IP Library › Granted Patent US 12,566,671
Granted Patent B2
US 12,566,671 · App. 18/658,918 · Granted Mar 3, 2026

Memory device with dynamic processing level calibration

Inventors: Larry J. Koudele (Erie, CO); Bruce A. Liikanen (Berthoud, CO)
Assignee: Micron Technology, Inc.
G06F11/142G06F11/073G11C11/5642G11C16/26G11C29/021G11C29/028G11C29/52G06F2201/805G11C2029/4402
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,566,671
App. No.
18/658,918
Granted
Mar 3, 2026
Kind
B2
Abstract

A system includes a memory array; and a processing device coupled to the memory array. The processing device may be configured to iteratively adjust an active processing level, wherein, for each iteration, the processing device is configured to: determine a first set of read results corresponding to the active processing level, determine a second set of read results based on an offset processing level different than the active processing level, and incrementally adjust the active processing level based on a comparison of the first and the second read results.

Claims (59)

1 . A system, comprising:

a memory array; and

a processing device coupled to the memory array, the processing device configured to iteratively adjust an active processing level used to process data stored in the memory array, wherein, the processing device is configured to:

determine a first set of read results based on the active processing level,

determine a second set of read results based on an offset processing level different from the active processing level, and

adjust the active processing level to the offset processing level when the second set of read results is better than the first set of read results, wherein the iterative adjustment continues until a stop condition.

2 . The system of claim 1 , wherein the data is stored in the memory array according to a plurality of memory pages, and wherein the active processing level is adjusted per each of the plurality of memory pages.

3 . The system of claim 2 , wherein one of the plurality of memory pages is randomly selected for adjusting the corresponding active processing level, wherein the one of the plurality of memory pages is selected from a fully-programmed memory block of the memory array.

4 . The system of claim 1 , wherein the first and the second sets of read results are each error counts, and wherein the active processing level is a read level voltage.

5 . The system of claim 4 , wherein:

the offset processing level is a first offset processing level;

the processing device is further configured to:

determine a third set of read results based on using a second offset processing level different than the active processing level and the first offset processing level; and

incrementally adjust the current processing level includes either increasing or decreasing the active processing level based on comparing (1) a first difference in error counts between the first and second sets of read results and (2) a second difference in error counts between the first and third sets of read results.

6 . The system of claim 5 , wherein:

the first and the second offset processing levels are offset in opposite directions from the active processing level by an offset amount; and

incrementally increasing or decreasing the active processing level includes adjusting in a direction that corresponds to a lower change in error counts.

7 . The system of claim 6 , wherein:

the first processing level is less than the active processing level by the offset amount;

the second processing level is greater than the active processing level by the offset amount; and

incrementally adjusting the active processing level includes decreasing the active processing level by an increment when the first difference in error counts is less than the second difference in error counts.

8 . The system of claim 6 , wherein:

the first processing level is less than the active processing level by the offset amount;

the second processing level is greater than the active processing level by the offset amount; and

incrementally adjusting the active processing level includes increasing the active processing level by an increment when the second difference in error counts is less than the first difference in error counts.

9 . The system of claim 1 , wherein the processing device is further configured to stop adjusting when the comparison between the first and second sets of read results indicates that the active processing level is at or within a threshold range around an optimal level for minimizing an error characteristic.

10 . The system of claim 9 , wherein the processing device is further configured to determine that the active processing level is at or near an optimal level based on comparing a previous change direction and a current change direction, wherein the previous change direction is calculated based on a previous processing level and the active processing level, and wherein the current change direction based on active processing level and the updated level.

11 . A method of operating a system including a processing device and a memory array, the method comprising:

iteratively adjusting an active processing level based on:

determining a first set of read results based on the active processing level;

determining a second set of read results based on an offset processing level different from the active processing level; and

adjusting the active processing level to the offset processing level when the second set of read results is better than the first set of read results, wherein the iterative adjustment continues until a stop condition.

12 . The method of claim 11 , further comprising updating the offset processing level to a different value based on the comparison between the first and second sets of read results across one or more previous adjustments.

13 . The method of claim 11 , further comprising randomly selecting a memory page from a fully-programmed memory block of the memory array, wherein the active processing level for the selected memory page is adjusted.

14 . The method of claim 11 , wherein the first and second sets of read results are each error counts, and wherein the active processing level is a read level voltage.

15 . The method of claim 11 , wherein the offset processing level is a first offset processing level, the method further comprising:

determining a third set of read results using a second offset processing level different than the active processing level and the first offset processing level, and

wherein:

adjusting the active processing level includes increasing or decreasing the active processing level based on comparing (1) a first difference in error counts between the first and second sets of read results and (2) a second difference in error counts between the first and third sets of read results.

16 . The method of claim 15 , wherein:

the first and the second offset processing levels are offset in opposite directions from the active processing level by an offset amount; and

incrementally increasing or decreasing the active processing level includes adjusting in a direction that corresponds to a lower change in error counts.

17 . The method of claim 16 , wherein:

the first processing level is less than the active processing level by the offset amount;

the second processing level is greater than the active processing level by the offset amount; and

adjusting the active processing level includes (1) decreasing the active processing level by an increment when the first difference in error counts is less than the second difference in error counts or (2) increasing the active processing level by the increment when the second difference in error counts is less than the first difference in error counts.

18 . The method of claim 11 , further comprising stopping the adjustment when the comparison between the first and second sets of read results indicates that the active processing level is at or within a threshold range around an optimal level for minimizing an error characteristic.

19 . The method of claim 18 , further comprising:

tracking a previous adjustment direction of either increasing or decreasing the active processing level for one or more previous adjustments leading up to a current adjustment;

calculating a current adjustment direction for current adjustment; and

determining that the active processing level is at or within the offset range around the optimal level when the previous adjustment direction is different than the current adjustment direction.

20 . A non-volatile memory system, comprising:

a memory array; and

a processing device coupled to the memory array, the processing device configured to iteratively adjust an active read level used to process data stored in the memory array, the processing device configured to:

determine a first read result based on a first offset processing level different from the active processing level,

determine a second read result based on a second offset processing level different from the active processing level and the first offset processing level, and

adjust the active processing level to the offset processing level when the second set of read results is better than the first set of read results,

wherein the processing device is configured to iteratively adjust the active processing level until a change direction is identified based on comparing the first and the second read results wherein the change direction is different from a previous direction associated with a preceding iteration, and

set the active processing level based on the identified change direction.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 6, 2024
From: KOUDELE, LARRY J.; LIIKANEN, BRUCE A.
To: MICRON TECHNOLOGY, INC.
Reel/Frame 067650/0438 →
Continuity (4)
Continuation 17748366 · May 19, 2022
Continuation 16566692 · Sep 10, 2019
Continuation 15605858 · May 25, 2017
Related Publication 20240289226A1 · Aug 29, 2024
References Cited (179)
US 8112064B2 · Fukaya et al. · 2012 [cited by applicant]
US 8576625B1 · Yang et al. · 2013 [cited by applicant]
US 9092350B1 · Jeon et al. · 2015 [cited by applicant]
US 9117536B2 · Yoon et al. · 2015 [cited by applicant]
US 9153336B1 · Yang et al. · 2015 [cited by applicant]
US 9355735B1 · Chen et al. · 2016 [cited by applicant]
US 9454420B1 · Tai et al. · 2016 [cited by applicant]
US 9472298B1 · Louie et al. · 2016 [cited by applicant]
US 9558850B1 · Bialas et al. · 2017 [cited by applicant]
US 9761308B1 · Cometti · 2017 [cited by applicant]
US 9947380B2 · Nakayama · 2018 [cited by examiner]
US 10140040B1 · Koudele et al. · 2018 [cited by applicant]
US 10170195B1 · Ioannou et al. · 2019 [cited by applicant]
US 10210926B1 · Amiri et al. · 2019 [cited by applicant]
US 10276233B1 · Danjean et al. · 2019 [cited by applicant]
US 10379739B1 · Bazarsky et al. · 2019 [cited by applicant]
US 10388376B2 · Molas et al. · 2019 [cited by applicant]
US 10452480B2 · Koudele et al. · 2019 [cited by applicant]
US 10521140B2 · Koudele et al. · 2019 [cited by applicant]
US 10566063B2 · Sheperek et al. · 2020 [cited by applicant]
US 10664194B2 · Sheperek et al. · 2020 [cited by applicant]
US 10877827B2 · Miladinovic · 2020 [cited by applicant]
US 10936205B2 · Papandreou et al. · 2021 [cited by applicant]
US 10963327B2 · Camp et al. · 2021 [cited by applicant]
US 10990466B2 · Cadloni et al. · 2021 [cited by applicant]
US 11176036B2 · Camp et al. · 2021 [cited by applicant]
US 11177006B2 · Sheperek et al. · 2021 [cited by applicant]
US 11347405B2 · Koudele et al. · 2022 [cited by applicant]
US 11354193B2 · Koudele et al. · 2022 [cited by applicant]
US 11416173B2 · Sheperek et al. · 2022 [cited by applicant]
US 11526393B2 · Cadloni et al. · 2022 [cited by applicant]
US 11953980B2 · Cadloni et al. · 2024 [cited by applicant]
US 20020152459A1 · Bates et al. · 2002 [cited by applicant]
US 20050201148A1 · Chen et al. · 2005 [cited by applicant]
US 20060277429A1 · Dasari et al. · 2006 [cited by applicant]
US 20070025167A1 · Ziegelmayer et al. · 2007 [cited by applicant]
US 20070234144A1 · Gongwer et al. · 2007 [cited by applicant]
US 20080313387A1 · Shibata · 2008 [cited by applicant]
US 20090055680A1 · Honda et al. · 2009 [cited by applicant]
US 20090310404A1 · Cho et al. · 2009 [cited by applicant]
US 20100073069A1 · Wang et al. · 2010 [cited by applicant]
US 20100097857A1 · Cernea · 2010 [cited by applicant]
US 20100188919A1 · Fox et al. · 2010 [cited by applicant]
US 20100296350A1 · Kim · 2010 [cited by examiner]
US 20110013460A1 · Dong et al. · 2011 [cited by applicant]
US 20110119431A1 · Chowdhury · 2011 [cited by applicant]
US 20110167307A1 · Mori · 2011 [cited by applicant]
US 20110305090A1 · Roohparvar et al. · 2011 [cited by applicant]
US 20120030531A1 · Brewerton et al. · 2012 [cited by applicant]
US 20120213001A1 · Yang · 2012 [cited by applicant]
US 20120236641A1 · Hu · 2012 [cited by applicant]
US 20120236653A1 · Spessot et al. · 2012 [cited by applicant]
US 20120254699A1 · Ruby et al. · 2012 [cited by applicant]
US 20130007543A1 · Goss et al. · 2013 [cited by applicant]
US 20130024743A1 · Sharon et al. · 2013 [cited by applicant]
US 20130080858A1 · Lee et al. · 2013 [cited by applicant]
US 20130117604A1 · Ha · 2013 [cited by applicant]
US 20130117635A1 · Ok et al. · 2013 [cited by applicant]
US 20130132652A1 · Wood et al. · 2013 [cited by applicant]
US 20130227200A1 · Cometti et al. · 2013 [cited by applicant]
US 20130346805A1 · Sprouse et al. · 2013 [cited by applicant]
US 20140026003A1 · Chen et al. · 2014 [cited by applicant]
US 20140068365A1 · Chen et al. · 2014 [cited by applicant]
US 20140119124A1 · Kim et al. · 2014 [cited by applicant]
US 20140136928A1 · Mu et al. · 2014 [cited by applicant]
US 20140143630A1 · Mu et al. · 2014 [cited by applicant]
US 20140153330A1 · Yoon et al. · 2014 [cited by applicant]
US 20140157065A1 · Ong · 2014 [cited by applicant]
US 20140173172A1 · Yang · 2014 [cited by examiner]
US 20140226398A1 · Desireddi · 2014 [cited by examiner]
US 20140281661A1 · Milton et al. · 2014 [cited by applicant]
US 20140281767A1 · Alhussien et al. · 2014 [cited by applicant]
US 20140281808A1 · Lam · 2014 [cited by applicant]
US 20140355340A1 · Sharon et al. · 2014 [cited by applicant]
US 20140380123A1 · Liikanen et al. · 2014 [cited by applicant]
US 20150036432A1 · Huang · 2015 [cited by applicant]
US 20150085573A1 · Sharon et al. · 2015 [cited by applicant]
US 20150154064A1 · Ghaly et al. · 2015 [cited by applicant]
US 20150279473A1 · Yoo et al. · 2015 [cited by applicant]
US 20150309858A1 · Weilemann et al. · 2015 [cited by applicant]
US 20150378415A1 · George · 2015 [cited by applicant]
US 20160041891A1 · Malshe et al. · 2016 [cited by applicant]
US 20160092496A1 · Dietterich et al. · 2016 [cited by applicant]
US 20160099049A1 · Lee et al. · 2016 [cited by applicant]
US 20160099078A1 · Luo et al. · 2016 [cited by applicant]
US 20160117216A1 · Muchherla et al. · 2016 [cited by applicant]
US 20160132256A1 · Jung · 2016 [cited by applicant]
US 20160133334A1 · Zhang et al. · 2016 [cited by applicant]
US 20160147582A1 · Karakulak et al. · 2016 [cited by applicant]
US 20160148701A1 · Karakulak et al. · 2016 [cited by applicant]
US 20160148702A1 · Karakulak et al. · 2016 [cited by applicant]
US 20160148708A1 · Tuers et al. · 2016 [cited by applicant]
US 20160162185A1 · D'Abreu et al. · 2016 [cited by applicant]
US 20160179406A1 · Gorobets et al. · 2016 [cited by applicant]
US 20160218740A1 · Parthasarathy et al. · 2016 [cited by applicant]
US 20160225436A1 · Wang et al. · 2016 [cited by applicant]
US 20160232054A1 · Durgam · 2016 [cited by examiner]
US 20160259693A1 · Sundararaman et al. · 2016 [cited by applicant]
US 20160266792A1 · Amaki et al. · 2016 [cited by applicant]
US 20170053714A1 · Guy et al. · 2017 [cited by applicant]
US 20170091039A1 · Hong · 2017 [cited by applicant]
US 20170097868A1 · Kim et al. · 2017 [cited by applicant]
US 20170125111A1 · Sankaranarayanan et al. · 2017 [cited by applicant]
US 20170126255A1 · Colgrove et al. · 2017 [cited by applicant]
US 20170148510A1 · Bazarsky · 2017 [cited by examiner]
US 20170148525A1 · Kathawala et al. · 2017 [cited by applicant]
US 20170241843A1 · Jeon et al. · 2017 [cited by applicant]
US 20170263311A1 · Cometti · 2017 [cited by applicant]
US 20170269991A1 · Bazarsky et al. · 2017 [cited by applicant]
US 20170271031A1 · Sharon et al. · 2017 [cited by applicant]
US 20180189125A1 · Karlik et al. · 2018 [cited by applicant]
US 20180277228A1 · Takada et al. · 2018 [cited by applicant]
US 20180341416A1 · Koudele et al. · 2018 [cited by applicant]
US 20180341552A1 · Liikanen et al. · 2018 [cited by applicant]
US 20180341553A1 · Koudele et al. · 2018 [cited by applicant]
US 20180374550A1 · Barndt et al. · 2018 [cited by applicant]
US 20190043588A1 · Fisher et al. · 2019 [cited by applicant]
US 20190066802A1 · Malshe et al. · 2019 [cited by applicant]
US 20190103164A1 · Malshe et al. · 2019 [cited by applicant]
US 20190147964A1 · Yun et al. · 2019 [cited by applicant]
US 20190164599A1 · Avraham et al. · 2019 [cited by applicant]
US 20190171381A1 · Ioannou et al. · 2019 [cited by applicant]
US 20190172542A1 · Miladinovic · 2019 [cited by applicant]
US 20190278653A1 · Padilla et al. · 2019 [cited by applicant]
US 20190354312A1 · Chew et al. · 2019 [cited by applicant]
US 20190354313A1 · Sheperek et al. · 2019 [cited by applicant]
US 20190355426A1 · Sheperek et al. · 2019 [cited by applicant]
US 20190391865A1 · Cadloni et al. · 2019 [cited by applicant]
US 20200004440A1 · Koudele et al. · 2020 [cited by applicant]
US 20200004632A1 · Koudele et al. · 2020 [cited by applicant]
US 20200010459A1 · Van Dongen et al. · 2020 [cited by applicant]
US 20200019453A1 · Chew et al. · 2020 [cited by applicant]
US 20200019459A1 · Cadloni et al. · 2020 [cited by applicant]
US 20200117387A1 · Cadloni et al. · 2020 [cited by applicant]
US 20200118620A1 · Bazarsky et al. · 2020 [cited by applicant]
US 20200168282A1 · Sheperek et al. · 2020 [cited by applicant]
US 20200241801A1 · Sheperek et al. · 2020 [cited by applicant]
US 20200411117A1 · Malshe et al. · 2020 [cited by applicant]
US 20210012857A1 · Xie et al. · 2021 [cited by applicant]
US 20210027846A1 · Malshe et al. · 2021 [cited by applicant]
US 20210191638A1 · Miladinovic et al. · 2021 [cited by applicant]
US 20210200613A1 · Cadloni et al. · 2021 [cited by applicant]
US 20220036957A1 · Sheperek et al. · 2022 [cited by applicant]
US 20220276930A1 · Koudele et al. · 2022 [cited by applicant]
US 20220291847A1 · Koudele et al. · 2022 [cited by applicant]
US 20220391143A1 · Sheperek et al. · 2022 [cited by applicant]
US 20230057932A1 · Noh et al. · 2023 [cited by applicant]
US 20230099349A1 · Cadloni et al. · 2023 [cited by applicant]
US 20240248785A1 · Cadloni et al. · 2024 [cited by applicant]
CN 101573761A · 2009 [cited by applicant]
CN 102428520A · 2012 [cited by applicant]
CN 102884585A · 2013 [cited by applicant]
CN 103380416A · 2013 [cited by applicant]
CN 107179962A · 2017 [cited by applicant]
GB 2383455A · 2003 [cited by applicant]
GB 201604222 · 2016 [cited by applicant]
GB 2537484A · 2016 [cited by applicant]
KR 20060054374A · 2006 [cited by applicant]
KR 20080012199A · 2008 [cited by applicant]
KR 20090048130A · 2009 [cited by applicant]
KR 20140072637A · 2014 [cited by applicant]
KR 20170086173A · 2017 [cited by applicant]
WO 2005010638A2 · 2005 [cited by applicant]
European Application No. 19821879.4, Examination Report dated Oct. 11, 2023, 10 pages. [cited by applicant]
First Chinese Office Action for Chinese Application No. 201980035499.0 dated Nov. 10, 2023, 17 pages. [cited by applicant]
EP Patent Application No. 18805869.7—Extended European Search Report, dated Jan. 22, 2021, 8 pages. [cited by applicant]
EP Patent Application No. 18806016.4—Extended European Search Report, dated Mar. 5, 2021, 12 pages. [cited by applicant]
EP Patent Application No. 18806327.5—Partial Supplementary European Search Report, dated Jan. 29, 2021, 16 pages. [cited by applicant]
EP Patent Application No. 19821879.4—Extended European Search Report, dated Feb. 1, 2022, 9 pages. [cited by applicant]
European Application No. 18805869.7—Examination Report mailed Mar. 22, 2022, 7 pages. [cited by applicant]
International Application No. PCT/US2018/033873—International Search Report & Written Opinion, mailed Sep. 7, 2018, 9 pages. [cited by applicant]
International Application No. PCT/US2018/033877—International Search Report & Written Opinion, mailed Sep. 14, 2018, 22 pages. [cited by applicant]
International Application No. PCT/US2018/033881—International Search Report & Written Opinion, mailed Sep. 14, 2018, 12 pages. [cited by applicant]
International Application No. PCT/US2019/033179—International Search Report and Written Opinion, mailed Sep. 18, 2019, 12 pages. [cited by applicant]
Korean Patent Application No. 10-2019-7037973—Notice of Reasons for Rejection mailed Apr. 8, 2022, 12 pages. [cited by applicant]
KR Patent Application No. 10-2019-7037973—Korean Office Action and Search Report, dated Dec. 7, 2020, with English Translation, 13 pages. [cited by applicant]
TW Patent Application No. 107117756—Taiwanese Office Action and Search Report, dated Jan. 31, 2019, 19 pages. [cited by applicant]
TW Patent Application No. 107117756—Taiwanese Search Report, dated Jul. 22, 2019, with English Translation, 2 pages. [cited by applicant]
TW Patent Application No. 107117813—Taiwanese Office Action and Search Report, dated Mar. 18, 2019, 17 pages. [cited by applicant]