All-in-one dry development for metal-containing photoresist
Process condition management facilitates the combination of dry development and post-development treatment into a single process chamber, eliminating the necessity for a post-dry development bake step in a separate chamber during semiconductor manufacturing. Thermal dry development and plasma dry development may be performed in the same chamber. Thermal dry development, plasma dry development and passivation such as an O 2 flash treatment; or thermal dry development, plasma dry development, passivation and hardening operations are enabled without wafer transfer.
1 . A method for performing dry development, the method comprising:
performing, in a process chamber, a thermal dry development on a semiconductor substrate comprising an EUV-sensitive photoresist film using a halogen-containing gas in a plasma-free process, wherein the EUV-sensitive photoresist film comprises EUV-exposed portions and unexposed portions, wherein the thermal dry development selectively removes unexposed portions relative to the EUV-exposed portions to form a patterned photoresist mask; and
performing, in the process chamber after performing the thermal dry development, a plasma dry development on the semiconductor substrate by forming plasma with at least one reactive gas to descum, wherein the plasma dry development removes residues including byproducts of thermal dry development relative to the EUV-exposed portions, the byproducts having a different composition than the unexposed portions and the exposed portions of the EUV-sensitive photoresist film.
2 . The method of claim 1 , wherein the at least one reactive gas comprises one or more halogen-containing gases, one or more hydrogen-containing gases, or a combination thereof.
3 . The method of claim 1 , wherein the at least one reactive gas comprises one or more hydrogen-containing gases, wherein the one or more hydrogen-containing gases comprises CH 4 .
4 . The method of claim 1 , wherein the at least one reactive gas comprises multiple halogen-containing gases, each of the halogen-containing gases selected from the group consisting of: HBr, HCl, Cl 2 , and BCl 3 .
5 . The method of claim 4 , wherein the at least one reactive gas comprises HBr and Cl 2 , HBr and HCl, HBr and BCl 3 , or BCl 3 and Cl 2 .
6 . The method of claim 1 , wherein the at least one reactive gas comprises a combination of one halogen-containing gas selected from HBr, HCl, Cl 2 , and BCl 3 , and one hydrogen-containing gas selected from H 2 and CH 4 .
7 . The method of claim 6 , wherein the at least one reactive gas comprises HBr and H 2 , BCl 3 and CH 4 , Cl 2 and CH 4 , HCl and CH 4 , or HBr and CH 4 .
8 . The method of claim 1 , wherein performing plasma dry development by forming plasma with at least one reactive gas comprises forming plasma with at least one reactive gas and at least one non-reactive gas, wherein the non-reactive gas is selected from the group consisting of: N 2 , He, Ne, Ar, Kr, and Xe.
9 . The method of claim 8 , wherein the at least one reactive gas comprises HBr and the at least one non-reactive gas comprises N 2 .
10 . The method of claim 8 , wherein the at least one reactive gas comprises Cl 2 and the at least one non-reactive gas comprises N 2 .
11 . The method of claim 1 , wherein the halogen-containing gas comprises a hydrogen halide.
12 . The method of claim 1 , wherein the halogen-containing gas comprises hydrogen bromide (HBr).
13 . The method of claim 1 , wherein performing the thermal dry development occurs at a first pressure in the process chamber, and wherein performing the plasma dry development occurs at a second pressure that is lower than the first pressure in the same process chamber, wherein transitioning in the process chamber from the first pressure to the second pressure occurs in ten seconds or less.
14 . The method of claim 1 , wherein performing the thermal dry development and performing the plasma dry development occur at a temperature between about −60° C. and about 120° C.
15 . The method of claim 1 , wherein performing the thermal dry development and performing the plasma dry development are repeated alternatingly in the same process chamber.
16 . The method of claim 1 , wherein the plasma dry development is a cyclic plasma dry development, direct plasma dry development, remote plasma dry development, or continuous plasma dry development.
17 . The method of claim 16 , wherein the plasma dry development is continuous plasma dry development, and the continuous plasma dry development is performed at variable power, at constant power and pulsing bias, or at variable power and pulsing bias.
18 . An apparatus for performing dry development, the apparatus comprising:
a process chamber;
a controller having at least one processor and a memory, wherein the controller is configured with instructions to perform the following operations:
perform a thermal dry development in the process chamber on a semiconductor substrate comprising an EUV-sensitive photoresist film using a halogen-containing gas in a plasma free process, wherein the EUV-sensitive photoresist film comprises EUV-exposed portions and unexposed portions, wherein the thermal dry development selectively removes unexposed portions relative to the EUV-exposed portions to form a patterned photoresist mask; and
perform a plasma dry development after the thermal dry development in the same process chamber on the semiconductor substrate by forming a plasma of at least one reactive gas to descum, wherein the plasma dry development removes residues including byproducts of thermal dry development relative to the EUV-exposed portions, the byproducts having a different composition than the unexposed portions and the exposed portions of the EUV-sensitive photoresist film.
19 . The apparatus of claim 18 , wherein the at least one reactive gas comprises one or more halogen-containing gases, one or more hydrogen-containing gases, or a combination thereof.
20 . The apparatus of claim 18 , wherein the at least one reactive gas comprises multiple halogen-containing gases, each of the halogen-containing gases selected from the group consisting of: HBr, HCl, Cl 2 , and BCl 3 .
21 . The apparatus of claim 18 , wherein the at least one reactive gas comprises a combination of one halogen-containing gas selected from HBr, HCl, Cl 2 , and BCl 3 , and one hydrogen-containing gas selected from H2 and CH4.
22 . The apparatus of claim 18 , wherein the controller configured with instructions to perform plasma dry development by forming plasma with at least one reactive gas is configured with instructions to form plasma with at least one reactive gas and at least one non-reactive gas, wherein the non-reactive gas is selected from the group consisting of: N2, He, Ne, Ar, Kr, and Xe.
23 . The apparatus of claim 18 , wherein the halogen-containing gas comprises a hydrogen halide.
24 . The apparatus of claim 18 , wherein the halogen-containing gas comprises hydrogen bromide (HBr).
25 . The apparatus of claim 18 , further comprising:
one or more pressure-regulating devices; and
one or more pumps fluidly coupled with the one or more pressure-regulating devices, wherein the thermal dry development is performed at a first pressure and the plasma dry development is performed at a second pressure that is less than the first pressure.
26 . The apparatus of claim 18 , wherein the controller configured with instructions to perform thermal dry development and plasma dry development is configured with instructions to perform thermal dry development and plasma dry development at a temperature between about −60° C. and about 120° C.
27 . The apparatus of claim 18 , wherein the controller is further configured with instructions to repeat alternatingly the thermal dry development and the plasma dry development.
28 . The apparatus of claim 18 , wherein the plasma dry development is a cyclic plasma dry development, direct plasma dry development, remote plasma dry development, or continuous plasma dry development.
29 . The method of claim 28 , wherein the plasma dry development is continuous plasma dry development, and the continuous plasma dry development is performed at variable power, at constant power and pulsing bias, or at variable power and pulsing bias.