Vertical topology light emitting device
A vertical topology light emitting device can include a conductive support structure; an adhesion layer disposed on the conductive support structure; a p-type contact disposed on the adhesion layer; a GaN-based semiconductor structure disposed on the p-type contact, in which the GaN-based semiconductor structure includes an n-type GaN-based layer, a p-type GaN-based layer, and an active layer between the n-type GaN-based layer and the p-type GaN-based layer, in which the n-type GaN-based layer has an etched flat surface, and the GaN-based semiconductor structure includes a bottom surface proximate to the conductive support structure, a top surface opposite to the bottom surface, and a side surface between the top surface and the bottom surface; an interface layer on the GaN-based semiconductor structure; and a contact pad disposed on the interface layer, in which the interface layer includes a portion which directly contacts the etched flat surface of the n-type GaN-based layer, and a first thickness of the conductive support structure is 0.5 times less than a width of the top surface of the GaN-based semiconductor structure.
1. A vertical topology light emitting device, comprising:
a conductive support structure;
an adhesion layer disposed on the conductive support structure;
a p-type contact disposed on the adhesion layer;
a GaN-based semiconductor structure disposed on the p-type contact, wherein the GaN-based semiconductor structure comprises an n-type GaN-based layer, a p-type GaN-based layer, and an active layer between the n-type GaN-based layer and the p-type GaN-based layer, wherein the n-type GaN-based layer has an etched flat surface, and wherein the GaN-based semiconductor structure includes a bottom surface proximate to the conductive support structure, a top surface opposite to the bottom surface, and a side surface between the top surface and the bottom surface;
an interface layer on the GaN-based semiconductor structure; and
a contact pad disposed on the interface layer,
wherein the interface layer comprises a portion which directly contacts the etched flat surface of the n-type GaN-based layer, and
wherein a first thickness of the conductive support structure is 0.5 times less than a width of the top surface of the GaN-based semiconductor structure.
2. The vertical topology light emitting device according to claim 1 , wherein the conductive support structure comprises Cu, Au, or Al.
3. The vertical topology light emitting device according to claim 1 , wherein the adhesion layer comprises Cr and Au.
4. The vertical topology light emitting device according to claim 1 , wherein the etched flat surface is n-GaN.
5. The vertical topology light emitting device according to claim 1 , wherein the interface layer comprises Al.
6. The vertical topology light emitting device according to claim 1 , wherein the contact pad comprises Cr and Au.
7. The vertical topology light emitting device according to claim 1 , wherein the adhesion layer comprises a first adhesion layer and a second adhesion layer.
8. The vertical topology light emitting device according to claim 7 , wherein the first adhesion layer comprises Au.
9. The vertical topology light emitting device according to claim 1 , wherein the p-type contact includes a transparent contact.
10. The vertical topology light emitting device according to claim 1 , wherein the p-type contact includes a reflective contact.
11. The vertical topology light emitting device according to claim 1 , wherein a second thickness of the GaN-based semiconductor structure from the bottom surface to the top surface is less than 5 micrometers.
12. A vertical topology light emitting device, comprising:
a conductive support structure;
an adhesion layer disposed on the conductive support structure;
a p-type contact disposed on the adhesion layer;
a GaN-based semiconductor structure disposed on the p-type contact, wherein the GaN-based semiconductor structure comprises an n-type GaN-based layer, a p-type GaN-based layer, and an active layer between the n-type GaN-based layer and the p-type GaN-based layer, wherein the n-type GaN-based layer has an etched flat surface, and wherein the GaN-based semiconductor structure includes a bottom surface proximate to the conductive support structure, a top surface opposite to the bottom surface, and a side surface between the top surface and the bottom surface;
an interface layer on the GaN-based semiconductor structure; and
a contact pad disposed on the interface layer,
wherein the interface layer comprises a portion which directly contacts the etched flat surface of the n-type GaN-based layer,
wherein a first thickness of the conductive support structure is 0.5 times less than a width of the top surface of the GaN-based semiconductor structure,
wherein a second thickness of the GaN-based semiconductor structure from the bottom surface to the top surface is less than 5 micrometers, and
wherein the second thickness of the GaN-based semiconductor structure is less than 1/20 thick of the first thickness of the conductive support structure.
13. The vertical topology light emitting device according to claim 12 , wherein the conductive support structure comprises Cu, Au, or Al.
14. The vertical topology light emitting device according to claim 12 , wherein the adhesion layer comprises Cr and Au.
15. The vertical topology light emitting device according to claim 12 , wherein the etched flat surface is n-GaN.
16. The vertical topology light emitting device according to claim 12 , wherein the interface layer comprises Al.
17. The vertical topology light emitting device according to claim 12 , wherein the contact pad comprises Cr and Au.
18. The vertical topology light emitting device according to claim 12 , wherein the adhesion layer comprises a first adhesion layer and a second adhesion layer.
19. The vertical topology light emitting device according to claim 12 , wherein the p-type contact includes a reflective contact.
20. A vertical topology light emitting device, comprising:
a conductive support structure comprising Cu;
an adhesion layer disposed on the conductive support structure;
a p-type contact disposed on the adhesion layer;
a GaN-based semiconductor structure disposed on the p-type contact, wherein the GaN-based semiconductor structure comprises an n-type GaN-based layer, a p-type GaN-based layer, and an active layer between the n-type GaN-based layer and the p-type GaN-based layer, wherein the n-type GaN-based layer has an etched flat surface, and wherein the GaN-based semiconductor structure includes a bottom surface proximate to the conductive support structure, a top surface opposite to the bottom surface, and a side surface between the top surface and the bottom surface;
an interface layer on the GaN-based semiconductor structure comprising Al; and
a contact pad disposed on the interface layer,
wherein the interface layer comprises a portion which directly contacts the etched flat surface of the n-type GaN-based layer,
wherein a first thickness of the conductive support structure is 0.5 times less than a width of the top surface of the GaN-based semiconductor structure,
wherein a second thickness of the GaN-based semiconductor structure from the bottom surface to the top surface is less than 5 micrometers,
wherein the second thickness of the GaN-based semiconductor structure is less than 1/20 thick of the first thickness of the conductive support structure, and
wherein the p-type contact includes a reflective contact.