Semiconductor device and method of forming interconnect structure and mounting semiconductor die in recessed encapsulant
A semiconductor device has conductive pillars formed over a carrier. A first semiconductor die is mounted over the carrier between the conductive pillars. An encapsulant is deposited over the first semiconductor die and carrier and around the conductive pillars. A recess is formed in a first surface of the encapsulant over the first semiconductor die. The recess has sloped or stepped sides. A first interconnect structure is formed over the first surface of the encapsulant. The first interconnect structure follows a contour of the recess in the encapsulant. The carrier is removed. A second interconnect structure is formed over a second surface of the encapsulant and first semiconductor die. The first and second interconnect structures are electrically connected to the conductive pillars. A second semiconductor die is mounted in the recess. A third semiconductor die is mounted over the recess and second semiconductor die.
1. A method of making a semiconductor device, comprising:
providing a substrate;
forming an insulating layer over the substrate;
forming a recess in a first surface of the insulating layer;
forming a first interconnect structure in the recess and over the substrate;
disposing a first semiconductor die in the recess electrically connected to the first interconnect structure; and
disposing a second semiconductor die over the recess and first semiconductor die.
2. The method of claim 1 , further including providing a conductive pillar through the insulating layer.
3. The method of claim 1 , further including forming a conductive via through the substrate.
4. The method of claim 1 , further including forming the first interconnect structure to follow a contour of the recess.
5. The method of claim 1 , wherein the recess includes sloped or stepped sidewalls.
6. The method of claim 1 , further including forming a second interconnect structure over a second surface of the insulating layer opposite the first surface of the insulating layer.
7. A method of making a semiconductor device, comprising:
providing a substrate;
forming an insulating layer over the substrate;
forming a recess in a first surface of the insulating layer;
forming a first interconnect structure in the recess; and
disposing a first semiconductor die in the recess.
8. The method of claim 7 , further including disposing a second semiconductor die over the recess.
9. The method of claim 7 , further including providing a conductive pillar through the insulating layer.
10. The method of claim 7 , further including forming a conductive via through the substrate.
11. The method of claim 7 , further including forming the first interconnect structure to follow a contour of the recess.
12. The method of claim 7 , wherein the recess includes sloped or stepped sidewalls.
13. The method of claim 7 , further including forming a second interconnect structure over a second surface of the insulating layer opposite the first surface of the insulating layer.
14. A semiconductor device, comprising:
a substrate;
an insulating layer formed over the substrate with a recess in a first surface of the insulating layer;
a first interconnect structure formed in the recess;
a first semiconductor die disposed in the recess; and
a second semiconductor die disposed over the recess and first semiconductor die.
15. The semiconductor device of claim 14 , further including a conductive pillar through the insulating layer.
16. The semiconductor device of claim 14 , further including a conductive via formed through the substrate.
17. The semiconductor device of claim 14 , wherein the first semiconductor die is electrically coupled to the first interconnect structure.
18. The semiconductor device of claim 14 , wherein the recess includes sloped or stepped sidewalls.
19. The semiconductor device of claim 14 , further including a second interconnect structure formed over a second surface of the insulating layer opposite the first surface of the insulating layer.
20. A semiconductor device, comprising:
a substrate;
an insulating layer formed over the substrate with a recess in a first surface of the insulating layer;
a first interconnect structure formed in the recess; and
a first semiconductor die disposed in the recess.
21. The semiconductor device of claim 20 , further including a second semiconductor die disposed over the recess.
22. The semiconductor device of claim 20 , further including a conductive pillar through the insulating layer.
23. The semiconductor device of claim 20 , further including a conductive via formed through the substrate.
24. The semiconductor device of claim 20 , wherein the recess includes sloped or stepped sidewalls.
25. The semiconductor device of claim 20 , further including a second interconnect structure formed over a second surface of the insulating layer opposite the first surface of the insulating layer.