Process for forming microstructures
View Patent ↗The present invention relates to a process for forming microstructures on a substrate. A plating surface is applied to a substrate. A first layer of photoresist is applied on top of the plating base. The first layer of photoresist is exposed to radiation in a pattern to render the first layer of photoresist dissolvable in a first pattern. The dissolvable photoresist is removed and a first layer of primary metal is electroplated in the area where the first layer of photoresist was removed. The remainder of the photoresist is then removed and a second layer of photoresist is then applied over the plating base and first layer of primary metal. The second layer of photoresist is then exposed to a second pattern of radiation to render the photoresist dissolvable and the dissolvable photoresist is removed. The second pattern is an area that surrounds the primary structure, but it does not entail the entire substrate. Rather it is an island surrounding the primary metal. The exposed surface of the secondary metal is then machined down to a desired height of the primary metal. The secondary metal is then etched away.
1. A process for forming a micromechanical structure comprising:
providing a plating base on a surface of a substrate;
forming a first photoresist layer on the plating base;
exposing the first photoresist layer to a first pattern of radiation to render the first photoresist layer dissolvable in a first pattern;
removing the dissolvable photoresist of the first photoresist layer;
electroplating a layer of a primary metal onto the plating base in the area where the first photoresist layer has been removed;
removing the remainder of the first photoresist layer;
forming a second photoresist layer over the plating base and the layer of primary metal;
exposing the second photoresist layer to a second pattern of radiation to render the second photoresist layer dissolvable in a second pattern, the second pattern being formed such that an area surrounding the primary metal is dissolved, wherein the area is less than the entirety of the substrate;
removing the dissolvable photoresist of the second photoresist layer;
electroplating an amount of a secondary metal in the area where the second photoresist layer has been removed;
removing the remainder of the photoresist of the second photoresist layer;
electroplating an amount of a third metal over substantially the entire length of the substrate;
machining the third metal, the secondary metal, and the primary metal down to a substantially flat surface corresponding to a desired height of the layer of primary metal; and
etching away the remainder of the secondary and third metals.
2. The process of claim 1 , wherein the secondary metal is capable of being etched without substantially etching the primary metal.
3. The process of claim 1 , wherein the amount of the secondary metal electroplated provides horizontal mechanical stability to the primary metal.
4. The process of claim 1 , wherein the primary metal is electroplated to a height greater than a desired height of the primary metal.
5. The process of claims 1 or 4 , wherein the secondary metal is electroplated to a height greater than a height of the electroplated primary metal.
6. The process of claim 1 , wherein the primary metal is a Ni—Mn alloy.
7. The process of claims 1 or 6 , wherein the secondary metal is Cu.
8. The process of claim 1 , wherein the radiation is ultraviolet light.
9. The process of claim 1 , further including etching away the plating base.
10. The process of claim 1 , wherein the third metal is a low stress metal.
11. The process of claim 1 , wherein the third metal is one of a porous, grain stabilized, or composite metal.
12. The process of claim 11 , wherein the third metal is a copper composite with a suspension of ceramic powder.
13. The process of claim 1 , wherein the third metal and the secondary metal are etched away using the same process.
14. The process of claim 13 , wherein the third metal and the secondary metal are etched away at the same time.
15. The process of claim 10 , wherein the secondary metal is a high stress metal.
16. The process of claim 10 wherein the low stress metal is not capable of withstanding a maximum stress of 51 GPa.
17. A process of forming a micromechanical electrical structure comprising:
depositing a first seed layer on a substrate;
depositing a first photoresist layer on the first seed layer;
exposing the first photoresist layer to a first pattern of radiation to render the first photoresist layer dissolvable in a first pattern;
removing the dissolvable photoresist of the first photoresist layer;
removing a portion of the first seed layer in the area where the first photoresist layer has been removed;
removing the remainder of the first photoresist layer;
depositing a second seed layer on the substrate and first seed layer;
depositing a second photoresist layer on the exposed surfaces of the first seed layer and the exposed surface of the second seed layer;
exposing the second photoresist layer to a second pattern of radiation to render the second photoresist layer dissolvable in a second pattern;
removing the dissolvable photoresist of the second photoresist layer;
etching away a portion of the second seed layer in the area where the second photoresist layer has been dissolved;
electroplating a layer of a primary metal across the plating base in the area where the second photoresist layer has been removed;
removing the remainder of the second photoresist layer;
applying a third photoresist layer across the second seed layer and the layer of primary metal;
exposing the third photoresist layer to a third pattern of radiation to render the third photoresist layer dissolvable in a third pattern, the third pattern being formed such that an area surrounding the primary metal is dissolved, wherein the area is less than the entirety of the substrate;
electroplating an amount of a secondary metal in the area where the third photoresist layer has been removed;
removing the remainder of the photoresist of the second photoresist layer;
electroplating an amount of a third metal over substantially the entire length of the substrate;
machining the third metal, the secondary metal, and the primary metal down to a substantially flat surface corresponding to a desired height of the layer of primary metal;
etching away the remainder of the secondary and third metal; and
etching away the second seed layer.
18. The process of claim 17 , wherein the substrate includes a via that allows electrical signals to pass from a first face of the substrate to a second face.
19. The process of claim 17 , wherein the secondary and third metals are capable of being etched without substantially etching the primary metal.
20. The process of claim 17 , wherein the amount of the secondary metal electroplated is only an amount such that it provides horizontal mechanical stability to the layer of primary metal.
21. The process of claim 17 , wherein the layer of primary metal is electroplated to a height greater than the desired height of the layer of primary metal.
22. The process of claims 17 or 21 , wherein the secondary metal is electroplated to a height greater than a height of the electroplated layer of primary metal.
23. The process of claim 17 , wherein the primary metal is a Ni—Mn alloy.
24. The process of claims 17 or 23 , wherein the secondary metal is Cu.
25. The process of claim 17 , wherein the third metal is a low stress metal.
26. The process of claim 17 , wherein the third metal is one of a porous, grain stabilized, or composite metal.
27. The process of claim 26 , wherein the third metal is a copper composite with a suspension of ceramic powder.
28. The process of claim 17 , wherein the third metal and the secondary metal are etched away using the same process.
29. The process of claim 28 , wherein the third metal and the secondary metal are etched away at the same time.
30. The process of claim 25 , wherein the secondary metal is a high stress metal.
31. The process of claim 25 , wherein the low stress metal is not capable of withstanding a maximum stress of 51 GPa.