Optical error minimization in a semiconductor manufacturing apparatus
Provided are systems and methods for overcoming optical errors occurring from reticle and other hardware usage in a semiconductor fabrication apparatus. The systems and methods minimize optical errors, such as those resulting from gravitational sag on a reticle or mask, for a pattern being projected onto a wafer. The reduced errors allow larger reticles and masks to be used—while maintaining optical accuracy; and also improve optical budget management.
1. A semiconductor fabrication apparatus for producing a photolithographic image on a wafer, the apparatus comprising:
a light source that emits light for transmission onto the wafer;
a reticle that transmits a portion of the light emitted by the light source and produces the photolithographic image; and
means for minimizing optical errors arising from hardware usage in the semiconductor fabrication apparatus wherein the means for minimizing optical errors comprises a reticle construction that includes a non-planar surface configured to compensate for gravitational sag in the reticle while the reticle rests on a reticle stage.
2. The reticle of claim 1 wherein the reticle is constructed with a substantially non-planar surface and wherein said substantially non-planar reticle surface comprises the means for minimizing optical errors by compensating for deformation resulting from gravitational sag.
3. The reticle of claim 2 wherein the reticle is constructed with an upward arc that compensates for deformation resulting from gravitational sag.
4. The reticle of claim 2 wherein the substantially non-planar reticle surface is achieved by polishing the surface to obtain the substantially non-planar reticle surface.
5. The reticle of claim 4 wherein the substantially non-planar reticle surface is achieved by molding the reticle surface to obtain the substantially non-planar reticle surface.
6. The reticle of claim 2 wherein the substantially non-planar reticle surface includes a curved top surface of the reticle.
7. The reticle of claim 2 wherein the substantially non-planar reticle surface includes a curved bottom surface of the reticle.
8. The reticle of claim 2 wherein both a top surface and a bottom surface of the reticle comprise substantially non-planar reticle surfaces.
9. The reticle of claim 2 wherein the semiconductor fabrication apparatus includes an upper chamber and a lower chamber which are separated by the reticle and a seal and wherein a differential pressure is generated across the reticle achieved by one of raising and lowering a pressure in one of the lower chamber and the upper chamber thereby inducing a deformation in the reticle to compensate for the effects of gravitational sag in the reticle thereby reducing optical errors in an image projected on the wafer by the reticle.
10. The reticle of claim 1 wherein the retical construction includes a reticle having a substantially non-planar reticle top surface and a substantially planar reticle bottom surface, the surfaces being configured to compensate for gravitational sag in the reticle while the reticle rests on the reticle stage.
11. The reticle of claim 1 wherein the retical construction includes a reticle having a substantially non-planar reticle bottom surface and a substantially planar reticle top surface, the surfaces being configured to compensate for gravitational sag in the reticle while the reticle rests on the reticle stage.
12. A semiconductor fabrication apparatus for producing a photolithographic image on a wafer, the apparatus comprising:
a light source that emits light for transmission onto the wafer;
a reticle that transmits a portion of the light emitted by the light source and produces the photolithographic image; and
means for minimizing optical errors arising from hardware usage in the semiconductor fabrication apparatus wherein the means for minimizing optical errors comprises a pellicle bonded to the reticle such that the combined reticle and pellicle structure minimizes any optical errors for the image projected on the wafer by the reticle.
13. The semiconductor fabrication apparatus of claim 12 wherein the pellicle increases the aggregate stiffness of the combined reticle and pellicle structure.
14. The semiconductor fabrication apparatus of claim 12 wherein the pellicle includes a transparent membrane and an outer frame along an outer portion of the reticle wherein the outer frame of the pellicle increases the aggregate stiffness of the combined reticle and pellicle structure.
15. The semiconductor fabrication apparatus of claim 14 wherein the pellicle frame is configured to apply a torque to the reticle to offset the effects of gravitational sag in the reticle.
16. A semiconductor fabrication apparatus for producing a photolithographic image on a wafer, the apparatus comprising:
a light source that emits light for transmission onto the wafer;
a reticle that transmits a portion of the light emitted by the light source and produces the photolithographic image;
means for minimizing optical errors arising from hardware usage in the semiconductor fabrication apparatus wherein the means for minimizing optical errors comprises a pressure regulation system within the semiconductor fabrication apparatus that provides a differential pressure across the reticle, wherein the differential pressure minimizes any optical errors for the image projected on the wafer by the reticle; and
wherein the operation of the pressure regulation system is monitored and controlled using feedback from an interferometric monitoring system.
17. A semiconductor fabrication apparatus for producing a photolithographic image on a wafer, the apparatus comprising:
a light source that emits light for transmission onto the wafer;
a reticle that transmits a portion of the light emitted by the light source and produces the photolithographic image;
means for minimizing optical errors arising from hardware usage in the semiconductor fabrication apparatus wherein the means for minimizing optical errors comprises a pressure regulation system within the semiconductor fabrication apparatus that provides a differential pressure across the reticle, wherein the differential pressure minimizes any optical errors for the image projected on the wafer by the reticle; and
wherein the pressure regulation system includes an upper sealed chamber and a lower sealed chamber separated by the reticle and by a seal configured to enable pressure regulation system to provide a differential pressure across the reticle, wherein the differential pressure enables the correction of gravitational sag in the reticle.
18. The semiconductor fabrication apparatus of claim 17 wherein the operation of the pressure regulation system is monitored and controlled using feedback from an interferometric monitoring system.