Analog bitscan techniques in a memory device
The memory device includes a memory block with a plurality of memory cells that are arranged in a plurality of word lines. Circuitry is configured to program at least some of the plurality of memory cells in a program loop or that is configured to erase at least some of the plurality of memory cells in an erase loop. During the program loop or the erase loop, the circuitry is configured to perform a verify operation and an analog bitscan operation. In the analog bitscan operation, the circuitry counts the memory cells that pass or that fail the verify operation. The circuitry is also configured to determine an output of the analog bitscan operation, the output being one of at least three options.
1 . A method of performing an operation in a memory device, comprising the steps of:
preparing a memory block that includes a plurality of memory cells that are arranged in a plurality of word lines;
programming at least some of the plurality of memory cells in a program loop or erasing at least some of the plurality of memory cells in an erase loop;
performing a verify operation;
in an analog bitscan operation, counting the memory cells that pass or that fail the verify operation and comparing the count to only a single threshold; and
determining an output of the analog bitscan operation, the output being one of at least three options.
2 . The method as set forth in claim 1 , wherein the step of programming or erasing at least some of the plurality of memory cells includes performing the program loop on a selected word line of the plurality of word lines.
3 . The method as set forth in claim 1 , wherein the step of programming or erasing at least some of the plurality of memory cells includes performing an erase loop on at least some word lines of the plurality of word lines.
4 . The method as set forth in claim 1 , wherein the analog bitscan operation includes scans of multiple tiers of the plurality of memory cells that are programmed in the program loop or that are erased in the erase loop; and
wherein the output of the analog bitscan operation is determined based on which tier of the multiple tiers is being scanned when the analog bitscan operation is completed.
5 . The method as set forth in claim 1 , wherein the analog bitscan operation includes a scan of multiple tiers of the plurality of memory cells that are programmed in the program loop or that are erased in the erase loop; and
wherein the output of the analog bitscan operation is determined based on a busy time calculation.
6 . The method as set forth in claim 1 , wherein the at least three options include four options, comprising: strong fail, weak fail, weak pass, and strong pass.
7 . The method as set forth in claim 6 , wherein at least one programming parameter in a subsequent program loop or at least one erasing parameter in a subsequent erase loop is adjusted based on the output of the analog bitscan operation.
8 . A memory device, comprising:
a memory block including a plurality of memory cells that are arranged in a plurality of word lines;
circuitry that is configured to program at least some of the plurality of memory cells in a program loop or that is configured to erase at least some of the plurality of memory cells in an erase loop, during the program loop or the erase loop, the circuitry being configured to;
perform a verify operation,
in an analog bitscan operation, count the memory cells that pass or that fail the verify operation and compare the count to only a single threshold, and
determine an output of the analog bitscan operation, the output being one of at least three options.
9 . The memory device as set forth in claim 8 , wherein the circuitry is configured to program the memory cells of a selected word line of the plurality of word lines in the program loop.
10 . The memory device as set forth in claim 8 , wherein the circuitry is configured to erase the memory cells of at least some of the plurality of word lines in the erase loop.
11 . The memory device as set forth in claim 8 , wherein, when performing the analog bitscan operation, the circuitry scans multiple tiers of the plurality of memory cells that are programmed in the program loop or that are erased in the erase loop; and
wherein the output of the analog bitscan operation is determined by the circuitry based on which tier of the multiple tiers is being scanned when the analog bitscan operation is completed.
12 . The memory device as set forth in claim 8 , wherein during the analog bitscan operation, the circuitry scans multiple tiers of the plurality of memory cells that are programmed in the program loop or that are erased in the erase loop; and
wherein the output of the analog bitscan operation from the circuitry is determined based on a busy time calculation.
13 . The memory device as set forth in claim 8 , wherein the at least three options include four options, comprising: strong fail, weak fail, weak pass, and strong pass.
14 . The memory device as set forth in claim 13 , wherein the circuitry adjusts at least one programming parameter in a subsequent program loop or adjusts at least one erasing parameter in a subsequent erase loop based on the output of the analog bitscan operation.
15 . An apparatus, comprising:
a memory block including a plurality of memory cells that are arranged in a plurality of word lines;
a control circuit for programming the memory cells of a selected word line of the plurality of word lines in a plurality of program loops and for erasing the memory cells of at least some of the plurality of word lines in a plurality of erase loops;
an analog bitscan means for counting memory cells that complete programming during the program loops or that complete erasing during the erase loops, the analog bitscan means being configured to compare a count of memory cells that completed programming or that completed erase to only a single threshold and determine an output that is one of at least three options.
16 . The apparatus as set forth in claim 15 , wherein the at least three options that the analog bitscan means is configured to output include strong fail, weak fail, weak pass, and strong pass.
17 . The apparatus as set forth in claim 16 , wherein the control circuit is configured to adjust at least one programming parameter in a subsequent program loop based on the output of the analog bitscan means in a previous program loop.
18 . The apparatus as set forth in claim 16 , wherein the control circuit is configured to adjust at least one erasing parameter in a subsequent erase loop based on the output of the analog bitscan means in a previous erase loop.
19 . The apparatus as set forth in claim 15 , wherein the analog bitscan means scans multiple tiers of the plurality of memory cells that are programmed in the program loop or that are erased in the erase loop; and
wherein the output of the analog bitscan means is determined based on which tier of the multiple tiers is being scanned when an analog bitscan operation is completed.
20 . The apparatus as set forth in claim 15 , wherein during an analog bitscan operation, the analog bitscan means scans multiple tiers of the plurality of memory cells that are programmed in the program loop or that are erased in the erase loop; and
wherein the output of the analog bitscan means is determined based on a busy time calculation.