Cathode assembly for integration of embedded electrostatic chuck (ESC)
Embodiments disclosed herein include an apparatus that includes an electrostatic chuck (ESC). The electrostatic chuck may include a first body that is electrically conductive, and a ceramic insert on the first body with an electrode embedded within the ceramic insert. In an embodiment, the apparatus may further include a facility plate that is coupled to the ESC. The facility plate may include a second body that is electrically conductive with a hole through the second body. In an embodiment, a DC input connector is provided through the hole, and an RF feed line is coupled to the second body. In an embodiment, a pin of the DC input connector is electrically isolated from the RF feed line.
1 . An apparatus, comprising:
an electrostatic chuck (ESC) comprising:
a first body that is electrically conductive; and
a facility plate coupled to the ESC, wherein the facility plate comprises:
a second body that is electrically conductive;
a hole through the second body;
a DC input connector through the hole; and
an RF feed line coupled to the second body, wherein a pin of the DC input connector is electrically isolated from the RF feed line.
2 . The apparatus of claim 1 , wherein the facility plate is electrically coupled to the ESC by one or more links.
3 . The apparatus of claim 1 , wherein the pin of the DC input connector is surrounded by an electrically insulating collar.
4 . The apparatus of claim 1 , wherein the facility plate comprises a fluidic path from a first surface of the second body to a second surface of the second body, wherein the fluidic path comprises a first vertical portion, a horizontal channel, and a second vertical portion.
5 . The apparatus of claim 4 , wherein the horizontal channel comprises a first branch and a second branch that intersects the first branch.
6 . The apparatus of claim 1 , wherein the ESC comprises a first fluidic channel and a second fluidic channel.
7 . The apparatus of claim 6 , wherein the first fluidic channel is an outer zone backside gas channel, and wherein the second fluidic channel is an inner zone backside gas channel.
8 . The apparatus of claim 1 , wherein a diameter of the facility plate is smaller than a diameter of the ESC.
9 . A semiconductor processing tool, comprising:
a chamber suitable for maintaining a vacuum environment within the chamber; and
a cathode assembly within the chamber, wherein the cathode assembly comprises:
an electrostatic chuck (ESC) comprising:
a first body that is electrically conductive; and
a facility plate coupled to the ESC, wherein the facility plate comprises:
a second body that is electrically conductive;
a hole through the second body;
a DC input connector through the hole; and
an RF feed line coupled to the second body, wherein a pin of the DC input connector is electrically isolated from the RF feed line.
10 . The semiconductor processing tool of claim 9 , wherein the semiconductor processing tool is configured for plasma dicing operations.
11 . The semiconductor processing tool of claim 9 , wherein the facility plate comprises a fluidic path with a first vertical portion, a second vertical portion, and a horizontal portion that couples the first vertical portion to the second vertical portion.