Semiconductor device with cross-talk isolation using M-cap
A semiconductor device is made by forming an oxide layer over a substrate and forming a first conductive layer over the oxide layer. The first conductive layer is connected to ground. A second conductive layer is formed over the first conductive layer as a plurality of segments. A third conductive layer is formed over the second conductive layer as a plurality of segments. If the conductive layers are electrically isolated, then a conductive via is formed through these layers. A first segment of the third conductive layer operates as a first passive circuit element. A second segment operates as a second passive circuit element. A third segment is connected to ground and operates as a shield disposed between the first and second segments. The shield has a height at least equal to a height of the passive circuit elements to block cross-talk between the passive circuit elements.
1. A method of making a semiconductor device, comprising:
providing a substrate;
forming a passive circuit over the substrate; and
forming a shielding layer over the substrate adjacent to the passive circuit by,
(a) forming a first conductive layer over the substrate, and
(b) forming a second conductive layer with a major surface of the second conductive layer contacting a major surface of the first conductive layer.
2. The method of claim 1 , wherein the shielding layer includes a height at least a height of the passive circuit.
3. The method of claim 1 , wherein forming the passive circuit includes:
forming a third conductive layer over the substrate; and
forming a fourth conductive layer over the third conductive layer.
4. The method of claim 1 , further including forming a conductive via through the first conductive layer and second conductive layer.
5. The method of claim 1 , wherein the passive circuit is selected from the group consisting of a resistor, inductor, capacitor, and signal trace.
6. A method of making a semiconductor device, comprising:
providing a substrate;
forming an M-cap layer over the substrate;
forming a passive circuit over the substrate; and
forming a shielding layer over the M-cap layer adjacent to the passive circuit by,
(a) forming a first conductive layer over the M-cap layer,
(b) forming a second conductive layer contacting the first conductive layer, and
(c) forming a conductive via through the M-cap layer, first conductive layer, and second conductive layer.
7. The method of claim 6 , wherein the shielding layer includes a height at least a height of the passive circuit.
8. The method of claim 6 , wherein forming the passive circuit includes:
forming a third conductive layer over the substrate; and
forming a fourth conductive layer over the third conductive layer.
9. The method of claim 6 , wherein the passive circuit is selected from the group consisting of a resistor, inductor, capacitor, and signal trace.
10. A semiconductor device, comprising:
a substrate;
a passive circuit formed over the substrate; and
a shielding layer formed over the substrate adjacent to the passive circuit, the shielding layer including,
(a) a first conductive layer formed over the substrate, and
(b) a second conductive layer with a major surface of the second conductive layer contacting a major surface of the first conductive layer.
11. The semiconductor device of claim 10 , wherein the shielding layer includes a height at least a height of the passive circuit.
12. The semiconductor device of claim 10 , wherein the passive circuit includes:
a third conductive layer formed over the substrate; and
a fourth conductive layer formed over the third conductive layer.
13. The semiconductor device of claim 10 , further including a conductive via formed through the first conductive layer and second conductive layer.
14. A semiconductor device, comprising:
a substrate;
an M-cap layer formed over the substrate;
a passive circuit formed over the substrate; and
a shielding layer formed over the M-cap layer adjacent to the passive circuit, the shielding layer including,
(a) a first conductive layer formed over the M-cap layer,
(b) a second conductive layer contacting a surface of the first conductive layer, and
(c) a conductive via formed through the first conductive layer and second conductive layer.
15. The semiconductor device of claim 14 , wherein the shielding layer includes a height at least a height of the passive circuit.
16. The semiconductor device of claim 14 , wherein the passive circuit includes:
a third conductive layer formed over the substrate; and
a fourth conductive layer formed over the third conductive layer.
17. A semiconductor device, comprising:
a substrate;
a passive circuit formed over the substrate; and
a shielding layer formed over the substrate adjacent to the passive circuit, the shielding layer including,
(a) a first conductive layer formed over the substrate,
(b) a second conductive layer formed over the first conductive layer, and
(c) a conductive via formed through the first conductive layer and second conductive layer.
18. The semiconductor device of claim 17 , wherein the passive circuit includes:
a third conductive layer formed over the substrate; and
a fourth conductive layer formed over the third conductive layer.
19. The semiconductor device of claim 17 , further including an insulating layer formed between the first conductive layer and second conductive layer.
20. The semiconductor device of claim 17 , wherein the passive circuit is selected from the group consisting of a resistor, inductor, capacitor, and signal trace.