Semiconductor storage device with overlapping contacts and surrounding insulating layer
A semiconductor storage device includes a semiconductor substrate and a conductive layer separated from the semiconductor substrate in a first direction. The conductive layer extends in a second direction parallel to the semiconductor substrate. A semiconductor layer extends in the first direction through the conductive layer. A first contact extends in the first direction and is connected to a surface of the conductive layer facing away from the semiconductor substrate. A first insulating layer extends in the first direction, and a second insulating layer extends along the first insulating layer in the first direction. Each of the first and second insulating layers entirely overlaps with the first contact when viewed in the first direction.
1 . A semiconductor storage device comprising:
a semiconductor substrate having a first surface;
a plurality of first conductive layers stacked in a first direction intersecting the first surface;
a plurality of second conductive layers stacked in the first direction, the plurality of second conductive layers being between the first surface and the plurality of first conductive layers;
a semiconductor layer extending in the first direction through the plurality of first conductive layers and the plurality of second conductive layers;
a first contact extending in the first direction and connected to a surface of one of the first conductive layers facing away from the semiconductor substrate;
a plurality of first insulating layers, the first insulating layers alternating with the first conductive layers along the first direction;
a plurality of second insulating layers, the second insulating layers alternating with the second conductive layers along the first direction;
a plurality of third insulating layers, each of the plurality of third insulating layers being provided at the same height as one of the plurality of first conductive layers in a second direction along the first surface of the semiconductor substrate, and in contact with at least one of the plurality of first insulating layers in the first direction; and
a plurality of fourth insulating layers, each of the plurality of fourth insulating layers being provided at the same height as one of the plurality of second conductive layers in the second direction, and in contact with at least one of the plurality of second insulating layers in the first direction, wherein
the first contact includes a first portion, a second portion, and a third portion, the first portion extending through some of the first conductive layers, the second portion extending through the second conductive layers, and the third portion being between the first portion and the second portion in the first direction and the third portion being in contact with the first portion and the second portion, and
a width of the third portion in the second direction is greater than a width of the first portion in the second direction.
2 . The semiconductor storage device according to claim 1 , wherein the width of the third portion in the cross section is less than a width of the second portion in the cross section.
3 . The semiconductor storage device according to claim 1 , wherein the width of the third portion in the cross section is greater than a width of the second portion in the cross section.
4 . The semiconductor storage device according to claim 1 , further comprising:
a fifth insulating layer provided in contact with and surrounding the third portion of the first contact,
wherein the fifth insulating layer contains a material that is not in the first conductive layers, the first insulating layers, the second conductive layers, or the second insulating layers.
5 . The semiconductor storage device according to claim 1 , wherein the second portion of the contact in a cross-sectional plane perpendicular to the first direction has a plurality of radially-expanded regions.
6 . The semiconductor storage device according to claim 1 , further comprising:
a second contact extending in the first direction through the plurality of first conductive layers, a length of the second contact in the first direction being smaller than a length of the first contact in the first direction.
7 . The semiconductor storage device according to claim 6 , further comprising:
a third contact extending in the first direction and connected to a surface of other one of the first conductive layers facing away from the semiconductor substrate;
and
a fifth insulating layer provided in contact with and surrounding the third portion of the first contact and the second contact,
wherein the fifth insulating layer contains a material that is not in the first conductive layers, the first insulating layers, the second conductive layers, or the second insulating layers.
8 . The semiconductor storage device according to claim 1 , further comprising:
a third contact extending in the first direction and connected to a surface of other one of the first conductive layers facing away from the semiconductor substrate;
and
a fifth insulating layer provided in contact with and surrounding the third portion of the first contact and the second contact,
wherein the fifth insulating layer contains a material that is not in the first conductive layers, the first insulating layers, the second conductive layers, or the second insulating layers.
9 . The semiconductor storage device according to claim 1 , wherein the plurality of third and fourth insulating layers comprises silicon oxide.
10 . The semiconductor storage device according to claim 1 , wherein the plurality of third and fourth insulating layers includes gaps.
11 . The semiconductor storage device according to claim 1 , further comprising:
a sixth insulating layer extending in the first direction, a length of the first insulating layer in the first direction being greater than a length of the first insulating layer in the second direction; and
a seventh insulating layer extending along the sixth insulating layer in the first direction, a length of the second insulating layer in the first direction being greater than a length of the second insulating layer in the second direction,
wherein each of the sixth and seventh insulating layers entirely overlaps with the first contact when viewed in the first direction.
12 . The semiconductor storage device according to claim 11 , wherein a cross-sectional shape of the semiconductor layer in a plane perpendicular to the first direction is same as a cross-sectional shape of the sixth insulating layer in the plane.
13 . The semiconductor storage device according to claim 12 , wherein a cross-sectional shape of the seventh insulating layer in the plane is same as the cross-sectional shape of the sixth insulating layer in the plane.
14 . The semiconductor storage device according to claim 11 , further comprising:
an eighth insulating layer extending along the first and second insulating layers in the first direction,
wherein the eighth insulating layer entirely overlaps with the first contact when viewed in the first direction.
15 . The semiconductor storage device according to claim 14 , wherein
the sixth and seventh insulating layers are aligned in the second direction, and
the sixth and eighth insulating layers are aligned in a third direction intersecting the first surface, the third direction being different from the second direction.
16 . The semiconductor storage device according to claim 14 , wherein the sixth, seventh, and eighth insulating layers are aligned in the second direction.
17 . The semiconductor storage device according to claim 14 , wherein a distance between the sixth and seventh insulating layers in a direction along the first surface is equal to a distance between the sixth and eighth insulating layers in a direction along the first surface.
18 . The semiconductor storage device according to claim 1 , further comprising:
a ninth insulating layer extending within the first contact in the first direction.
19 . The semiconductor storage device according to claim 1 , wherein
a plurality of memory cell transistors is formed along the semiconductor layer, and
the plurality of first and second conductive layers is a gate electrode of one of the memory cell transistors.