Process for fabricating a dielectric film using plasma oxidation
View Patent ↗A high density plasma oxidation process is provided in which a dielectric film is formed having a predetermined thickness. Plasma oxidation conditions are provided such that the growth rate of the dielectric film is limited in order to produce dielectric layer having a precise thickness and uniformity. The high density plasma oxidation process can be used to fabricate gate oxide layers, passivation layers and antifuse layers in semiconductor devices such as semiconductor memory devices and multi-level memory arrays.
1. A process for forming an antifuse comprising:
exposing an oxidizable surface to an plasma oxidation process for an initial exposure time; and
growing an oxide film on the oxidizable surface, and
wherein the oxide film grows to a predetermined thickness at an end of the initial exposure time, and wherein additional exposure to the plasma oxidation process beyond the initial exposure time does not result in a significant further increase in thickness of the oxide film.
2. The process of claim 1 , wherein the plasma oxidation process comprises providing a substrate having a back surface opposite a face surface, wherein the oxidizable surface comprises at least a portion of the face surface, and contacting the back surface with a cooling medium.
3. The process of claim 1 , wherein the plasma oxidation process comprises applying an RF bias voltage to the oxidizable surface.
4. The process of claim 1 , wherein the plasma oxidation process comprises generating a plasma comprising oxygen and an inert gas.
5. The process of claim 1 , further comprising subjecting the oxidizable surface to a plasma containing a nitrogen species prior to exposing the oxidizable surface to a plasma oxidation process.
6. The process of claim 5 , wherein subjecting the oxidizable surface to a plasma containing a nitrogen species comprises subjecting the oxidizable surface to a plasma formed by a gas selected from the group consisting of nitrogen, nitrous oxide and ammonia.
7. A plasma oxidation process comprising:
exposing an oxidizable surface to an oxidizing plasma,
wherein the oxidizing plasma has an activity relative to the oxidizable surface;
forming an oxide film on the oxidizable surface; and
regulating the oxidizing plasma activity to limit a rate of formation of the oxide film by regulating at least one of the following: reaction kinetics, growth initiation, and surface energy.
8. The plasma oxidation process of claim 7 , wherein regulating the oxidizing plasma activity comprises bombarding the oxidizable surface with energized ions prior to exposing the oxidizable surface to the oxidizing plasma.
9. The plasma oxidation process of claim 8 , wherein bombarding the oxidizable surface comprises bombarding the oxidizable surface to remove contaminants from the oxidizable surface.
10. The plasma oxidation process of claim 8 , wherein bombarding the oxidizable surface comprises bombarding the oxidizable surface to remove other oxide layers present on the oxidizable surface.
11. The plasma oxidation process of claim 8 , wherein bombarding the oxidizable surface comprises bombarding the oxidizable surface to facet the oxidizable surface.
12. The plasma oxidation process of claim 8 , wherein bombarding the oxidizable surface with energized ions comprises subjecting the oxidizable surface to a bias voltage.
13. The plasma oxidation process of claim 7 , wherein regulating the oxidizing plasma activity comprises diluting the oxidizing plasma with an inert gas.
14. The plasma oxidation process of claim 7 further comprising providing a substrate having a back surface opposite a face surface, wherein the oxidizable surface comprises at least a portion of the face surface, and wherein regulating the oxidizing plasma activity comprises contacting the back surface with a cooling medium.
15. The plasma oxidation process of claim 7 , wherein regulating the oxidizing plasma activity comprises applying an RF bias voltage to the oxidizable surface.
16. The plasma oxidation process of claim 7 further comprising:
providing a plasma chamber;
placing a substrate in the plasma chamber; and
igniting the oxidizing plasma after placing the substrate in the plasma chamber.
17. The plasma oxidation process of claim 7 further comprising igniting an inert gas plasma prior to igniting the oxidizing plasma.
18. The plasma oxidation process of claim 17 further comprising placing the oxidizable surface in the inert gas plasma.
19. The plasma oxidation process of claim 7 further comprising providing a plasma power source having an output power, and wherein regulating the oxidizing plasma comprises limiting the output power to a predetermined level.
20. The plasma oxidation process of claim 7 , wherein the oxidizable surface comprises silicon.
21. The plasma oxidation process of claim 7 , wherein the oxidizable surface comprises a semiconductor element of an antifuse device.
22. The plasma oxidation process of claim 7 , wherein exposing an oxidizable surface to an oxidizing plasma comprises exposing the oxidizable surface to a plasma comprising oxygen.
23. The plasma oxidation process of claim 7 , wherein regulating the oxidizing plasma activity comprises applying a bias voltage and sputtering a portion of the oxide film while simultaneously forming the oxide film.
24. A process for fabricating an oxide film in a semiconductor device comprising the steps of:
forming a semiconductor layer;
exposing the semiconductor layer to a plasma comprising oxygen,
wherein the plasma has an activity relative to the semiconductor layer;
forming an oxide film on the semiconductor layer; and
regulating the plasma activity to limit a rate of formation of the oxide film by regulating at least one of the following: reaction kinetics, growth initiation, and surface energy.
25. The process of claim 24 , wherein the step of forming a semiconductor layer comprises forming a doped semiconductor layer.
26. The process of claim 24 , wherein the step of forming a semiconductor layer comprises forming a silicon layer.
27. The process of claim 24 , wherein the step of forming a semiconductor layer comprises forming a germanium layer.
28. The process of claim 24 further comprising forming an electrically conductive layer prior to forming the semiconductor layer.
29. The process of claim 24 , wherein the oxide film comprises a gate oxide layer.
30. The process of claim 24 , wherein the oxide film comprises a passivation layer.
31. A process for fabricating a dielectric film in a semiconductor device comprising the steps of:
exposing an oxidizable surface to a plasma comprising an oxygen species and a nitrogen species,
wherein the plasma has an activity relative to the oxidizable surface;
forming an oxynitride film on the oxidizable surface; and
regulating the plasma activity to limit a rate of formation of the oxynitride film by regulating at least one of the following: reaction kinetics, growth initiation, and surface energy.
32. The process of claim 31 , wherein the nitrogen species comprises a compound selected from the group consisting of nitrogen, ammonia and nitrous oxide.
33. The process of claim 31 , wherein the step of forming an oxynitride film comprises a gate oxide layer.
34. The process of claim 31 , wherein the step of forming an oxynitride film comprises a passivation layer.
35. The process of claim 31 , wherein the step of forming an oxynitride film comprises an antifuse layer.
36. The process of claim 31 , further comprising subjecting the oxidizable surface to a plasma containing a nitrogen species prior to exposing the oxidizable surface to a plasma comprising an oxygen species and a nitrogen species.
37. The process of claim 36 , wherein subjecting the oxidizable surface to a plasma containing a nitrogen species comprises subjecting the oxidizable surface to a plasma formed by a gas selected from the group consisting of nitrogen, nitrous oxide and ammonia.
38. A process for fabricating an oxide film in a semiconductor device comprising the steps of:
exposing an oxidizable surface to a plasma comprising oxygen,
wherein the plasma has an activity relative to the oxidizable surface;
forming an oxide film on the oxidizable surface;
regulating the plasma activity to limit a rate of formation of the oxide film by regulating at least one of the following: reaction kinetics, growth initiation, and surface energy; and
forming a silicon nitride layer overlying the oxide film.
39. The process of claim 38 , wherein the step of forming a silicon nitride layer comprises plasma deposition of silicon nitride.
40. The process of claim 38 , wherein the step of forming a silicon nitride layer comprises chemical vapor deposition of silicon nitride.
41. The process of claim 38 , further comprising subjecting the oxidizable surface to a plasma containing a nitrogen species prior to exposing the oxidizable surface to a plasma comprising oxygen.
42. The process of claim 41 , wherein subjecting the oxidizable surface to a plasma containing a nitrogen species comprises subjecting the oxidizable surface to a plasma formed by a gas selected from the group consisting of nitrogen, nitrous oxide and ammonia.
43. A process for fabricating a dielectric film in a semiconductor device comprising the steps of:
exposing an oxidizable surface to a plasma comprising an oxygen species,
wherein the plasma has an activity relative to the oxidizable surface;
forming an oxide film having an upper surface on the oxidizable surface;
regulating the plasma activity to limit a rate of formation of the oxide film by regulating at least one of the following: reaction kinetics, growth initiation, and surface energy; and
forming an oxynitride region at the upper surface of the oxide film.
44. The process of claim 43 , wherein the step of forming an oxynitride region comprises subjecting the oxide film to a plasma containing a nitrogen species.
45. The process of claim 44 , wherein subjecting the oxide film to a plasma containing a nitrogen species comprises subjecting the oxide film to a plasma formed by a gas selected from the group consisting of nitrogen, nitrous oxide and ammonia.
46. The process of claim 43 , further comprising subjecting the oxidizable surface to a plasma containing a nitrogen species prior to exposing the oxidizable surface to a plasma comprising oxygen.
47. The process of claim 46 , wherein subjecting the oxidizable surface to a plasma containing a nitrogen species comprises subjecting the oxidizable surface to a plasma formed by a gas selected from the group consisting of nitrogen, nitrous oxide and ammonia.
48. A plasma oxidation process comprising:
exposing an oxidizable surface to an oxidizing plasma,
wherein the oxidizing plasma has an activity relative to the oxidizable surface;
forming an oxide film on the oxidizable surface; and
regulating the oxidizing plasma activity to limit a rate of formation of the oxide film to a predetermined growth rate while the oxidizable surface is being exposed to the oxidizing plasma.
49. The plasma oxidation process of claim 48 , wherein regulating the oxidizing plasma activity comprises bombarding the oxidizable surface with energized ions prior to exposing the oxidizable surface to the oxidizing plasma.
50. The plasma oxidation process of claim 49 , wherein bombarding the oxidizable surface comprises bombarding the oxidizable surface to remove contaminants from the oxidizable surface.
51. The plasma oxidation process of claim 49 , wherein bombarding the oxidizable surface comprises bombarding the oxidizable surface to remove other oxide layers present on the oxidizable surface.
52. The plasma oxidation process of claim 49 , wherein bombarding the oxidizable surface comprises bombarding the oxidizable surface to facet the oxidizable surface.
53. The plasma oxidation process of claim 49 , wherein bombarding the oxidizable surface with energized ions comprises subjecting the oxidizable surface to a bias voltage.
54. The plasma oxidation process of claim 48 , wherein regulating the oxidizing plasma activity comprises diluting the oxidizing plasma with an inert gas.
55. The plasma oxidation process of claim 48 further comprising providing a substrate having a back surface opposite a face surface, wherein the oxidizable surface comprises at least a portion of the face surface, and wherein regulating the oxidizing plasma activity comprises contacting the back surface with a cooling medium.
56. The plasma oxidation process of claim 48 , wherein regulating the oxidizing plasma activity comprises applying an RF bias voltage to the oxidizable surface.
57. The plasma oxidation process of claim 48 further comprising:
providing a plasma chamber;
placing a substrate in the plasma chamber; and
igniting the oxidizing plasma after placing the substrate in the plasma chamber.
58. The plasma oxidation process of claim 48 further comprising igniting an inert gas plasma prior to igniting the oxidizing plasma.
59. The plasma oxidation process of claim 58 further comprising placing the oxidizable surface in the inert gas plasma.
60. The plasma oxidation process of claim 48 further comprising providing a plasma power source having an output power, and wherein regulating the oxidizing plasma comprises limiting the output power to a predetermined level.
61. The plasma oxidation process of claim 48 , wherein the oxidizable surface comprises silicon.
62. The plasma oxidation process of claim 48 , wherein the oxidizable surface comprises a semiconductor element of an antifuse device.
63. The plasma oxidation process of claim 48 , wherein exposing an oxidizable surface to an oxidizing plasma comprises exposing the oxidizable surface to a plasma comprising oxygen.
64. The plasma oxidation process of claim 48 , wherein regulating the oxidizing plasma activity comprises applying a bias voltage and sputtering a portion of the oxide film while simultaneously forming the oxide film.
65. A process for fabricating an oxide film in a semiconductor device comprising the steps of:
forming a semiconductor layer;
exposing the semiconductor layer to a plasma comprising oxygen,
wherein the plasma has an activity relative to the semiconductor layer;
forming an oxide film on the semiconductor layer; and
regulating the plasma activity to limit a rate of formation of the oxide film to a predetermined growth rate while the semiconductor layer is being exposed to the plasma.
66. The process of claim 65 , wherein the step of forming a semiconductor layer comprises forming a doped semiconductor layer.
67. The process of claim 65 , wherein the step of forming a semiconductor layer comprises forming a silicon layer.
68. The process of claim 65 , wherein the step of forming a semiconductor layer comprises forming a germanium layer.
69. The process of claim 65 further comprising forming an electrically conductive layer prior to forming the semiconductor layer.
70. The process of claim 65 , wherein the oxide film comprises a gate oxide layer.
71. The process of claim 65 , wherein the oxide film comprises a passivation layer.
72. A process for fabricating a dielectric film in a semiconductor device comprising the steps of:
exposing an oxidizable surface to a plasma comprising an oxygen species and a nitrogen species,
wherein the plasma has an activity relative to the oxidizable surface;
forming an oxynitride film on the oxidizable surface; and
regulating the plasma activity to limit a rate of formation of the oxynitride film to a predetermined growth rate while the oxidizable surface is being exposed to the plasma.
73. The process of claim 72 , wherein the nitrogen species comprises a compound selected from the group consisting of nitrogen, ammonia and nitrous oxide.
74. The process of claim 72 , wherein the step of forming an oxynitride film comprises a gate oxide layer.
75. The process of claim 72 , wherein the step of forming an oxynitride film comprises a passivation layer.
76. The process of claim 72 , wherein the step of forming an oxynitride film comprises an antifuse layer.
77. The process of claim 72 , further comprising subjecting the oxidizable surface to a plasma containing a nitrogen species prior to exposing the oxidizable surface to a plasma comprising an oxygen species and a nitrogen species.
78. The process of claim 77 , wherein subjecting the oxidizable surface to a plasma containing a nitrogen species comprises subjecting the oxidizable surface to a plasma formed by a gas selected from the group consisting of nitrogen, nitrous oxide and ammonia.
79. A process for fabricating an oxide film in a semiconductor device comprising the steps of:
exposing an oxidizable surface to a plasma comprising oxygen,
wherein the plasma has an activity relative to the oxidizable surface;
forming an oxide film on the oxidizable surface;
regulating the plasma activity to limit a rate of formation of the oxide film to a predetermined growth rate while the oxidizable surface is being exposed to the plasma; and
forming a silicon nitride layer overlying the oxide film.
80. The process of claim 79 , wherein the step of forming a silicon nitride layer comprises plasma deposition of silicon nitride.
81. The process of claim 79 , wherein the step of forming a silicon nitride layer comprises chemical vapor deposition of silicon nitride.
82. The process of claim 79 , further comprising subjecting the oxidizable surface to a plasma containing a nitrogen species prior to exposing the oxidizable surface to a plasma comprising oxygen.
83. The process of claim 82 , wherein subjecting the oxidizable surface to a plasma containing a nitrogen species comprises subjecting the oxidizable surface to a plasma formed by a gas selected from the group consisting of nitrogen, nitrous oxide and ammonia.
84. A process for fabricating a dielectric film in a semiconductor device comprising the steps of:
exposing an oxidizable surface to a plasma comprising an oxygen species,
wherein the plasma has an activity relative to the oxidizable surface;
forming an oxide film having an upper surface on the oxidizable surface;
regulating the plasma activity to limit a rate of formation of the oxide film to a predetermined growth rate while the oxidizable surface is being exposed to the plasma; and
forming an oxynitride region at the upper surface of the oxide film.
85. The process of claim 84 , wherein the step of forming an oxynitride region comprises subjecting the oxide film to a plasma containing a nitrogen species.
86. The process of claim 85 , wherein subjecting the oxide film to a plasma containing a nitrogen species comprises subjecting the oxide film to a plasma formed by a gas selected from the group consisting of nitrogen, nitrous oxide and ammonia.
87. The process of claim 83 , further comprising subjecting the oxidizable surface to a plasma containing a nitrogen species prior to exposing the oxidizable surface to a plasma comprising oxygen.
88. The process of claim 87 , wherein subjecting the oxidizable surface to a plasma containing a nitrogen species comprises subjecting the oxidizable surface to a plasma formed by a gas selected from the group consisting of nitrogen, nitrous oxide and ammonia.