Chuck assembly, fabrication system therewith, and method of fabricating semiconductor device using the same
A chuck assembly includes a chuck base including a lower base and an upper base that is on the lower base, a ceramic plate on the upper base, an isolator ring enclosing an outer sidewall of the lower base, a focus ring on an edge portion of the lower base and the isolator ring, the focus ring enclosing an outer sidewall of the upper base, and a pad that is between the edge portion of the lower base and the focus ring. The pad may contain a nonmetal conductive material.
1 . A chuck assembly, comprising:
a chuck base including a lower base and an upper base that is on the lower base;
a ceramic plate on the upper base;
an isolator ring enclosing an outer sidewall of the lower base;
a focus ring on an edge portion of the lower base and the isolator ring, the focus ring enclosing an outer sidewall of the upper base; and
a pad that is between the edge portion of the lower base and the focus ring,
wherein the focus ring includes
a lower layer,
a ceramic layer on the lower layer, and
an upper layer on the ceramic layer, the upper layer enclosing a substrate on the ceramic plate,
wherein the pad contains a first electrically conductive nonmetal material and at least one material selected from the group consisting of aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), and yttrium oxide (Y 2 O 3 ),
wherein the lower layer contains a second electrically conductive nonmetal material, and
wherein each of the first electrically conductive nonmetal material and the second electrically conductive nonmetal material includes at least one material selected from the group consisting of carbon nanotube, graphene, and fullerene.
2 . The chuck assembly of claim 1 , wherein the pad connects the focus ring to the edge portion of the lower base.
3 . The chuck assembly of claim 1 , wherein the pad has a thickness of 0.5 mm to 0.7 mm and a width of 10 mm to 12 mm.
4 . The chuck assembly of claim 1 , further comprising an insulation coating layer that is
between the edge portion of the lower base and the pad, and
between an inner sidewall of the focus ring and the outer sidewall of the upper base.
5 . The chuck assembly of claim 1 , further comprising a first adhesive layer that is between the upper base and the ceramic plate.
6 . The chuck assembly of claim 5 , wherein the focus ring further comprises a second adhesive layer, wherein the second adhesive layer is between the lower layer and the ceramic layer, the second adhesive layer enclosing an outer sidewall of the first adhesive layer.
7 . A semiconductor device fabrication system, comprising:
a chamber;
a shower head in an upper portion of the chamber; and
a chuck assembly in a lower portion of the chamber, the chuck assembly configured to contain a substrate,
wherein the chuck assembly includes
a chuck base including a lower base and an upper base that is on the lower base,
a ceramic plate on the upper base,
an isolator ring enclosing an outer sidewall of the lower base,
a focus ring on an edge portion of the lower base and the isolator ring such that the focus ring encloses an outer sidewall of the upper base, and
a pad that is between the edge portion of the lower base and the focus ring,
wherein the focus ring includes
a lower layer,
a ceramic layer on the lower layer, and
an upper layer on the ceramic layer, the upper layer enclosing the substrate on the ceramic plate,
wherein the pad contains a first electrically conductive nonmetal material and at least one material selected from the group consisting of aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), and yttrium oxide (Y 2 O 3 ),
wherein the lower layer contains a second electrically conductive nonmetal material, and
wherein each of the first electrically conductive nonmetal material and the second electrically conductive nonmetal material includes at least one material selected from the group consisting of carbon nanotube, graphene, and fullerene.
8 . The semiconductor device fabrication system of claim 7 , further comprising a power supply, which is connected to the chuck base and is configured to supply a radio frequency power to the chuck base.
9 . The semiconductor device fabrication system of claim 8 , wherein the radio frequency power has at least one of a frequency of 400 kHz, a frequency of 2 MHZ, or a frequency of 60 MHz.
10 . The semiconductor device fabrication system of claim 7 , further comprising a cooling water supply which is configured to supply a cooling water into the chuck assembly.
11 . The semiconductor device fabrication system of claim 9 , further comprising a coolant supply which is configured to supply a coolant into the chuck assembly.
12 . A method of fabricating a semiconductor device, the method comprising:
placing a substrate on a chuck assembly;
providing a reaction gas on the substrate; and
supplying a radio frequency power to produce a plasma on the substrate,
wherein the chuck assembly includes
a chuck base including a lower base and an upper base that is on the lower base;
a ceramic plate on the upper base;
an isolator ring enclosing an outer sidewall of the lower base;
a focus ring on an edge portion of the lower base and the isolator ring, the focus ring enclosing an outer sidewall of the upper base; and
a pad that is between the edge portion of the lower base and the focus ring,
wherein the focus ring includes
a lower layer,
a ceramic layer on the lower layer, and
an upper layer on the ceramic layer, the upper layer enclosing the substrate on the ceramic plate,
wherein the pad contains a first electrically conductive nonmetal material and at least one material selected from the group consisting of aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), and yttrium oxide (Y 2 O 3 ),
wherein the lower layer contains a second electrically conductive nonmetal material, and
wherein each of the first electrically conductive nonmetal material and the second electrically conductive nonmetal material includes at least one material selected from the group consisting of carbon nanotube, graphene, and fullerene.
13 . The method of claim 12 , wherein the radio frequency power has at least one of a frequency of 400 kHz, a frequency of 2 MHz, or a frequency of 60 MHz.
14 . The method of claim 13 , wherein the focus ring and the pad have an impedance of 276.7Ω to the radio frequency power, the radio frequency power having the frequency of 400 kHz.
15 . The method of claim 13 , wherein the focus ring and the pad have an impedance of 57.8Ω to the radio frequency power, the radio frequency power having the frequency of 2 MHz.
16 . The method of claim 13 , wherein the focus ring and the pad have an impedance of 11.8Ω to the radio frequency power, the radio frequency power having the frequency of 60 MHz.