Semiconductor device and method of singulating semiconductor wafer along modified region within non-active region formed by irradiating energy through mounting tape
View Patent ↗A semiconductor device has a semiconductor wafer with a plurality of semiconductor die separated by a non-active region. The semiconductor die can be circular or polygonal with three or more sides. A plurality of bumps is formed over the semiconductor die. A portion of semiconductor wafer is removed to thin the semiconductor wafer. A wafer ring is mounted to mounting tape. The semiconductor wafer is mounted to the mounting tape within the wafer ring. The mounting tape includes translucent or transparent material. A penetrable layer is applied over the bumps formed over the semiconductor wafer. An irradiated energy from a laser is applied through the mounting tape to the non-active region to form a modified region within the non-active region. The semiconductor wafer is singulated along the modified region to separate the semiconductor die.
1. A method of making a semiconductor device, comprising:
providing a semiconductor wafer having a plurality of semiconductor die separated by a non-active region;
forming a plurality of bumps over the semiconductor die;
providing a mounting tape;
disposing the semiconductor wafer over the mounting tape;
disposing a penetrable layer over the bumps formed over the semiconductor wafer;
applying irradiated energy to the non-active region through the mounting tape for form a modified region within the non-active region; and
singulating the semiconductor wafer along the modified region to separate the semiconductor die.
2. The method of claim 1 , further including:
providing a wafer ring;
mounting the wafer ring to the mounting tape; and
mounting the semiconductor wafer to the mounting tape within the wafer ring.
3. The method of claim 1 , further including:
providing a laser; and
applying the irradiated energy from the laser through the mounting tape to form the modified region within the non-active region.
4. The method of claim 1 , wherein the mounting tape includes translucent or transparent material.
5. The method of claim 1 , wherein the semiconductor die have a polygon shape with three or more sides.
6. The method of claim 1 , further including removing a portion of semiconductor wafer to thin the semiconductor wafer.
7. A method of making a semiconductor device, comprising:
providing a semiconductor wafer;
providing a mounting tape;
disposing the semiconductor wafer over the mounting tape;
providing a laser;
forming a modified region within a non-active region of the semiconductor wafer by applying irradiated energy from the laser through the mounting tape; and
singulating the semiconductor wafer along the modified region.
8. The method of claim 7 , further including:
providing a wafer ring;
mounting the wafer ring to the mounting tape; and
mounting the semiconductor wafer to the mounting tape within the wafer ring.
9. The method of claim 7 , further including applying a force to the mounting tape to expand the mounting tape and exert stress along the modified region to singulate the semiconductor wafer.
10. The method of claim 7 , wherein the mounting tape includes translucent or transparent material.
11. The method of claim 7 , further including forming the modified region as a plurality of vertically stacked modified regions.
12. The method of claim 7 , further including:
forming a plurality of bumps over the semiconductor wafer; and
applying a penetrable layer over the bumps formed over the semiconductor wafer.
13. The method of claim 12 , further including:
singulating the semiconductor wafer along the modified region to separate the semiconductor wafer into a plurality of semiconductor die; and
forming an encapsulant over the semiconductor die and bumps.
14. A method of making a semiconductor device, comprising:
providing a semiconductor wafer;
providing a mounting tape;
disposing the semiconductor wafer over the mounting tape;
applying energy to a non-active region of the semiconductor wafer through the mounting tape to form a modified region within the non-active region; and
singulating the semiconductor wafer along the modified region.
15. The method of claim 14 , further including:
providing a wafer ring;
mounting the wafer ring to the mounting tape; and
mounting the semiconductor wafer to the mounting tape within the wafer ring.
16. The method of claim 14 , further including:
providing a laser; and
applying irradiated energy from the laser through the mounting tape to form the modified region within the non-active region.
17. The method of claim 14 , wherein the mounting tape includes translucent or transparent material.
18. The method of claim 14 , further including applying a force to the mounting tape to expand the mounting tape and exert stress along the modified region to singulate the semiconductor wafer.
19. The method of claim 14 , further including:
forming a plurality of bumps over the semiconductor wafer; and
applying a penetrable layer over the bumps formed over the semiconductor wafer.
20. The method of claim 19 , further including:
singulating the semiconductor wafer along the modified region to separate the semiconductor wafer into a plurality of semiconductor die; and
forming an encapsulant over the semiconductor die and bumps.
21. A method of making a semiconductor device, comprising:
forming a modified region of a semiconductor wafer by application of energy through a mounting tape disposed over the semiconductor wafer; and
singulating the semiconductor wafer along the modified region.
22. The method of claim 21 , wherein singulating the semiconductor wafer further includes applying a force to the mounting tape to expand the mounting tape and exert stress along the modified region.
23. The method of claim 21 , further including:
forming a bump over the semiconductor wafer; and
applying a penetrable layer over the bump.
24. The method of claim 21 , further including forming the modified region as a plurality of vertically stacked modified regions.