Semiconductor package
A semiconductor package includes a lower chip including a first lower bonding pad and a second lower bonding pad, and an upper chip disposed on the lower chip, the upper chip including a first upper bonding pad and a second upper bonding pad respectively hybrid-bonded together. The first lower and upper bonding pads have a first shape in which first and second axis lengths are the same, and are disposed in a first center region of the chips. The second lower and upper bonding pads have a second shape in which third and fourth axis lengths differ, and are disposed in a first edge region which is near a corner point of the chip. In the second lower and upper bonding pads disposed in the first edge region, the third axis length is arranged in a direction perpendicular to a radial direction from the center point.
1 . A semiconductor package comprising:
a lower chip including a lower bonding insulation layer, a first lower bonding pad, and a second lower bonding pad; and
an upper chip disposed on the lower chip, the upper chip including an upper bonding insulation layer, a first upper bonding pad, and a second upper bonding pad respectively hybrid-bonded to the lower bonding insulation layer, the first lower bonding pad, and the second lower bonding pad,
wherein each of the first lower bonding pad and the first upper bonding pad have a first shape in which a first axis length is the same as a second axis length, and the first lower bonding pad and the first upper bonding pad are disposed one-dimensionally or planarily in a first center region which is near a center point of the lower chip and the upper chip,
each of the second lower bonding pad and the second upper bonding pad have a second shape in which a third axis length differs from a fourth axis length, and the second lower bonding pad and the second upper bonding pad are disposed one-dimensionally or planarily in a first edge region which is near a corner point of the lower chip and the upper chip, and the third axis length is greater than the first axis length, and
in the second lower bonding pad and the second upper bonding pad disposed in the first edge region, the third axis length is arranged in a direction perpendicular to a radial direction from the center point.
2 . The semiconductor package of claim 1 , wherein the first shape is a circular shape, and
the second shape is an oval shape.
3 . The semiconductor package of claim 1 , wherein the first shape is a tetragonal shape, and
the second shape is a rectangular shape.
4 . The semiconductor package of claim 1 , wherein a ratio of the fourth axis length to the third axis length is 1:1.5 to 1:15.
5 . The semiconductor package of claim 1 , wherein the second lower bonding pad of the first edge region is partially staggered with respect to the second upper bonding pad of the first edge region.
6 . The semiconductor package of claim 5 , wherein one of the second lower bonding pad and the second upper bonding pad of the first edge region is rotated clockwise or counterclockwise with respect to the center point.
7 . The semiconductor package of claim 5 , wherein one of the second lower bonding pad and the second upper bonding pad of the first edge region is offset in an X direction or a Y direction with respect to the center point.
8 . The semiconductor package of claim 1 , wherein the second lower bonding pad and the second upper bonding pad of the first edge region are vertically and partially staggered.
9 . The semiconductor package of claim 1 , wherein the first lower bonding pad and the first upper bonding pad of the first center region are bonded to each other to form a first hybrid bonding portion,
the second lower bonding pad and the second upper bonding pad of the first edge region are bonded to each other to form a second hybrid bonding portion, and
the lower bonding insulation layer and the upper bonding insulation layer are bonded to each other to form a third hybrid bonding portion.
10 . The semiconductor package of claim 1 , wherein the lower chip further includes a third lower bonding pad and the upper chip further includes a third upper bonding pad,
each of the third lower bonding pad and the third upper bonding pad have the second shape in which the third axis length differs from the fourth axis length, the third lower bonding pad and the third upper bonding pad being disposed one-dimensionally or planarily in a second edge region which is adjacent to edges of the lower chip and the upper chip, and
in the third lower bonding pad and the third upper bonding pad of the second edge region, the third axis length is arranged in an X direction or a Y direction from the center point.
11 . The semiconductor package of claim 1 , wherein the lower chip and the upper chip further comprise a third edge region in which a fourth lower bonding pad and a fourth upper bonding pad each having the second shape in which the third axis length differs from the fourth axis length are disposed, the third edge region being disposed at a perimeter of the first center region and between the first center region and the first edge region, and
the third axis length of the fourth lower bonding pad and the fourth upper bonding pad increases progressively toward the first edge region in the radial direction from the third edge region.
12 . The semiconductor package of claim 1 , wherein the lower chip and the upper chip further comprise a second center region in which a fifth lower bonding pad and a fifth upper bonding pad, each having the first shape in which the first axis length is the same as the second axis length are disposed, the second center region being disposed at a perimeter of the first center region and between the first center region and the first edge region, and
the lower chip and the upper chip further comprise a fourth edge region in which a sixth lower bonding pad and a sixth upper bonding pad, each having the second shape in which the third axis length differs from the fourth axis length are disposed, and the sixth lower bonding pad and the sixth upper bonding pad are disposed at a perimeter of the second center region.
13 . A semiconductor package comprising:
a lower chip including a lower bonding insulation layer, a first lower bonding pad, and a second lower bonding pad; and
an upper chip disposed on the lower chip, the upper chip including an upper bonding insulation layer, a first upper bonding pad, and a second upper bonding pad respectively hybrid-bonded to the lower bonding insulation layer, the first lower bonding pad, and the second lower bonding pad,
wherein the first lower bonding pad and the first upper bonding pad each have a circular shape and are one-dimensionally or planarily arranged in a first center region that is disposed near a center point of the lower chip and the upper chip,
the second lower bonding pad and the second upper bonding pad each having an oval shape are one-dimensionally or planarily arranged in a perpendicular direction, which is perpendicular to a radial direction from the center point, the second lower bonding pad and the second upper bonding pad being disposed in a first edge region that is disposed near corner points of the lower chip and the upper chip, and a long-axis length of the oval shape is greater than a diameter of the circular shape, and
the second lower bonding pad and the second upper bonding pad of the first edge region are arranged to be one-dimensionally or planarily staggered, and partially staggered in the perpendicular direction perpendicular to the radial direction from the center point.
14 . The semiconductor package of claim 13 , wherein the first lower bonding pad and the first upper bonding pad of the first center region are vertically aligned and disposed, and
the second lower bonding pad and the second upper bonding pad of the first edge region are arranged to be vertically and partially staggered.
15 . The semiconductor package of claim 13 , wherein a third lower bonding pad and a third upper bonding pad each having the oval shape are further disposed one-dimensionally or planarily in a second edge region which is adjacent to edges of the lower chip and the upper chip, and
in the third lower bonding pad and the third upper bonding pad of the second edge region, the long-axis length of the oval shape is one-dimensionally or planarily arranged in an X direction or a Y direction from the center point.
16 . The semiconductor package of claim 13 , wherein the lower chip and the upper chip further comprise a third edge region in which a fourth lower bonding pad and a fourth upper bonding pad each having the oval shape are disposed at a perimeter of the first center region and between the first center region and the first edge region, and
the long-axis length of the oval shape of the fourth lower bonding pad and the fourth upper bonding pad increases progressively toward the first edge region in the radial direction from the third edge region.
17 . The semiconductor package of claim 13 , wherein the lower chip and the upper chip further comprise a second center region in which a fifth lower bonding pad and a fifth upper bonding pad each having the circular shape are disposed at a perimeter of the first center region and between the first center region and the first edge region, and
the lower chip and the upper chip further comprise a fourth edge region in which a sixth lower bonding pad and a sixth upper bonding pad each having the oval shape are disposed at a perimeter of the second center region.
18 . A semiconductor package comprising:
a lower chip including a lower bonding insulation layer, a first lower bonding pad, and a second lower bonding pad; and
an upper chip disposed on the lower chip, the upper chip including an upper bonding insulation layer, a first upper bonding pad, and a second upper bonding pad respectively hybrid-bonded to the lower bonding insulation layer, the first lower bonding pad, and the second lower bonding pad,
wherein the first lower bonding pad and the first upper bonding pad each having a tetragonal shape are one-dimensionally or planarily arranged in a first center region that is disposed near a center point of the lower chip and the upper chip,
the second lower bonding pad and the second upper bonding pad each having a rectangular shape are one-dimensionally or planarily arranged in a perpendicular direction, which is perpendicular to a radial direction from the center point, the second lower bonding pad and the second upper bonding pad being disposed in a first edge region that is disposed near corner points of the lower chip and the upper chip, and a long-axis length of the rectangular shape is greater than an axis length of the tetragonal shape, and
the second lower bonding pad and the second upper bonding pad of the first edge region are arranged to be one-dimensionally or planarily staggered, and partially staggered in the perpendicular direction perpendicular to the radial direction from the center point.
19 . The semiconductor package of claim 18 , wherein the lower chip and the upper chip further comprise a third edge region in which a third lower bonding pad and a third upper bonding pad each having the rectangular shape are disposed at a perimeter of the first center region and between the first center region and the first edge region, and
the long-axis length of the rectangular shape of the third lower bonding pad and the third upper bonding pad increases progressively toward the first edge region in the radial direction from the third edge region.
20 . The semiconductor package of claim 18 , wherein the lower chip and the upper chip further comprise a second center region in which a fourth lower bonding pad and a fourth upper bonding pad each having the rectangular shape are disposed at a perimeter of the first center region and between the first center region and the first edge region, and
the lower chip and the upper chip further comprise a fourth edge region in which a fifth lower bonding pad and a fifth upper bonding pad each having the rectangular shape are disposed at a perimeter of the second center region.