Patent Assignment
Reel/Frame 014830/0212
Security Interest
Recorded: 2003-12-23
Received: 2003-12-23
Pages: 15
Assignor
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
Executed: 2003-09-23
Assignee
JPMORGAN CHASE BANK, AS COLLATERAL AGENT
270 PARK AVENUE, NEW YORK, NY, 10017, UNITED STATES
Covered Properties
(39)
Method of Forming a Variable Frequency Oscillator and Structure Therefor
Application:
10/642,539 →
Method of Forming a High Efficiency Power Controller
Application:
10/638,227 →
Cell Structure for Bipolar Integrated Circuits and Method
Application:
10/637,405 →
Semiconductor Device and Method of Providing Regions of Low Substrate Capacitance
Application:
10/632,636 →
Packaged Semiconductor Device
Application:
29/187,122 →
Method of Making a Vertical Compound Semiconductor Field Effect Transistor Device
Application:
10/623,392 →
Vertical Compound Semiconductor Field Effect Transistor Structure
Application:
10/623,397 →
Dc/Dc Converter with Depletion Mode Compound Semiconductor Field Effect Transistor Switching Device
Application:
10/623,390 →
Semiconductor Assembly Method and Equipment Therefor
Application:
10/623,870 →
Low Voltage Transient Voltage Suppressor
Application:
10/620,259 →
Method for forming an encapsulated device and structure
Application:
10/606,396 →
Direct Chip Attach Structure and Method
Application:
10/603,258 →
Method of Forming a Vertical Power Semiconductor Device and Structure Therefor
Application:
10/464,971 →
Power Factor Correction Method with Zero Crossing Detection and Adjustable Stored Reference Voltage
Application:
10/465,733 →
Method of Forming a Reference Voltage Generator and Structure Therefor
Application:
10/464,100 →
Semiconductor Power Device Having a Diamond Shaped Metal Interconnect Scheme
Application:
10/454,870 →
Controlled Frequency Power Factor Correction Circuit and Method
Application:
10/432,537 →
High Speed Receiver with Wide Input Voltage Range
Application:
10/436,737 →
Power Factor Correction Circuit and Method of Varying Switching Frequency
PCT:
PCTUS2003013859 ↗
Method of Forming a Protection Circuit and Structure Therefor
Application:
10/429,399 →
Method of forming a body contact of a transistor and structure therefor
Application:
10/426,515 →
Method of Making a Low Profile Packaged Semiconductor Device
PCT:
PCTUS2003013027 ↗
Method of Forming a Reference Voltage and Structure Therefor
PCT:
PCTUS2003012082 ↗
Method of Forming a Low Quiescent Current Voltage Regulator and Structure Therefor
Application:
10/412,507 →
Low Voltage Transient Voltage Suppressor and Method of Making
Application:
10/406,106 →
Hybrid Regulator with Switching and Linear Sections
Application:
10/387,206 →
Method of Forming a Power System and Structure Therefor
Application:
10/388,252 →
Ldmos Transistor with Enhanced Termination Region for High Breakdown Voltage with Low On-Resistance
Application:
10/384,144 →
Buffer Circuit with Programmable Switching Thresholds
Application:
10/376,395 →
Disk Drive Including an Actuator Main Coil and an Actuator Secondary Coil with a Lateral Segment and Method of Operating Same
Application:
10/377,210 →
Method of Forming a Voltage Detection Device and Structure Therefor
Application:
10/254,274 →
Method of Forming a Semiconductor Device and Structure Therefor
Application:
10/195,166 →
Method of Forming a Semiconductor Device and Structure Therefor
Application:
10/194,165 →
Power Converter Circuit and Method for Controlling
Application:
10/184,539 →
Method of Making a Semiconductor Device with a Low Permittivity Region
Application:
10/123,657 →
Method of Forming a Semiconductor Device and Structure Therefor
Application:
10/122,169 →
Semiconductor Device Having Regions of Low Substrate Capacitance
Application:
09/964,727 →
Semiconductor Device and Method
Application:
09/802,402 →
Method of Manufacturing a Semiconductor Component
Application:
09/764,981 →