Semiconductor device
A semiconductor device, including, a drift region of a first conductivity type provided on a semiconductor substrate; a field stop region of a first conductivity type provided below the drift region and having one or more peaks; and a collector region of a second conductivity type provided below the field stop region, wherein when an integral concentration of the collector region is set to be x [cm −2 ], a depth of a first peak that is a shallowest from the back surface of the semiconductor substrate out of the one or more peaks is set to be y 1 [μm], line A 1 : y 1 =(−7.4699E−01)ln(x)+(2.7810E+01), and line B 1 : y 1 =(−4.7772E−01)ln(x)+(1.7960E+01), a depth of the first peak and the integral concentration are within a range between a line A 1 and a line B 1 , is provided.
1. A semiconductor device comprising:
a drift region of a first conductivity type provided on a semiconductor substrate;
a field stop region of a first conductivity type provided below the drift region and having one or more peaks of a doping concentration in a depth direction; and
a collector region of a second conductivity type provided below the field stop region,
wherein when an integral in the depth direction of a dopant concentration of the collector region is set to be x [cm −2 ], a depth of a first peak of the one or more peaks of the doping concentration of the field stop region that is a shallowest from a back surface of the semiconductor substrate is set to be y 1 [μm],
line A 1: y 1[μm]=(−7.4699E-01)ln( x [cm −2 ])+(2.7810E+01), and
line B 1: y 1[μm]=(−4.7772E-01)ln( x [cm −2 ])+(1.7960E+01),
the depth of the first peak [μm] and the integral in the depth direction of the dopant concentration [cm −2 ] of the collector region are within a range between the line A 1 [μm/cm −2 ] and the line B 1 [μm/cm −2 ], and
the collector region includes a peak of the dopant concentration in the depth direction that is higher than a doping concentration of the first peak in the field stop region.
2. The semiconductor device according to claim 1 , wherein
the integral of concentration of the collector region is 8.00E15 cm −2 or less.
3. The semiconductor device according to claim 1 , wherein
the integral of concentration of the collector region is 3.00E14 cm −2 or less.
4. The semiconductor device according to claim 1 , wherein
the integral of concentration of the collector region is 2.00E14 cm −2 or less.
5. The semiconductor device according to claim 1 , wherein
the integral of concentration of the collector region is 1.00E14 cm −2 or less.
6. The semiconductor device according to claim 1 , wherein
the integral of concentration of the collector region is 5.00E13 cm −2 or less.
7. The semiconductor device according to claim 1 , wherein
the integral of concentration of the collector region is 3.00E13 cm −2 or less.
8. The semiconductor device according to claim 1 , wherein
the integral of concentration of the collector region is 1.00E13 cm −2 or less.
9. The semiconductor device according to claim 1 , wherein
a depth of the first peak is 0.5 μm or more and 7.2 μm or less.
10. The semiconductor device according to claim 1 , wherein
a depth of the first peak is 2.0 μm or more and 7.2 μm or less.
11. The semiconductor device according to claim 1 , wherein
a depth of a second peak of the one or more peaks of the doping concentration that is a second shallowest from the back surface is set to be y 2 [μm],
line A 2: y 2[μm]=(−3.1095E+00)ln( x [cm −2 ])+(1.1416E+02), and
line B 2: y 2[μm]=(−1.9239E+00)ln( x [cm −2 ])+(7.1030E+01),
a depth of the second peak and the integral of concentration are within a range between the line A 2 and the line B 2 .
12. The semiconductor device according to claim 11 , wherein
a depth of the second peak is 3.5 μm or more and 28 μm or less.
13. The semiconductor device according to claim 1 , wherein
a dopant of the one or more peaks of the doping concentration is hydrogen.
14. The semiconductor device according to claim 1 , further comprising:
an active region provided on the semiconductor substrate; and
an outer peripheral region provided in an outer periphery of the active region in a top view of the semiconductor substrate.
15. The semiconductor device according to claim 1 , further comprising:
a base region of the second conductivity type provided above the drift region;
an emitter region of the first conductivity type provided above the base region and whose doping concentration is higher than that of the drift region;
a contact region of the second conductivity type provided above the base region and whose doping concentration is higher than that of the base region; and
a plurality of gate trench portions provided on the semiconductor substrate.
16. The semiconductor device according to claim 1 , wherein
a doping concentration in a boundary between the field stop region and the collector region is 1E16 cm −3 or less.
17. The semiconductor device according to claim 1 , wherein
a doping concentration in a boundary between the field stop region and the collector region is 5E15 cm−3 or less.
18. The semiconductor device according to claim 1 , wherein
a doping concentration in a boundary between the field stop region and the collector region is 2E15 cm −3 or less.
19. The semiconductor device according to claim 1 , wherein
a hydrogen chemical concentration in a boundary between the field stop region and the collector region is 1E18 cm −3 or less.
20. The semiconductor device according to claim 1 , wherein
a hydrogen chemical concentration in a boundary between the field stop region and the collector region is 1E17 cm −3 or less.
21. The semiconductor device according to claim 1 , wherein
a hydrogen chemical concentration in a boundary between the field stop region and the collector region is 1E15 cm −3 or more.
22. The semiconductor device according to claim 1 , wherein
a hydrogen chemical concentration in a boundary between the field stop region and the collector region is 1E16 cm −3 or more.
23. The semiconductor device according to claim 1 , wherein
a dopant of the first peak is phosphorous.
24. The semiconductor device according to claim 1 , wherein
a dopant of peaks of the doping concentration other than the first peak out of the one or more peaks is hydrogen.
25. The semiconductor device according to claim 1 , wherein
a front surface side region of the semiconductor substrate does not comprise a lifetime killer region.
26. A system comprising the semiconductor device according to claim 1 , wherein the semiconductor device is coupled to a circuit having
a stray inductance Ls set to be Xc [nH], and a collector current decrease rate dice/dt set to be Yc [A/μs], and
line C 1: Yc= 10000 Xc −1 ,
the stray inductance Ls and the collector current decrease rate dice/dt are within a range that is greater than the line C 1 .