Semiconductor device and method for forming openings and trenches in insulating layer by first LDA and second LDA for RDL formation
View Patent ↗A semiconductor device has a semiconductor die with an encapsulant deposited over the semiconductor die. A first insulating layer having high tensile strength and elongation is formed over the semiconductor die and encapsulant. A first portion of the first insulating layer is removed by a first laser direct ablation to form a plurality of openings in the first insulating layer. The openings extend partially through the first insulating layer or into the encapsulant. A second portion of the first insulating layer is removed by a second laser direct ablation to form a plurality of trenches in the first insulating layer. A conductive layer is formed in the openings and trenches of the first insulating layer. A second insulating layer is formed over the conductive layer. A portion of the second insulating layer is removed by a third laser direct ablation. Bumps are formed over the conductive layer.
1. A method of making a semiconductor device, comprising:
providing a semiconductor die;
depositing an encapsulant over the semiconductor die;
forming a first insulating layer over a surface of the semiconductor die and the encapsulant;
removing a first portion of the first insulating layer by a first laser direct ablation to form a first opening and a second opening in the first insulating layer with the second opening outside a footprint of the semiconductor die;
removing a second portion of the first insulating layer by a second laser direct ablation to form a trench in the first insulating layer;
forming a conductive layer in the trench that extends from the first opening to the second opening;
forming a second insulating layer over the conductive layer; and
forming a plurality of bumps over the conductive layer.
2. The method of claim 1 , further including removing a portion of the second insulating layer by a third laser direct ablation.
3. The method of claim 1 , further including forming the second opening partially through the first insulating layer or into the encapsulant.
4. The method of claim 1 , further including forming a third insulating layer over the semiconductor die.
5. The method of claim 1 , further including removing a portion of the encapsulant.
6. The method of claim 1 , wherein the first insulating layer includes a tensile strength greater than 50 MPa, elongation greater than 40% at room temperature, and elongation greater than 15% at −55° C.
7. A method of making a semiconductor device, comprising:
providing a semiconductor die;
depositing an encapsulant over the semiconductor die;
forming a first insulating layer over a surface of the semiconductor die and the encapsulant;
removing a first portion of the first insulating layer to form a first opening and a second opening in the first insulating layer;
removing a second portion of the first insulating layer to form a trench in the first insulating layer from the first opening to the second opening;
forming a conductive layer over the first insulating layer; and
forming a second insulating layer over the conductive layer.
8. The method of claim 7 , further including:
removing the first portion of the first insulating layer by a first laser direct ablation to form the first and second openings in the first insulating layer; and
removing the second portion of the first insulating layer by a second laser direct ablation to form the trench in the first insulating layer.
9. The method of claim 7 , further including forming a third insulating layer over the semiconductor die.
10. The method of claim 7 , further including removing a portion of the second insulating layer by a laser direct ablation.
11. The method of claim 7 , further including forming the second opening partially through the first insulating layer or into the encapsulant.
12. The method of claim 7 , further including removing a portion of the encapsulant.
13. The method of claim 7 , wherein the first insulating layer includes a tensile strength greater than 50 MPa, elongation greater than 40% at room temperature, and elongation greater than 15% at −55° C.
14. A method of making a semiconductor device, comprising:
providing a semiconductor die;
depositing an encapsulant over the semiconductor die;
forming a first insulating layer over a surface of the semiconductor die and the encapsulant;
forming a first opening in the first insulating layer outside a footprint of the semiconductor die; forming a second opening in the first insulating layer; forming a trench in the first insulating layer extending from the first opening to the second opening;
forming a conductive layer in the first opening, second opening, and trench of the first insulating layer.
15. The method of claim 14 , further including:
removing a first portion of the first insulating layer by a first laser direct ablation to form the first opening and second opening in the first insulating layer; and
removing a second portion of the first insulating layer by a second laser direct ablation to form the trench in the first insulating layer.
16. The method of claim 14 , further including forming a second insulating layer over the semiconductor die.
17. The method of claim 14 , further including:
forming a second insulating layer over the conductive layer; and
removing a portion of the second insulating layer by a laser direct ablation.
18. The method of claim 14 , further including forming the second opening partially through the first insulating layer or into the encapsulant.
19. The method of claim 14 , further including removing a portion of the encapsulant.
20. The method of claim 14 , wherein the first insulating layer includes a tensile strength greater than 50 MPa, elongation greater than 40% at room temperature, and elongation greater than 15% at −55° C.
21. A method of making a semiconductor device, comprising:
providing a semiconductor die;
forming a first insulating layer over the semiconductor die;
forming an opening in the first insulating layer outside a footprint of the semiconductor die; forming a trench in the first insulating layer extending from the opening to the footprint of the semiconductor die
forming a conductive layer in the opening and trench.
22. The method of claim 21 , further including:
removing a first portion of the first insulating layer by a first laser direct ablation to form the opening in the first insulating layer; and
removing a second portion of the first insulating layer by a second laser direct ablation to form the trench in the first insulating layer.
23. The method of claim 21 , further including:
forming a second insulating layer over the conductive layer; and
removing a portion of the second insulating layer by a laser direct ablation.
24. The method of claim 21 , further including forming a second insulating layer over the semiconductor die.
25. The method of claim 21 , further including:
depositing an encapsulant over the semiconductor die; and
forming the opening partially through the first insulating layer or into the encapsulant.
26. The method of claim 25 , further including removing a portion of the encapsulant.
27. The method of claim 21 , wherein a surface of the conductive layer is above a surface of the first insulating layer.
28. The method of claim 21 , wherein a surface of the conductive layer is below a surface of the first insulating layer.
29. The method of claim 24 , further including forming a third insulating layer over the second insulating layer.
30. The method of claim 14 , wherein a surface of the conductive layer is above a surface of the first insulating layer.
31. The method of claim 14 , wherein a surface of the conductive layer is below a surface of the first insulating layer.
32. The method of claim 16 , further including forming a third insulating layer over the second insulating layer.