved on S…
[cited by applicant]
Cai et al, Monolithically Integrated Enhancement-and Depletion-Mode AlGaN/GaN HEMT for gaN Digital Integrated Circuits, vol. 53, No. 9, Sep. 1, 2006 (Sep. 1, 2006), pp. 2223-2230.
[cited by applicant]
Chebrolu et al., “Recent progress in quantum dot sensitized solar cells: an inclusive review of photoanode, sensitizer, electrolyte, and the counter electrode”, Journal of Materials Chemistry C 2019, pp. 4911-4933.
[cited by applicant]
Dahal et al., “Realizing InGaN monolithic solar-photoelctrochemical cells for artificial photosynthesis”, Appl. Phys, Lett. 104, 143901, (2014); Published Onlines: Apr. 9, 2014.
[cited by applicant]
Enthaler et al, “Carbon dioxide and formic acid-the couple for environmental-friendly hydrogen storage?”, Energy & Enviormental Science, 2010 pp. 1207-1217.
[cited by applicant]
Faunce et al., “Nanotechnology, Plasma, Hydrogen from Artificial Photosynthesis, and Fuel Cells: Powering the Developing World to the Sustainocene”, Nanotechnology Toward the Sustoinocene, Chapter 11, pp. 241-257.
[cited by applicant]
Fujii et al., “Photoelectrochemical Properties of Ingan For H2 Generation From Aqueous Water”, Japanese Journal of Applied Physics, Japan Society Of Applied Physics, JP, vol. 44, No. 10, Oct. 11, 2005 (Oct. 11, 2005), p…
[cited by applicant]
Mukhopadhyay, P. “Comparative DC Characteristic Analysis of AlGaN/GaN HEMTs Grown on Si(111) And Sapphire Substrates by MBE” Jour. Of Elec. Mat. vol. 43, No. 4, Feb. 14, 2014 pp. 1263-1270 (Year: 2014).
[cited by applicant]
Nainani, “High-Performance III-V Pmosfet”, May 2011, in 131 pages.
[cited by applicant]
Ramakrishna et al. “Nitrogen doped CNTs supported Palladium electrocatalyst for hydrogen evolution reaction in PEM water electrolyser”, International Journal of Hydrogen Energy, 2016 pp. 20447-20454.
[cited by applicant]
Shibata, D. “1. 7 kV/ 1.0 mQcm2 Normally-off Vertical GaN Transistor on GaN substrate with Regrown p-GaN/AlGaN/GaN SemipolarGate Structure” IEEE Int. Elec. Dev. Meet. IEDM 2016, Feb. 2, 2017 pp. 248-251 (Year: 2016).
[cited by applicant]
Sritoma et al., IIA Novel GaN-Hemt based Inverter and Cascade Amplifier 11 , 2018 IEEE Electron Devices Kolkata Conference (EDKCON), IEEE, Nov. 24, 2018 (Nov. 24, 2018), pp. 465-469.
[cited by applicant]
Sundaram et al, “Single-crystal nanopyramidal BGaN by nanoselective area growth on AlN/Si(111) and GaN templates”., Nanotechnology, vol. 27 (2016) 7 pages.
[cited by applicant]
Tavares et al., “Implementation of a high frequency PWM signal in FPGA for GaN power devices switching”, 2017 Brazilian Power Electronics Conference (COBEP), IEEE, Nov. 19, 2017 (Nov. 19, 2017), pp. 1-7.
[cited by applicant]
Wang et al, Germanium-Assisted Direct Growth of Graphene on Arbitrart Dielectric Substrates for Heating Device, Nano Micro Small, vol. 13, No. 28 Jul. 26, 2017.
[cited by applicant]
Doring et al., “Technology of GaN-Based Large Area CAVETs With Co-Integrated HEMTs,” IEEE Transactions on Electron Devices, vol. 68, No. 11, Nov. 2021, pp. 5547-5552.
[cited by applicant]
Eickhoff et al., “Piezoresistivity of Alx Ga1-xN layers and Alx Ga10xN/GaN heterostructures,” Journal of Applied Physics, American Institute of Physics, vol. 90, No. 7, Oct. 1, 2001, pp. 3383-3386.
[cited by applicant]
Gust et al., “Solar Fukes via Artificial Photosynthesis”, Department of Chemistry and Biochemestry and Center for Bioenergy and Photosynthesis, Arizona State University, Jul. 17, 2009, in 9 pages.
[cited by applicant]
Iqbal et al. “Reactive Sputtering of Aluminum Nitride Thin Files for Piezoeletric Applications: A Review”, Sensors, vol. 18, No. 6, Jun. 2018 in 21 pages.
[cited by applicant]
Jones et al., “Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges,” IEEE, vol. 4, No. 3, Sep. 2016, pp. 707-719.
[cited by applicant]
Kampl et al., “2500 W full-bridge totem-pole power factor correction using CoolGaN,” Nov. 5, 2018, pp. 1-46.
[cited by applicant]
Kozodoy et al. “Polarization-enhanced Mg doping of AlGaN/GaN superlattices,” Applied Physics Letters, vol. 75, No. 16, Oct. 18, 1999, pp. 2444-2446.
[cited by applicant]
Kumar et al. “Quantum dot activated indium gallium nitride on silicon as photoanode for solar hydrogen generation”, Communcations Chemestry, in 7 pages.
[cited by applicant]
Lan et al., “Efficienty improvement of the Light-emitting diodes by the lateral overgrowth GaN on an AlN nanorod template,” 14th International Conference on Solid State Lighting and LED-based Illumination Systems 957100…
[cited by applicant]
Lin et al., “Physical and electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with rare earth Er2O3 as a gate dielectric”, Thin Solid Films, vol. 544, Oct. 2013 (Oct. 201…
[cited by applicant]
Lu et al., “Paralleling GaN E-HEMTs in 10KW-100KW systems,” 2017 IEEE Applied Power Electronics Conference and Exposition, Mar. 26, 2017, pp. 3049-3056.
[cited by applicant]
Naveed ul Hassan Alvi et al., “InN/InGaN Quantum Dot Photoelectrode: Efficient Hydrogen Generation By Water Splitting At Zero Voltage”, Nano Energy, vol. 13, Mar. 6, 2015 (Mar. 6, 2015), pp. 291-297.
[cited by applicant]
Park, J. “Comparison of AlGaN/GaN High Electron Mobility Transistor with AlN or GaN as a cap layer” Conference paper proceedings on Research Gate available online at address recited in the Office Action as of Jul. 14, 2…
[cited by applicant]
Raj et al. “Demonstration of a GaN/AlGaN Superlattice-Based p-Channel FinFET With High ON-current,” IEEE Electron Device Letters, vol. 41, No. 2, Dec. 31, 2019, pp. 220-223.
[cited by applicant]
Seo et al., “i-based nonalloyed Ohmic contacts for Al0.15Ga0.85N/GaN high electron mobility transistors using regrown n+-GaN by plasma assisted molecular beam epitaxy,” Applied Physics Letters, vol. 93, Issue 10, Sep. 8…
[cited by applicant]
Tripathy et al., “AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameterSi(111)”, Applied Physics Letters, 101, 082110 (2012) https://doi.org/10.1063/1.4746751 Submitted: Feb. 7, 2012 , Accepted: Aug…
[cited by applicant]