Semiconductor device and method of forming protective coating over interconnect structure to inhibit surface oxidation
A semiconductor device has a semiconductor die with a first conductive layer formed over the semiconductor die. A first insulating layer is formed over the semiconductor die with a first opening in the first insulating layer disposed over the first conductive layer. A second conductive layer is formed over the first insulating layer and into the first opening over the first conductive layer. An interconnect structure is formed over the first and second conductive layers within openings of a second insulating layer. The second insulating layer is removed. The interconnect structure can be a conductive pillar or conductive pad. A bump material can be formed over the conductive pillar. A protective coating is formed over the conductive pillar or pad to a thickness less than one micrometer to reduce oxidation. The protective coating is formed by immersing the conductive pillar or pad into the bath containing tin or indium.
1. A semiconductor device, comprising:
a semiconductor die;
a first insulating layer formed in contact with the semiconductor die;
a first conductive layer formed in contact with the first insulating layer;
a second insulating layer formed in contact with the first insulating layer and first conductive layer;
a second conductive layer formed in contact with the second insulating layer and first conductive layer;
a copper pillar formed in contact with the second conductive layer;
a bump material formed in direct contact with the copper pillar; and
a protective coating consisting of indium formed in contact with the copper pillar and bump material.
2. The semiconductor device of claim 1 , wherein the protective coating includes a thickness of less than one micrometer.
3. The semiconductor device of claim 1 , wherein the protective coating includes an intermetallic cover formed over the copper pillar and bump material.
4. The semiconductor device of claim 1 , further including a substrate, wherein the semiconductor is bonded to the substrate with the bump material.
5. A semiconductor device, comprising:
a semiconductor die;
a first insulating layer formed in contact with the semiconductor die;
a first conductive layer formed in contact with the first insulating layer;
a second insulating layer formed in contact with the first insulating layer and first conductive layer;
a second conductive layer formed in contact with the second insulating layer and first conductive layer;
a copper pillar formed in contact with the second conductive layer;
a bump material formed in direct contact with the copper pillar; and
a protective coating formed in contact with the copper pillar and bump material.
6. The semiconductor device of claim 5 , wherein the protective coating consists of indium.
7. The semiconductor device of claim 5 , wherein the protective coating includes a thickness of less than one micrometer.
8. The semiconductor device of claim 5 , wherein the protective coating includes an intermetallic cover formed over the copper pillar and bump material.
9. The semiconductor device of claim 5 , further including a substrate, wherein the semiconductor is bonded to the substrate with the bump material.
10. A semiconductor device, comprising:
a semiconductor die;
a first conductive layer formed over the semiconductor die;
a copper pillar formed over the first conductive layer; and
a protective coating consisting of indium formed in contact with the copper pillar.
11. The semiconductor device of claim 10 , wherein the protective coating includes a thickness of less than one micrometer.
12. The semiconductor device of claim 10 , wherein the protective coating includes an intermetallic cover formed over the copper pillar.
13. The semiconductor device of claim 10 , further including:
a first insulating layer formed over the semiconductor die, wherein the first conductive layer is formed in contact with the first insulating layer;
a second insulating layer formed in contact with the first insulating layer and first conductive layer; and
a second conductive layer formed in contact with the second insulating layer and first conductive layer, wherein the copper pillar is formed in contact with the second conductive layer.
14. The semiconductor device of claim 10 , further including a bump material formed in direct contact with the copper pillar.
15. The semiconductor device of claim 14 , further including a substrate, wherein the semiconductor is bonded to the substrate with the bump material.
16. A semiconductor device, comprising:
a semiconductor die;
a first conductive layer formed over the semiconductor die;
a copper pillar formed over the first conductive layer;
a bump material formed in direct contact with the copper pillar; and
a protective coating formed on the copper pillar and bump material.
17. The semiconductor device of claim 16 , wherein the protective coating includes an intermetallic cover formed over the first conductive layer.
18. The semiconductor device of claim 16 , wherein the protective coating includes tin or indium.
19. The semiconductor device of claim 16 , wherein the protective coating includes a thickness of less than one micrometer.
20. The semiconductor device of claim 16 , further including:
a first insulating layer formed over the semiconductor die, wherein the first conductive layer is formed in contact with the first insulating layer;
a second insulating layer formed in contact with the first insulating layer and first conductive layer; and
a second conductive layer formed in contact with the second insulating layer and first conductive layer, wherein the copper pillar is formed in contact with the second conductive layer.
21. The semiconductor device of claim 16 , further including a substrate, wherein the semiconductor is bonded to the substrate with the bump material.