Semiconductor structure
A semiconductor structure includes a fin structure formed over a substrate. The structure also includes a gate structure formed across the fin structure. The structure also includes source/drain epitaxial structures formed on opposite sides of the gate structure. The structure also includes an inter-layer dielectric (ILD) structure formed over the gate structure. The structure also includes a contact blocking structure formed through the ILD structure over the source/drain epitaxial structure. A lower portion of the contact blocking structure is surrounded by an air gap, and the air gap is covered by a portion of the ILD structure.
1 . A semiconductor structure, comprising:
a fin structure formed over a substrate;
a gate structure formed across the fin structure;
source/drain epitaxial structures formed on opposite sides of the gate structure;
an inter-layer dielectric (ILD) structure formed over the gate structure; and
a contact blocking structure formed through the ILD structure over the source/drain epitaxial structure,
wherein a lower portion of the contact blocking structure is surrounded by an air gap, and the air gap is covered by a portion of the ILD structure.
2 . The semiconductor structure as claimed in claim 1 , further comprising:
a doping region formed in the ILD structure over the air gap.
3 . The semiconductor structure as claimed in claim 1 , wherein a dopant in the doping region comprises Ge.
4 . The semiconductor structure as claimed in claim 1 , wherein a top surface of the contact blocking structure is wider than a bottom surface of the contact blocking structure.
5 . The semiconductor structure as claimed in claim 1 , wherein the air gap protrudes upward into the ILD structure.
6 . The semiconductor structure as claimed in claim 1 , wherein the air gap is below a bottom surface of the contact blocking structure.
7 . The semiconductor structure as claimed in claim 1 , further comprising:
a contact structure formed over the source/drain epitaxial structure;
wherein the contact structure and the contact blocking structure are separated by the air gap.
8 . A semiconductor structure, comprising:
a fin structure formed over a substrate;
a gate structure formed across the fin structure;
a source/drain epitaxial structure formed over the fin structure on opposite sides of the gate structure;
a contact structure formed over the source/drain epitaxial structure;
a contact blocking structure formed in the contact structure,
wherein the contact blocking structure is separated from the contact structure by an air gap.
9 . The semiconductor structure as claimed in claim 8 , further comprising:
an ILD structure formed over the gate structure,
wherein a portion of the ILD structure is in direct contact with the contact blocking structure.
10 . The semiconductor structure as claimed in claim 8 , further comprising:
a doping region formed in a top portion of the ILD structure,
wherein the doping region is in direct contact with the contact blocking structure.
11 . The semiconductor structure as claimed in claim 10 , further comprising:
an etch stop layer deposited over the gate structure,
wherein the air gap is formed through the etch stop layer.
12 . The semiconductor structure as claimed in claim 11 , wherein a bottom surface of the doping region is level with a top surface of an etch stop layer.
13 . The semiconductor structure as claimed in claim 8 , wherein an area of a top portion of the contact blocking structure is less than an area of a bottom portion of the contact blocking structure.
14 . The semiconductor structure as claimed in claim 8 , wherein the contact blocking structure is separated from the fin structure by the air gap.
15 . A semiconductor structure, comprising:
a gate structure formed over a substrate;
a source/drain epitaxial structure adjacent to the gate structure;
a contact etch stop layer formed over the gate structure;
an inter-layer dielectric (ILD) structure formed over the contact etch stop layer and comprising a doping region; and
a contact blocking structure formed through the ILD structure and the contact etch stop layer over the source/drain epitaxial structure,
wherein the contact blocking structure is in contact with the doping region and spaced apart from the contact etch stop layer by an air gap.
16 . The semiconductor structure as claimed in claim 15 , wherein the doping region is in contact with the contact etch stop layer.
17 . The semiconductor structure as claimed in claim 15 , wherein the contact blocking structure is spaced apart from a bottom portion of the ILD structure by the air gap.
18 . The semiconductor structure as claimed in claim 17 , wherein a Ge concentration of the doping region is greater than a Ge concentration of the bottom portion of the ILD structure.
19 . The semiconductor structure as claimed in claim 15 , further comprising a metal semiconductor compound layer over the source/drain epitaxial structure,
wherein the contact blocking structure is spaced apart from the metal semiconductor compound layer by the air gap.
20 . The semiconductor structure as claimed in claim 15 , wherein the air gap is formed over an edge of the source/drain epitaxial structure.