IP Library › Granted Patent US 12,648,496
Granted Patent B2
US 12,648,496 · App. 18/637,664 · Granted Jun 2, 2026

Package structure and method of forming the same

Inventors: Hsi-Kuei Cheng (Zhubei, TW); Ching Fu Chang (Taipei, TW); Chih-Kang Han (Hsinchu, TW); Hsin-Chieh Huang (Hsinchu, TW)
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
H01L25/105H01L21/486H01L21/561H01L21/6835H01L21/6836H01L21/78H01L23/49811H01L23/5389H01L25/065H01L25/0652H01L25/0657H01L25/16H01L25/50H01L23/49816H01L23/5383H01L23/5384H01L2221/68331H01L2221/68359H01L2224/48091H01L2224/97H01L2225/0651H01L2225/0652H01L2225/06524H01L2225/06548H01L2225/06555H01L2225/06572H01L2225/1041H01L2225/1058H01L2225/1076H01L2924/15311H01L2924/181
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Quick Facts
Patent No.
US 12,648,496
App. No.
18/637,664
Granted
Jun 2, 2026
Kind
B2
Abstract

An embodiment is a structure including a first package including a first die, and a molding compound at least laterally encapsulating the first die, a second package bonded to the first package with a first set of conductive connectors, the second package comprising a second die, and an underfill between the first package and the second package and surrounding the first set of conductive connectors, the underfill having a first portion extending up along a sidewall of the second package, the first portion having a first sidewall, the first sidewall having a curved portion and a planar portion.

Claims (44)

1 . A structure comprising:

a first package comprising:

a first die; and

a first molding compound encapsulating the first die;

a second package bonded to the first package with a first set of conductive connectors, the second package comprising a second die, a dielectric layer of the first package is disposed at a surface of the first package opposite the second package, the dielectric layer comprises a recess free of any metallic features, and the recess is surrounded by the dielectric layer in a top down view, wherein a lateral surface of the recess in the dielectric layer is curved; and

an underfill between the first package and the second package, the underfill surrounding the first set of conductive connectors, wherein the underfill comprises a curved portion that overlaps the recess.

2 . The structure of claim 1 , wherein the underfill extends along sidewalls of the second package.

3 . The structure of claim 2 , wherein the underfill extends from a top surface of the first package to a top surface of the second package.

4 . The structure of claim 2 , wherein a sidewall of the underfill further comprises:

a linear portion connected to the curved portion, the sidewall of the underfill extending along the sidewalls of the second package.

5 . The structure of claim 4 , wherein the second package further comprises a second molding compound encapsulating the second die, wherein a point where the curved portion adjoins the linear portion is above a bottom surface of the second molding compound.

6 . The structure of claim 1 further comprising:

an integrated passive device (IPD) component bonded to a first redistribution structure, the first redistribution structure being between the IPD component and the first die; and

a second set of conductive connectors bonded to the first redistribution structure.

7 . The structure of claim 1 , wherein the underfill is coterminous with the first package and is wider than the second package.

8 . A package comprising:

a first package comprising a first semiconductor die;

a second package over and bonded to the first package with a first set of conductive connectors, the second package comprising a second semiconductor die laterally encapsulated by a first molding compound; and

an underfill between the first package and the second package and surrounding the first set of conductive connectors, the underfill having a sidewall extending up along a sidewall of the first molding compound of the second package, the sidewall comprises:

a linear portion; and

a curved portion above and adjoined to the linear portion, wherein a point where the curved portion adjoins the linear portion is above a bottom surface of the first molding compound.

9 . The package of claim 8 , wherein the linear portion of the sidewall of the underfill is aligned with an exterior sidewall of the first package.

10 . The package of claim 8 , wherein the first package further comprises a redistribution structure under and electrically connected to the first semiconductor die, and wherein the redistribution structure comprises:

an insulating layer; and

a first recess in the insulating layer.

11 . The package of claim 10 , wherein the insulating layer encircles the first recess in a top down view.

12 . The package of claim 10 , wherein the redistribution structure further comprises:

a second recess in the insulating layer; and

a plurality of contact pads in the insulating layer, the plurality of contact pads being disposed between the first recess and the second recess.

13 . The package of claim 12 further comprising a passive device bonded to the plurality of contact pads.

14 . The package of claim 8 , wherein the curved portion of the underfill is concave.

15 . A structure comprising:

a first redistribution structure comprising metallization patterns in dielectric layers, a bottommost dielectric layer of the dielectric layers has a recess, the recess is bounded on opposing sides by portions of the bottommost dielectric layer, and the recess is free of any metallic features;

a first die over and electrically coupled to the first redistribution structure;

a molding compound encapsulating the first die;

a second redistribution structure over the molding compound;

a semiconductor package over and bonded to the second redistribution structure, the semiconductor package comprising a second die; and

an underfill between the semiconductor package and the second redistribution structure and extending along a sidewall of the semiconductor package, wherein a sidewall of the underfill that is opposite to the semiconductor package comprises:

a curved top portion; and

a bottom portion that is aligned with a sidewall of the first redistribution structure.

16 . The structure of claim 15 , wherein the bottom portion of the sidewall of the underfill that is opposite to the semiconductor package adjoins the curved top portion.

17 . The structure of claim 15 , wherein the bottom portion of the sidewall of the underfill that is opposite to the semiconductor package is further aligned with a sidewall of the molding compound.

18 . The structure of claim 15 , wherein the underfill extends from a top surface of the semiconductor package to the second redistribution structure.

19 . The structure of claim 15 , wherein the bottom portion of the sidewall of the underfill that is opposite to the semiconductor package is linear.

Continuity (5)
Division 17120918 · Dec 14, 2020
Continuation 16050881 · Jul 31, 2018
Division 15366996 · Dec 1, 2016
Provisional Application 62396055 · Sep 16, 2016
Related Publication 20240266336A1 · Aug 8, 2024
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