IP Library › Granted Patent US 12,613,770
Granted Patent B2
US 12,613,770 · App. 18/774,787 · Granted Apr 28, 2026

Semiconductor device with user defined operations and associated methods and systems

Inventor: Anthony D. Veches (Boise, ID)
G06F11/1044G06F11/1052G06F11/1056G06F11/1072
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Quick Facts
Patent No.
US 12,613,770
App. No.
18/774,787
Granted
Apr 28, 2026
Kind
B2
Abstract

Memory devices, systems including memory devices, and methods of operating memory devices are described, in which a memory device may select an option for a host device to access a memory array including a first portion configured to store user data and a second portion configured to store different data based on whether an ECC function of the memory device is enabled or disabled—e.g., storing ECC data when the ECC function is enabled, storing additional user data, metadata, or both when the ECC function is disabled. The host device may disable the ECC function and transmit an input to the memory device as to how to access the memory array. The memory device, based on the input, may select the option for the host device to access the memory array and communicate with the host device in accordance with the selected option.

Claims (47)

1 . An apparatus, comprising:

a processor;

memory coupled with the processor; and

instructions stored in the memory and executable by the processor to cause the apparatus to:

receive, at a memory device, a command that disables an error-correcting code (ECC) function of the memory device;

receive, while the ECC function of the memory device is disabled, an access command corresponding to a memory array of the memory device, wherein user data is associated with a first portion of the memory array and a second portion of the memory array stores ECC information associated with the user data; and

access, in response to the access command, at least the second portion of the memory array in accordance with a flag indicating that the memory device is capable of accessing the second portion of the memory array while the ECC function of the memory device is disabled.

2 . The apparatus of claim 1 , wherein to access the memory array, the instructions are further executable by the processor to cause the apparatus to:

retrieve, from the memory array, the user data uncorrected by the ECC function; or

store, in the memory array, the user data without performing the ECC function in accordance with the flag indicating that the memory device is capable of accessing the second portion of the memory array while the ECC function of the memory device is disabled.

3 . The apparatus of claim 1 , wherein the instructions are further executable by the processor to cause the apparatus to:

receive, at the memory device, signaling that indicates the flag indicating that the memory device is capable of accessing the second portion of the memory array while the ECC function of the memory device is disabled.

4 . The apparatus of claim 1 , wherein to access the memory array, the instructions are further executable by the processor to cause the apparatus to:

access, in accordance with a memory address indicated via the access command and a burst length, the first portion of the memory array the second portion of the memory array when the ECC function is disabled, wherein the burst length is associated with the first portion of the memory array and the second portion of the memory array based at least in part on the flag indicating that the memory device is capable of accessing the second portion of the memory array while the ECC function of the memory device is disabled.

5 . The apparatus of claim 1 , wherein to access the memory array, the instructions are further executable by the processor to cause the apparatus to:

access, in accordance with a memory address indicated via one or more second address pins of the memory device, the second portion of the memory array that stores the ECC information associated with the user data when the ECC function is disabled.

6 . The apparatus of claim 1 , wherein the instructions are further executable by the processor to cause the apparatus to:

enable, based at least in part on the flag, one or more second data pins configured to transmit or receive data for the second portion of the memory array, wherein one or more first data pins different than the one or more first data pins are associated with communication of the user data stored in the first portion of the memory array.

7 . The apparatus of claim 1 , wherein the memory device is associated with a second flag indicating that the ECC function of the memory device is disabled.

8 . The apparatus of claim 7 , wherein the flag and the second flag are a same flag.

9 . The apparatus of claim 7 , wherein:

the flag and the second flag are different flags.

10 . A method, comprising:

receiving, at a memory device, a command that disables an error-correcting code (ECC) function of the memory device;

receiving, while the ECC function of the memory device is disabled, an access command corresponding to a memory array of the memory device, wherein user data is associated with a first portion of the memory array and a second portion of the memory array stores ECC information associated with the user data; and

accessing, in response to the access command, at least the second portion of the memory array in accordance with a flag indicating that the memory device is capable of accessing the second portion of the memory array while the ECC function of the memory device is disabled.

11 . The method of claim 10 , wherein accessing the memory array comprises:

retrieving, from the memory array, the user data uncorrected by the ECC function; or

storing, in the memory array, the user data without performing the ECC function in accordance with the flag indicating that the memory device is capable of accessing the second portion of the memory array while the ECC function of the memory device is disabled.

12 . The method of claim 10 , further comprising:

receiving, at the memory device, signaling that indicates the flag indicating that the memory device is capable of accessing the second portion of the memory array while the ECC function of the memory device is disabled.

13 . The method of claim 10 , wherein accessing the memory array comprises:

accessing, in accordance with a memory address indicated via the access command and a burst length, the first portion of the memory array the second portion of the memory array when the ECC function is disabled, wherein the burst length is associated with the first portion of the memory array and the second portion of the memory array based at least in part on the flag indicating that the memory device is capable of accessing the second portion of the memory array while the ECC function of the memory device is disabled.

14 . The method of claim 10 , wherein accessing the memory array comprises:

accessing, in accordance with a memory address indicated via one or more second address pins of the memory device, the second portion of the memory array that stores the ECC information associated with the user data when the ECC function is disabled.

15 . The method of claim 10 , further comprising:

enabling, based at least in part on the flag, one or more second data pins configured to transmit or receive data for the second portion of the memory array, wherein one or more first data pins different than the one or more first data pins are associated with communication of the user data stored in the first portion of the memory array.

16 . The method of claim 10 , wherein the memory device is associated with a second flag indicating that the ECC function of the memory device is disabled.

17 . The method of claim 16 , wherein the flag and the second flag are a same flag.

18 . The method of claim 16 , wherein the flag and the second flag are different flags.

19 . A non-transitory computer-readable medium storing code, the code comprising instructions executable by one or more processors to:

receive, at a memory device, a command that disables an error-correcting code (ECC) function of the memory device;

receive, while the ECC function of the memory device is disabled, an access command corresponding to a memory array of the memory device, wherein user data is associated with a first portion of the memory array and a second portion of the memory array stores ECC information associated with the user data; and

access, in response to the access command, at least the second portion of the memory array in accordance with a flag indicating that the memory device is capable of accessing the second portion of the memory array while the ECC function of the memory device is disabled.

20 . The non-transitory computer-readable medium of claim 19 , wherein the instructions to access the memory array are executable by the one or more processors to:

retrieve, from the memory array, the user data uncorrected by the ECC function; or

store, in the memory array, the user data without performing the ECC function in accordance with the flag indicating that the memory device is capable of accessing the second portion of the memory array while the ECC function of the memory device is disabled.

Continuity (5)
Continuation 18313656 · May 8, 2023
Continuation 17854331 · Jun 30, 2022
Continuation 17214684 · Mar 26, 2021
Continuation 16554958 · Aug 29, 2019
Related Publication 20240370332A1 · Nov 7, 2024
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