Miniaturized wide-band baluns for RF applications
View Patent ↗A wide-band balun device includes a first metallization deposited over a substrate and oriented in a first coil. The first coil extends horizontally across the substrate while maintaining a substantially flat vertical profile. A second metallization is deposited over the substrate and oriented in a second coil. The second coil is magnetically coupled to the first coil and a portion of the second coil oriented interiorly of the first coil. A third metallization is deposited over the substrate and oriented in a third coil. The third coil is magnetically coupled to the first and second coils. A first portion of the third coil is oriented interiorly of the second coil. The third coil has a balanced port connected to the third coil between second and third portions of the third coil.
1. A wide-band balun device, comprising:
a first multi-layered coil formed over a substrate in a wound configuration with first, second, and third portions of the first multi-layered coil including a u-shape and being disposed at different levels with the first portion of the first multi-layered coil being disposed at a first level;
a second multi-layered coil formed in a wound configuration with first, second, and third portions of the second multi-layered coil including a u-shape and being disposed at different levels with the first portion of the second multi-layered coil being disposed at a second level over the first level, the first portion of the second multi-layered coil being adjacent and magnetically coupled to the first portion of the first multi-layered coil, the second multi-layered coil being electrically isolated from the first multi-layered coil;
a third multi-layered coil formed in a wound configuration including first, second, and third portions of the third multi-layered coil including a u-shape and being disposed at different levels with the first portion of the third multi-layered coil being disposed at a third level over the second level, the first portion of the third multi-layered coil being adjacent and magnetically coupled to the first portion of the second multi-layered coil, the third multi-layered coil being electrically isolated from the second multi-layered coil; and
the second portion of the first multi-layered coil being disposed at a fourth level over the third level, the second portion of the first multi-layered coil being adjacent and magnetically coupled to the first portion of the third multi-layered coil, the first multi-layered coil being electrically isolated from the third multi-layered coil.
2. The wide-band balun device of claim 1 , wherein the substrate includes silicon, glass, or ceramic material for structural support.
3. The wide-band balun device of claim 1 , wherein the first, second, and third multi-layered coils have a rectangular cross-section.
4. The wide-band balun device of claim 1 , wherein the first, second, and third multi-layered coils include copper or a copper alloy material.
5. The wide-band balun device of claim 1 , further including a semiconductor device containing the first, second, and third multi-layered coils.
6. The wide-band balun device of claim 1 , wherein a thickness of the first multi-layered coil is greater than a skin depth of the first multi-layered coil to minimize metal loss of the first multi-layered coil and minimize an effect of a decline in current density with respect to the thickness of the first multi-layered coil.
7. The wide-band balun device of claim 1 , wherein the wide-band balun device includes dimensions less than 1.6 mm×1.0 mm×0.25 mm and operates at a range of 0.800-6.000 GHz.
8. A balun device, comprising:
a first multi-layered coil formed over a substrate in a wound configuration including a first u-shaped portion;
a second multi-layered coil formed in a wound configuration with a first u-shaped portion of the second multi-layered coil adjacent and magnetically coupled to the first u-shaped portion of the first multi-layered coil, the second multi-layered coil being electrically isolated from the first multi-layered coil;
a third multi-layered coil formed in a wound configuration with a first u-shaped portion of the third multi-layered coil adjacent and magnetically coupled to the first u-shaped portion of the second multi-layered coil, the third multi-layered coil being electrically isolated from the second multi-layered coil; and
a second u-shaped portion of the first multi-layered coil being adjacent and magnetically coupled to the first u-shaped portion of the third multi-layered coil.
9. The balun device of claim 8 , further including a semiconductor device containing the first, second, and third multi-layered coils.
10. The balun device of claim 8 , wherein the substrate includes silicon, glass, or ceramic material for structural support.
11. The balun device of claim 8 , wherein the first, second, and third multi-layered coils have a rectangular cross-section or round cross-section.
12. The balun device of claim 8 , wherein the first, second, and third multi-layered coils include nested first, second, and third portions.
13. The balun device of claim 8 , wherein the balun device includes dimensions less than 1.6 mm×1.0 mm×0.25 mm and operates at a range of 0.800-6.000 GHz.
14. A balun for a semiconductor device, comprising:
a first multi-layered metallization formed over a substrate including first, second, and third portions disposed at different levels;
a second multi-layered metallization with first, second, and third portions disposed at different levels and the first portion of the second multi-layered metallization being adjacent and magnetically coupled to the first portion of the first multi-layered metallization, the second multi-layered metallization being electrically isolated from the first multi-layered metallization;
a third multi-layered metallization with first, second, and third portions disposed at different levels and the first portion of the third multi-layered metallization disposed adjacent and magnetically coupled to the first portion of the second multi-layered metallization, the third multi-layered metallization being electrically isolated from the second multi-layered metallization; and
the second portion of the first multi-layered metallization being adjacent and magnetically coupled to the first portion of the third multi-layered metallization.
15. The balun of claim 14 , wherein the substrate includes silicon, glass, or ceramic material for structural support.
16. The balun of claim 14 , wherein the first, second, and third multi-layered metallizations include copper or a copper alloy material.
17. The balun of claim 14 , wherein the first, second, and third multi-layered metallizations have a rectangular or round cross-section.
18. The balun of claim 14 , wherein the first, second, and third portions of the first, second, and third multi-layered metallizations are u-shaped.
19. A method of manufacturing a balun, comprising:
forming a first multi-layered metallization including a first portion of the first multi-layered metallization disposed over a substrate;
forming a second multi-layered metallization with a first portion of the second multi-layered metallization being adjacent and magnetically coupled to the first portion of the first multi-layered metallization, the second multi-layered metallization being electrically isolated from the first multi-layered metallization;
forming a third multi-layered metallization with a first portion of the third multi-layered metallization being adjacent and magnetically coupled to the first portion of the second multi-layered metallization, the third multi-layered metallization being electrically isolated from the second multi-layered metallization; and
disposing a second portion of the first multi-layered metallization adjacent and magnetically coupled to the first portion of the third multi-layered metallization.
20. The method of claim 19 , wherein the first, second, and third multi-layered metallizations include copper or a copper alloy material.
21. The method of claim 19 , wherein the first, second, and third multi-layered metallizations have a rectangular cross-section or round cross-section.
22. The method of claim 19 , wherein the substrate includes silicon, glass, or ceramic material for structural support.
23. The method of claim 19 , further including forming the first, second, and third multi-layered metallizations on a semiconductor device.
24. The method of claim 19 , wherein the first, second, and third multi-layered metallizations include first, second, and third u-shaped portions.
25. The method of claim 19 , wherein a thickness of the first, second, and third multi-layered metallizations is greater than a skin depth of the first, second, and third multi-layered metallizations to minimize metal loss and minimize an effect of a decline in current density with respect to the thickness of the first, second, and third multi-layered metallizations.
26. A balun device, comprising:
a first coil including multiple layers formed in a wound configuration at different levels over a substrate;
a second coil including multiple layers formed in a wound configuration at different levels with the multiple layers of the second coil being nested with respect to the multiple layers of the first coil, the second coil being electrically isolated from the first coil; and
a third coil formed including multiple layers formed in a wound configuration at different levels with the multiple layers of the third coil being nested with respect to the multiple layers of the first coil and with respect to the multiple layers of the second coil, the third coil being electrically isolated from the second coil.
27. The balun device of claim 26 , wherein the substrate includes silicon, glass, or ceramic material for structural support.
28. The balun device of claim 26 , wherein the first, second, and third coils have a rectangular cross-section or round cross-section.
29. The balun of claim 26 , wherein the first, second, and third coils include copper or a copper alloy material.
30. The balun device of claim 26 , wherein the balun device includes dimensions less than 1.6 mm×1.0 mm×0.25 mm and operates at a range of 0.800-6.000 GHz.
31. A method of making a balun device, comprising:
forming a first coil including multiple layers in a wound configuration at different levels over a substrate;
forming a second coil including multiple layers in a wound configuration at different levels with the multiple layers of the second coil being nested with respect to the multiple layers of the first coil, the second coil being electrically isolated from the first coil; and
forming a third coil including multiple layers in a wound configuration at different levels with the multiple layers of the third coil being nested with respect to the multiple layers of the first coil and with respect to the multiple layers of the second coil, the third coil being electrically isolated from the second coil.
32. The method of claim 31 , wherein the substrate includes silicon, glass, or ceramic material for structural support.
33. The method of claim 31 , wherein the first, second, and third coils have a rectangular cross-section or round cross-section.
34. The method of claim 31 , wherein the first, second, and third coils include copper or a copper alloy material.