Methods for etching a substrate using a hybrid wet atomic layer etching process
The present disclosure provides a hybrid atomic layer etching (ALE) process that combines a gas-phase surface modification step with a liquid-phase dissolution step for etching an exposed material on a substrate disposed within a process chamber. In the hybrid ALE process disclosed herein, a gas-phase reactant is used to modify an exposed surface of the material to create a modified surface layer, and one or more liquid-phase reactants are used to selectively dissolve the modified surface layer without dissolving the material underlying the modified surface layer. Once the modified surface layer is selectively dissolved, the substrate may be dried and the gas-phase surface modification and liquid-phase dissolution steps may be repeated for one or more ALE cycles until a desired amount of the material is etched.
1. A method of etching a substrate using a hybrid atomic layer etching (ALE) process, the method comprising:
receiving the substrate, the substrate having a material exposed; and
selectively etching the material by performing multiple cycles of the hybrid ALE process, wherein each cycle comprises:
a) performing a gas-phase surface modification step to chemically modify an exposed surface of the material and provide a self-limited modified surface layer on the material, wherein the gas-phase surface modification step includes exposing the substrate to a gas-phase oxidizing reactant to oxidize the exposed surface of the material and form a self-limited oxidized layer on the material via a self-limiting oxidation reaction, and wherein the self-limited oxidized layer is a passivation layer formed on the material; and
b) performing a liquid-phase dissolution step to selectively dissolve the self-limited oxidized layer of the material, wherein the liquid-phase dissolution step includes dispensing one or more liquid-phase reactants onto a surface of the substrate to dissolve the self-limited oxidized layer, wherein said dispensing the one or more liquid-phase reactants comprises dispensing a complexing agent dissolved in a first liquid solvent onto the surface of the substrate, and wherein the complexing agent binds to the self-limited oxidized layer to form a complex-bound modified surface layer on the material;
wherein the one or more liquid-phase reactants are dispensed onto the surface of the substrate while the substrate is exposed to the gas-phase oxidizing reactant;
wherein the one or more liquid-phase reactants partition the gas-phase surface modification step and the liquid-phase dissolution step by displacing the gas-phase oxidizing reactant from the surface of the substrate;
wherein the self-limited oxidized layer formed via the self-limiting oxidation reaction forms the passivation layer on the material that prevents further oxidation of the exposed surface of the material before the one or more liquid-phase reactants are dispensed onto the surface of the substrate; and
wherein steps a)-b) are repeated one or more times until a desired amount of the material is removed from the substrate.
2. The method of claim 1 , wherein the material includes a transition metal.
3. The method of claim 1 , wherein said dispensing the one or more liquid-phase reactants comprises dispensing a second liquid solvent onto the surface of the substrate to dissolve the complex-bound modified surface layer and remove the self-limited oxidized layer.
4. The method of claim 3 , wherein the first liquid solvent and the second liquid solvent are the same.
5. The method of claim 3 , wherein the first liquid solvent and the second liquid solvent are different solvents.
6. The method of claim 1 , wherein each cycle further comprises drying the surface of the substrate after the liquid-phase dissolution step is performed to selectively dissolve the complex-bound modified surface layer of the material.
7. The method of claim 6 , wherein said drying the surface of the substrate comprises spin-drying the substrate to flush the one or more liquid-phase reactants from the surface of the substrate and re-expose the exposed surface of the material to the gas-phase reactant in a subsequent gas-phase surface modification step.
8. A method of etching a substrate using a hybrid atomic layer etching (ALE) process, comprising:
receiving the substrate, the substrate having a polycrystalline material exposed; and
selectively etching the polycrystalline material by performing multiple cycles of the hybrid ALE process, wherein each cycle comprises:
a) chemically modifying an exposed surface of the polycrystalline material to provide a modified surface layer, wherein said exposed surface is chemically modified by using a gas-phase oxidizing agent to oxidize the polycrystalline material and form a self-limited oxidized layer on the polycrystalline material via a self-limiting oxidation reaction, and wherein the self-limited oxidized layer is a passivation layer formed on the polycrystalline material;
b) binding a complexing agent to the self-limited oxidized layer formed on the polycrystalline material to provide a complex-bound modified surface layer; and
c) selectively removing the complex-bound modified surface layer of the polycrystalline material by exposing the complex-bound modified surface layer to a liquid solvent, which dissolves the complex-bound modified surface layer without dissolving the polycrystalline material underlying the complex-bound modified surface layer;
wherein the self-limited oxidized layer formed via the self-limiting oxidation reaction forms the passivation layer on the polycrystalline material that prevents further oxidation of the polycrystalline material before the complex-bound modified surface layer is exposed to the liquid solvent.
9. The method of claim 8 , wherein during each cycle, b) and c) are performed with at least partial temporal overlap.
10. The method of claim 9 , wherein the liquid solvent contains the complexing agent, and wherein the complex-bound modified surface layer is soluble in the liquid solvent.
11. The method of claim 8 , wherein during each cycle, b) and c) are performed sequentially with no temporal overlap.
12. The method of claim 11 , wherein the complexing agent is dissolved in a first liquid solvent, which differs from the liquid solvent used to dissolve the complex-bound modified surface layer, and wherein the complex-bound modified surface layer is insoluble in the first liquid solvent and soluble in the liquid solvent.
13. The method of claim 8 , wherein the polycrystalline material includes a transition metal.
14. The method of claim 8 , further comprising:
repeating steps a)-c) at least once until a desired amount of the polycrystalline material is removed from the substrate.
15. A method of etching a substrate using a hybrid atomic layer etching (ALE) process, comprising:
receiving the substrate, the substrate having a molybdenum (Mo) metal exposed; and
selectively etching the Mo metal by performing multiple cycles of the hybrid ALE process, wherein each cycle comprises:
a) chemically modifying an exposed surface of the Mo metal to provide a modified surface layer, wherein said exposed surface is chemically modified by using a gas-phase oxidizing agent containing ozone to oxidize the Mo metal and form a self-limited molybdenum oxide layer on the Mo metal via a self-limiting oxidation reaction, and wherein the self-limited molybdenum oxide layer is a passivation layer formed on the Mo metal;
b) binding a complexing agent to the self-limited molybdenum oxide layer formed on the Mo metal to provide a complex-bound modified surface layer; and
c) selectively removing the complex-bound modified surface layer of the Mo metal by exposing the complex-bound modified surface layer to a liquid solvent, which dissolves the complex-bound modified surface layer without dissolving the Mo metal underlying the complex-bound modified surface layer;
wherein the self-limited molybdenum oxide layer formed via the self-limiting oxidation reaction forms the passivation layer that prevents further oxidation of the Mo metal before the complex-bound modified surface layer is exposed to the liquid solvent; and
wherein b) and c) have at least partial temporal overlap.
16. The method of claim 15 , further comprising:
repeating steps a)-c) at least once until a desired amount of the Mo metal is removed from the substrate.
17. The method of claim 15 , wherein the liquid solvent contains the complexing agent, and wherein the complex-bound modified surface layer is soluble in the liquid solvent.
18. The method of claim 15 , further comprising:
d) rinsing the substrate to remove excess liquid solvent and unbound complexing agent; and
e) drying the substrate using a gas stream, a spin dry step and/or a drying agent.
19. The method of claim 18 , further comprising:
repeating steps a)-e) at least once until a desired amount of the Mo metal is removed from the substrate.