Plasma processing apparatus
A plasma processing apparatus includes a mounting stage on which a substrate is mounted, a focus ring arranged around a periphery of the mounting stage, a plurality of magnetic members arranged at a surface of the focus ring and a surface of the mounting stage facing opposite each other, and a temperature adjustment unit configured to adjust a temperature of the focus ring by introducing a heat transfer gas between the surface of the focus ring and the surface of the mounting stage facing opposite each other.
1. A plasma processing apparatus comprising:
a mounting stage on which a substrate is mounted;
a focus ring disposed over a peripheral region of the mounting stage;
a first magnet, magnetic body, or magnetic O-ring member provided at the bottom surface of the focus ring;
a second magnet, magnetic body, or magnetic O-ring member provided at the upper surface of the mounting stage and arranged at a position opposite the first magnet, magnetic body, or magnetic O-ring member;
a plurality of members that are made of a material different from the focus ring and are provided in between the focus ring and the mounting stage, whereby the plurality of members seal a heat transfer space defined by a bottom surface of the focus ring, an upper surface of the mounting stage, and the plurality of members, each member of the plurality of members being provided on opposite sides of the space; and
a temperature adjustment unit configured to adjust a temperature of the focus ring, the temperature adjustment unit including a heat transfer gas supply unit, wherein
the heat transfer supply unit is configured to supply a heat transfer gas into the heat transfer space,
the bottom surface of the focus ring, facing opposite the mounting stage, includes a concavo-convex surface,
the heat transfer space has a height of up to 10 μm,
each of the plurality of members are provided in a groove formed in at least one of the bottom surface of the focus ring or the upper surface of the mounting stage,
a first member of the plurality of members being provided along an outer circumference of the focus ring and a second member of the plurality of members being provided along an inner circumference of the focus ring, and
each of the first member and the second member is an O-ring member.
2. The plasma processing apparatus as claimed in claim 1 , wherein the temperature adjustment unit adjusts the temperature of the focus ring by controlling a pressure of the heat transfer gas that is supplied between the bottom surface of the focus ring and the upper surface of the mounting stage.
3. The plasma processing apparatus as claimed in claim 1 , wherein at least one of the bottom surface of the focus ring and the upper surface of the mounting stage facing opposite each other includes a groove for diffusing the heat transfer gas.
4. The plasma processing apparatus as claimed in claim 1 , wherein the mounting stage includes an electrostatic chuck.
5. The plasma processing apparatus as claimed in claim 1 , wherein the temperature adjustment unit adjusts the temperature of the focus ring by supplying the heat transfer gas between the bottom surface of the focus ring and the upper surface of the mounting stage facing opposite each other.
6. The plasma processing apparatus as claimed in claim 1 , wherein the heat transfer gas supply unit of the plasma processing apparatus is provided as a single heat transfer gas supply unit.
7. The plasma processing apparatus as claimed in claim 1 , wherein
the first member and the second member of the plurality of members are provided in the upper surface of the mounting stage.
8. The plasma processing apparatus as claimed in claim 1 , wherein the first member and the second member are provided in the grooves in the bottom surface of the focus ring; wherein the first member is the first magnetic O-ring member, and the second magnet or magnetic body is located opposite the first member; and the second member is a third magnetic O-ring member, and a fourth magnet or magnetic body is located in the upper surface of the mounting stage opposite the second member.
9. The plasma processing apparatus as claimed in claim 1 , wherein the first magnet or magnetic body is provided at a center position of the bottom surface of the focus ring; and the second magnet or magnetic body, is provided at a center position of the upper surface of the mounting stage and arranged at a position opposite the first magnet or magnetic body.
10. The plasma processing apparatus as claimed in claim 1 , wherein the first member and the second member are provided in the grooves in the bottom surface of the focus ring; wherein the first member is the first magnetic O-ring member, and the second magnetic O-ring member is located opposite the first member; and the second member is a third magnetic O-ring member, and a fourth magnet or magnetic body is located in the upper surface of the mounting stage opposite the second member.
11. The plasma processing apparatus as claimed in claim 1 , wherein the first member is provided in the groove in the bottom surface of the focus ring and the second member is provided in the groove in the upper surface of the mounting stage; wherein the first member is the first magnetic O-ring member, and the second magnet or magnetic body is located opposite the first member; and the second member is a third magnetic O-ring member, and a fourth magnet or magnetic body located in the bottom surface of the focus ring and opposite the second member.
12. A plasma processing apparatus comprising:
a mounting stage on which a substrate is mounted;
a focus ring disposed over a peripheral region of the mounting stage;
a first magnet or magnetic body provided at a center position of the bottom surface of the focus ring;
a second magnet or magnetic body provided at a center position of the upper surface of the mounting stage and arranged at a position opposite the first magnet or magnetic body;
a plurality of members that are made of a material different from the focus ring and are provided in between the focus ring and the mounting stage, whereby the plurality of members seal a heat transfer space defined by a bottom surface of the focus ring, an upper surface of the mounting stage, and the plurality of members, each member of the plurality of members being provided on opposite sides of the space; and
a temperature adjustment unit configured to adjust a temperature of the focus ring, the temperature adjustment unit including a heat transfer sheet, wherein
the heat transfer sheet is provided in the heat transfer space,
the bottom surface of the focus ring, facing opposite the mounting stage, includes a concavo-convex surface,
the heat transfer space has a height of up to 10 μm,
a first member and a second member of the plurality of members are provided between the bottom surface of the focus ring and the upper surface of the mounting stage,
the first member being provided along an outer circumference of the focus ring and the second member being provided along an inner circumference of the focus ring, and
each of the first member and the second member is an O-ring member.
13. The plasma processing apparatus as claimed in claim 12 , wherein the temperature adjustment unit uses the heat transfer sheet to adjust the temperature of the focus ring.