Chemical-mechanical planarization of polymer films
The invention provides a chemical-mechanical polishing composition and a method of chemically-mechanically polishing a substrate with the chemical-mechanical polishing composition. The polishing composition comprises (a) abrasive particles that comprise ceria, zirconia, silica, alumina, or a combination thereof, (b) a metal ion that is a Lewis Acid, (c) a ligand that is an aromatic carboxylic acid, an aromatic sulfonic acid, an aromatic acid amide, an amino acid, or a hydroxy-substituted N-heterocycle, and (d) an aqueous carrier, wherein the pH of the chemical-mechanical polishing composition is in the range of about 1 to about 4.
1. A chemical-mechanical polishing composition comprising:
(a) abrasive particles that comprise ceria,
(b) a metal ion that is a Lewis Acid,
(c) a ligand that is an aromatic carboxylic acid, an aromatic sulfonic acid, an aromatic acid amide, or a hydroxy-substituted N heterocycle, and
(d) an aqueous carrier,
wherein the pH of the chemical-mechanical polishing composition is in the range of about 2 to about 3 and wherein the molar concentration ratio of the metal ion to the ligand is about 1:about 2.
2. The chemical-mechanical polishing composition of claim 1 , wherein the abrasive particles consist of ceria, and the chemical-mechanical polishing composition does not comprise other abrasive particles.
3. The chemical-mechanical polishing composition of claim 1 , wherein the metal ion is Fe 3+ , Al 3+ , Cu 2+ , Zn 2+ , or a combination thereof.
4. The chemical-mechanical polishing composition of claim 3 , wherein the metal ion is Fe 3+ .
5. The chemical-mechanical polishing composition of claim 3 , wherein the metal ion is Al 3+ .
6. The chemical-mechanical polishing composition of claim 1 , wherein the ligand is picolinic acid, isonicotinic acid, nicotinic acid, pyridinedicarboxylic acid, pyridine sulfonic acid, p-toluenesulfonic acid, salicylamide, aniline sulfonic acid, phenylglycine, aminobenzoic acid, pipecolinic acid, 2 hydroxypyridine, 8 hydroxyquinoline, 2-hydroxyquinoline, or a combination thereof.
7. The chemical-mechanical polishing composition of claim 6 , wherein the ligand is picolinic acid.
8. The chemical-mechanical polishing composition of claim 1 , wherein the chemical-mechanical polishing composition does not contain a peroxy-type oxidizer.
9. The chemical-mechanical polishing composition of claim 1 , wherein the chemical-mechanical polishing composition comprises abrasive particles at a total concentration of about 0.01 wt. % to about 1 wt. %.
10. The chemical-mechanical polishing composition of claim 9 , wherein the chemical-mechanical polishing composition comprises abrasive particles at a total concentration of about 0.01 wt. % to about 0.05 wt. %.
11. The chemical-mechanical polishing composition of claim 1 , wherein the chemical-mechanical polishing composition comprises one or more metal ions that are Lewis Acids at a total concentration of about 0.05 mM to about 50 mM.
12. The chemical-mechanical polishing composition of claim 1 , wherein the chemical-mechanical polishing composition comprises one or more ligands that are aromatic carboxylic acids, aromatic sulfonic acids, aromatic acid amides, or hydroxy-substituted N heterocycles at a total concentration of about 0.1 mM to about 100 mM.
13. A method of polishing a substrate comprising:
(i) providing a substrate;
(ii) providing a polishing pad;
(iii) providing the chemical-mechanical polishing composition of claim 1 ;
(iv) contacting the substrate with the polishing pad and the chemical-mechanical polishing composition; and
(v) moving the polishing pad and the chemical-mechanical polishing composition relative to the substrate to abrade at least a portion of the substrate to polish the substrate.