Patent Assignment
Reel/Frame 025446/0042
Merger
Recorded: 2010-12-07
Received: 2010-12-07
Pages: 13
Assignor
PEGRE SEMICONDUCTORS LLC
Executed: 2010-12-07
Assignee
INTELLECTUAL VENTURES I LLC
2711 CENTERVILLE RD, SUITE 400, WILMINGTON, DE, 19808, UNITED STATES
Covered Properties
(26)
Multilevel Semiconductor Memory, Write/Read Method Thereto/Therefrom and Storage Medium Storing Write/Read Program
Application:
12/888,184 →
Semiconductor Device Having Controllable Transistor Threshold Voltage
Application:
12/575,915 →
Semiconductor Device Including Transistor with Composite Gate Structure and Transistor with Single Gate Structure, and Method for Manufacturing the Same
Application:
12/254,683 →
System and Method for a Log-Based Data Storage
Application:
12/172,971 →
Semiconductor Device Including Transistor with Composite Gate Structure and Transistor with Single Gate Structure, and Method for Manufacturing the Same
Application:
11/958,708 →
Method for Fabricating a Semiconductor Storage Device Having an Increased Dielectric Film Area
Application:
11/655,744 →
Multilevel Semiconductor Memory, Write/Read Method Thereto/Therefrom and Storage Medium Storing Write/Read Program
Application:
11/513,908 →
Multilevel Semiconductor Memory, Write/Read Method Thereto/Therefrom and Storage Medium Storing Write/Read Program
Application:
11/513,913 →
Multilevel Semiconductor Memory, Write/Read Method Thereto/Therefrom and Storage Medium Storing Write/Read Program
Application:
11/513,907 →
Semiconductor Device Including Transistor with Composite Gate Structure and Transistor with Single Gate Structure, and Method for Manufacturing the Same
Application:
11/494,296 →
Shield Plate Electrode Fro Semiconductor Device
Application:
11/494,382 →
Semiconductor Device Including Transistor with Composite Gate Structure and Transistor with Single Gate Structure, and Method for Manufacturing the Same
Application:
11/494,261 →
Semiconductor Device Having Controllable Transistor Threshold Voltage
Application:
11/370,709 →
Non-Volatile Semiconductor Memory with Single Layer Gate Structure
Application:
10/953,094 →
Semiconductor Device Including Transistor with Composite Gate Structure and Transistor with Single Gate Structure, and Method for Manufacturing the Same
Application:
10/725,318 →
Semiconductor Device Including Transistor with Composite Gate Structure and Transistor with Single Gate Structure, and Method for Manufacturing the Same
Application:
10/653,237 →
Multilevel Semiconductor Memory, Write/Read Method Thereto/Therefrom and Storage Medium Storing Write/Read Program
Application:
10/642,765 →
Multilevel Semiconductor Memory, Write/Read Method Thereto/Therefrom and Storage Medium Storing Write/Read Program
Application:
10/642,764 →
System and Method for Reading Data Stored in a Semiconductor Device Having Multilevel Memory Cells
Application:
10/643,188 →
Device and Method for Reading Data Stored in a Semiconductor Device Having Multilevel Memory Cells
Application:
10/643,187 →
Multilevel Semiconductor Memory, Write/Read Method Thereto/Therefrom and Storage Medium Storing Write/Read Program
Application:
10/643,222 →
Multi-Level Type Nonvolatile Semiconductor Memory Device
Application:
10/303,726 →
Non-Volaltile Semicondutor Memory with Single Layer Gate Structure
Application:
10/270,449 →
Semiconductor Device Having a Shield Plate for Applying Electric Potential to the Semiconductor Substrate
Application:
10/269,951 →
Multi-Level Type Nonvolatile Semiconductor Memory Device
Application:
10/146,949 →
Semiconductor Device Including Transistor with Composite Gate Structure and Transistor with Single Gate Structure, and Method for Manufacturing the Same
Application:
10/118,039 →