Non-volatile memory with sub-block programming
A non-volatile memory includes non-volatile memory cells divided into blocks, bit lines connected to the blocks, and a source line connected to the blocks. Each block includes multiple sub-blocks. Each sub-block includes multiple source side Gate Induced Drain Leakage (“GIDL”) generation transistors that are closer to the source line than the bit lines. GIDL generation transistors for each sub-block can be controlled separately from GIDL generation transistors for other sub-blocks of the same sub-block so that sub-blocks can be separately and independently erased and/or GIDL can be used to inhibit unselected sub-blocks from bring disturbed during programming.
1 . A non-volatile storage apparatus, comprising:
non-volatile memory cells grouped into blocks, each block includes multiple sub-blocks; and
a control circuit connected to the non-volatile memory cells, the control circuit is configured to perform a programming process for a selected sub-block of a selected block without programming data into one or more unselected sub-blocks of the selected block by causing Gate Induced Drain Leakage (“GIDL”) in the one or more unselected sub-blocks of the selected block during the programming process for the selected sub-block.
2 . The non-volatile storage apparatus of claim 1 , wherein:
each sub-block includes a bit line side and a source side; and
the control circuit is configured to perform the programming process for the selected sub-block of the selected block without programming data into one or more unselected sub-blocks of the selected block by causing GIDL at the source side of the one or more unselected sub-blocks of the selected block during the programming process for the selected sub-block.
3 . The non-volatile storage apparatus of claim 1 , wherein:
each sub-block includes a bit line side and a source side; and
the control circuit is configured to perform the programming process for the selected sub-block of the selected block without programming data into one or more unselected sub-blocks of the selected block by causing GIDL at the source side of the one or more unselected sub-blocks of the selected block during the programming process for the selected sub-block without causing GIDL at the bit line side of the one or more unselected sub-blocks of the selected block during the programming process for the selected sub-block.
4 . The non-volatile storage apparatus of claim 1 , wherein:
the programming process comprises pre-charging channels of memory cells in the one or more unselected sub-blocks, boosting channels of memory cells in the one or more unselected sub-blocks and applying a program voltage to selected memory cells in the selected sub-block; and
the control circuit is configured to cause the GIDL in the one or more unselected sub-blocks of the selected block concurrently with the applying the program voltage.
5 . The non-volatile storage apparatus of claim 1 , wherein:
the programming process comprises boosting channels of memory cells in the one or more unselected sub-blocks and applying a program voltage to selected memory cells in the selected sub-block; and
the control circuit is configured to cause the GIDL in the one or more unselected sub-blocks of the selected block during the boosting.
6 . The non-volatile storage apparatus of claim 1 , wherein:
the programming process comprises pre-charging channels of memory cells in the one or more unselected sub-blocks, boosting channels of memory cells in the one or more unselected sub-blocks and applying a program voltage to selected memory cells in the selected sub-block; and
the control circuit is configured to cause the GIDL in the one or more unselected sub-blocks of the selected block during the pre-charging.
7 . The non-volatile storage apparatus of claim 1 , further comprising:
a set of word lines connected to the selected sub-block of the selected block and connected to the one or more unselected sub-blocks of the selected block.
8 . The non-volatile storage apparatus of claim 1 , further comprising:
word lines connected to the selected block, all word lines connected to the selected block are connected to the selected sub-block of the selected block and the one or more unselected sub-blocks of the selected block.
9 . The non-volatile storage apparatus of claim 1 , further comprising:
a set of word lines connected to the selected block, each word line of the set of word lines is connected to all sub-blocks of the selected block;
a set of bit lines, each bit line is separately connected to all sub-blocks of the selected block;
a source line connected to all sub-blocks of the selected block; and
a set of source side select lines each connected to only one sub-block of the selected block.
10 . The non-volatile storage apparatus of claim 9 , further comprising:
a set of source side GIDL generation transistor control lines, each sub-block includes multiple source side GIDL generation transistors that are closer to the source line than the bit lines, each source side GIDL generation transistor control line of the set of source side GIDL generation transistor control lines is connected to source side GIDL generation transistors in only one sub-block of the selected block.
11 . The non-volatile storage apparatus of claim 1 , further comprising:
a set of word lines connected to the selected block;
a set of bit lines connected to the selected block; and
a set of source side GIDL generation transistor control lines, each sub-block includes multiple source side GIDL generation transistors that are closer to the source line than the bit lines, each source side GIDL generation transistor control line of the set of source side GIDL generation transistor control lines is connected to source side GIDL generation transistors in only one sub-block of the selected block;
wherein the control circuit is configured to cause GIDL in the one or more unselected sub-blocks of the selected block during the programming process for the selected sub-block by:
applying a program voltage to a selected word line;
applying an overdrive voltage to unselected word lines;
applying a program enable voltage to selected bit lines;
applying a program inhibit voltage to unselected bit lines;
applying a GIDL inhibit voltage to source side GIDL generation transistors in the selected sub-block of the selected block via a first subset of the source side GIDL generation transistor control lines; and
applying a GIDL enable voltage to source side GIDL generation transistors in the one or more unselected sub-blocks of the selected block via a second subset of the source side GIDL generation transistor control lines to cause the source side GIDL generation transistors in the one or more unselected sub-blocks to generate GIDL that increases voltage in channels of unselected memory cells connected to the selected word line in the one or more unselected sub-blocks to inhibit programming of the unselected memory cells connected to the selected word line in the one or more unselected sub-blocks in response to the applying of the program voltage to the selected word line.
12 . The non-volatile storage apparatus of claim 1 , wherein:
the non-volatile memory cells are arranged in NAND strings;
each of the NAND strings includes multiple non-volatile memory cells arranged in series with a drain side select transistor, a source side select transistor and a source side GIDL generation transistor; and
the control circuit is configured to cause GIDL in the one or more unselected sub-blocks of the selected block during the programming process for the selected sub-block by applying a GIDL inhibit voltage to the source side GIDL generation transistors in the selected sub-block of the selected block and applying a GIDL enable voltage to source side GIDL generation transistors in the one or more unselected sub-blocks of the selected block during the programming process for the selected sub-block.
13 . The non-volatile storage apparatus of claim 1 , further comprising:
a set of word lines connected to the selected block, each word line of the set of word lines is connected to all sub-blocks of the selected block;
a set of bit lines, each bit line is separately connected to all sub-blocks of the selected block; and
a source line connected to all sub-blocks of the selected block;
a set of source side select lines each connected to only one sub-block of the selected block, multiple source side select lines of the set of source side select lines are connected to each block; and
a set of source side GIDL generation transistor control lines each connected to only one sub-block of the selected block, multiple source side GIDL generation transistor control lines of the set of source side GIDL generation transistor control lines are connected to each block, each sub-block includes multiple source side GIDL generation transistors that are closer to the source line than the bit lines, each source side GIDL generation transistor control line of the set of source side GIDL generation transistor control lines is connected to source side GIDL generation transistors in only one sub-block of the selected block.
14 . A method for programming, comprising:
applying a program voltage to a selected word line;
applying an overdrive voltage to unselected word lines;
applying a program enable voltage to selected bit lines;
applying a program inhibit voltage to unselected bit lines;
applying a Gate Induced Drain Leakage (“GIDL”) inhibit voltage to source side GIDL generation transistors in the selected sub-block of the selected block; and
applying a GIDL enable voltage to source side GIDL generation transistors in the one or more unselected sub-blocks of the selected block to cause the source side GIDL generation transistors in the one or more unselected sub-blocks to generate GIDL that increases voltage in channels of unselected memory cells connected to the selected word line in the one or more unselected sub-blocks to inhibit programming of the unselected memory cells connected to the selected word line in the one or more unselected sub-blocks in response to the applying of the program voltage to the selected word line.
15 . The method of claim 14 , wherein:
the applying the GIDL inhibit voltage to source side GIDL generation transistors in the selected sub-block of the selected block and the applying the GIDL enable voltage to source side GIDL generation transistors in the one or more unselected sub-blocks of the selected block are performed concurrently.
16 . The method of claim 14 , wherein:
the applying the GIDL inhibit voltage to source line side GIDL generation transistors in the selected sub-block of the selected block and the applying the GIDL enable voltage to source side GIDL generation transistors in the one or more unselected sub-blocks of the selected block are performed concurrently with the applying the program voltage to the selected word line.
17 . The method of claim 14 , wherein:
the applying the GIDL inhibit voltage to source line side GIDL generation transistors in the selected sub-block of the selected block and the applying the GIDL enable voltage to source side GIDL generation transistors in the one or more unselected sub-blocks of the selected block are started prior to the applying the program voltage to the selected word line.
18 . The method of claim 14 , further comprising:
pre-charging channels of memory cells in the one or more unselected sub-blocks;
boosting channels of memory cells in the one or more unselected sub-blocks; and
applying a program voltage pulse to memory cells in the selected sub-block;
wherein:
the applying the program voltage is performed as part of the applying the program voltage pulse,
the applying the overdrive voltage to unselected word lines is performed as part of the boosting, and
the applying the GIDL inhibit voltage and the applying the GIDL enable voltage are performed as part of the pre-charging channels.
19 . The method of claim 14 , further comprising:
pre-charging channels of memory cells in the one or more unselected sub-blocks;
boosting channels of memory cells in the one or more unselected sub-blocks; and
applying a program voltage pulse to selected memory cells in the selected sub-block;
wherein:
the applying the program voltage is performed as part of the applying the program voltage pulse,
the applying the overdrive voltage to unselected word lines is performed as part of the boosting, and
the applying the GIDL inhibit voltage and the applying the GIDL enable voltage are performed as part of the boosting.
20 . A non-volatile storage apparatus, comprising:
a non-volatile memory structure comprising:
non-volatile memory cells arranged as NAND strings and grouped into blocks, each block includes multiple sub-blocks, each sub-block includes multiple NAND strings, each NAND string includes multiple non-volatile memory cells arranged in series with at least at least one source side Gate Induced Drain Leakage (“GIDL”) generation transistor,
a set of word lines, each word line of the set of word lines is connected to all sub-blocks of the selected block, each word line of the set of word lines is connected to all NAND strings of the selected block,
bit lines connected to the blocks, each bit line is connected to one NAND string in each sub-block of a selected block, and
a source line connected to each of the NAND strings; and
means for programming data into a selected sub-block of the selected block and using GIDL to inhibit programming in one or more unselected sub-blocks of the selected block.