IP Library Granted Patent US 9,156,125
Granted Patent B2
US 9,156,125 · App. 13/444,620 · Granted Oct 13, 2015

Polishing pad with light-stable light-transmitting region

Inventor: Abaneshwar Prasad (Naperville, IL)
Assignee: Cabot Microelectronics Corporation
B24B37/205B24B37/24
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Quick Facts
Patent No.
US 9,156,125
App. No.
13/444,620
Granted
Oct 13, 2015
Kind
B2
Abstract

The invention provides a polishing pad that contains at least one light-transmitting region and optionally a polishing pad body. The light-transmitting region is composed of a material comprising (a) a polymeric resin and (b) at least one light-absorbing compound, and the light-transmitting region has a total light transmittance of about 25% or more at one or more wavelengths in a range of 250 nm to 395 nm.

Claims (55)

1. A polishing pad comprising at least one light-transmitting region, wherein the light-transmitting region is composed of a material comprising (a) a polymeric resin and (b) at least one light-absorbing compound, and wherein the light-transmitting region has a total light transmittance of 25% or more at one or more wavelengths in a range of 250 nm to 395 nm, wherein the light-transmitting region is discolored 45% or less at one or more wavelengths in a range of 395 nm to 800 nm upon ultraviolet light irradiation, as measured according to ASTM D1148-95.

2. The polishing pad of claim 1 , wherein the total light transmittance of the light-transmitting region prior to ultraviolet light irradiation differs from the total light transmittance of the light-transmitting region after ultraviolet light irradiation by 30% or less at one or more wavelengths in a range of 250 nm to 395 nm and/or 395 nm to 35,000 nm, and wherein the ultraviolet light irradiation comprises irradiating the light-transmitting region with a 100 watt mercury vapor lamp at an intensity of at least 1,000 mW/cm 2 for a duration of four minutes.

3. The polishing pad of claim 1 , wherein the light-transmitting region has a total light transmittance of 25% or more at one or more wavelengths in a range of 250 nm to 395 nm and/or 395 nm to 35,000 nm after the light-transmitting region has been exposed to ultraviolet light irradiation, and wherein the ultraviolet light irradiation comprises irradiating the light-transmitting region with a 100 watt mercury vapor lamp at an intensity of at least 1,000 mW/cm 2 for a duration of four minutes.

4. The polishing pad of claim 1 , wherein a solution consisting of the light-absorbing compound at a concentration of 10 mg/L has an absorbance of 0.5 or less in a range of 330 nm to 400 nm.

5. The polishing pad of claim 1 , wherein a solution consisting of the tight-absorbing compound does not have a maximum light absorption located in a range of 335 nm to 400 nm.

6. The polishing pad of claim 1 , wherein the light-transmitting region has a total light transmittance of 25% or more at one or more wavelengths in a range of 395 nm to 35,000 nm.

7. The polishing pad of claim 1 , wherein the light-transmitting region has a total light transmittance of 25% or more at one or more wavelengths in a range of 360 nm to 380 nm.

8. The polishing pad of claim 1 , wherein the light-transmitting region comprises 50% or more of the polishing pad by surface area.

9. The polishing pad of claim 1 , wherein the polymeric resin is a thermoplastic polymeric resin.

10. The polishing pad of claim 1 , wherein the polymeric resin comprises at least one aliphatic polymer selected from the group consisting of polyurethanes, polycarbonate-based polyurethanes, polycarbonate-based diol or triol polyurethanes, linear aliphatic polycarbonate-based polyurethanes, branched aliphatic polycarbonate-based polyurethanes, cycloalkane-based aliphatic polyurethanes, polysiloxane-based polyurethanes, (alkyl)acrylates, (alkyl)acrylic acids, polyvinylidene fluorides, polyvinylidene difluorides, polychlorotrifluoroethylenes, polysiloxanes, polycarbonates, linear aliphatic polycarbonates, polymethylpentene-1, and combinations thereof.

11. The polishing pad of claim 10 , wherein the aliphatic polymer is a thermoplastic polymer, a thermoset polymer, or any combination thereof.

12. The polishing pad of claim 11 , wherein the thermoplastic polymer is selected from the group consisting of thermoplastic polyurethanes, polycarbonate-based thermoplastic polyurethanes, cycloalkane-based thermoplastic polyurethanes, polysiloxane-based thermoplastic polyurethanes, random copolymers thereof, block copolymers thereof, and blends thereof.

13. The polishing pad of claim 10 , wherein the aliphatic polymer is a polyurethane comprising monomeric units of (a) one or more diols selected from the group consisting of a polyol, a polyol comprising cyclic aliphatic rings, a polycarbonate polyol, a polyhexamethylene carbonate diol comprising 1 to 1000 repeat units, a polyethylene ether carbonate diol comprising 1 to 1000 repeat units, 1,12-dodecanediol, 1,4-butanediol, and combinations thereof, and (b) dicyclohexylmethane 4,4′-diisocyanate.

14. The polishing pad of claim 1 , wherein the light-absorbing compound is selected from the group consisting of pentaerythritol tetrakis(2-cyano-3,3-diphenylacrylate), 2-ethylhexyl-p-methoxycinnamate, ethyl-2-cyano-3,3′-diphenylacrylate, octyl-p-methoxycinnamate, 4-aminobenzoate-trialkylorthoformate, ethyl(4-ethoxycarbonylphenyl)-N-methyl-N-phenylformamidine, N,N-bis-(4-ethoxycarbonylphenyl)-N-methylformamidine, N2-(4-ethoxycarbonylphenyl)-N1-methyl-N1-phenylformamidine, 2-hydroxy-4-n-octoxybenzophenone, 2-propenoic acid-3-(4-methoxyphenyl)-2-ethylhexyl ester, ethyl-2-cyano-3,3-diphenylacrylate, 2-ethylhexyl-3,3-diphenylacrylate, ethyl-3,3-bis(4-methoxyphenyl)acrylate, 2-ethylhexyl-2-cyano-3,3-diphenylacrylate, homomethyl salicylate, 2-phenyl-benzimidazole-5-sulphonic acid, triethyl salicylate, octyldimethyl 4-aminobenzoic acid, 4-methylbenzilidene camphor, di-2′-ethylhexyl-3,5-dimethoxy-4-hydroxy benzylidene malonate, cyanoacrylates, triazines, bis-methines, camphor derivatives, and combinations thereof.

15. The polishing pad of claim 1 , wherein the light-transmitting region has a thickness of 0.2 mm to 3 mm.

16. The polishing pad of claim 1 , wherein the light-transmitting region has one or more of the following properties:

(a) a Shore hardness of 10 A to 80 D,

(b) a porosity of 0.1% to 10%, wherein 50% or more of the pores of the light-transmitting region have a size of 1 μm or less,

(c) a % elongation of 50% or more,

(d) an ultimate tensile strength of 65 kPa or more,

(e) a flexural modulus at room temperature of 700 kPa to 3,500,000 kPa,

(f) a resin melt index or melt flow rate of less than 500 g/10 min at 2160 g load at 210° C.,

(g) a resin melt viscosity range of 10 Pa·s to 20,000 Pa·s., as measured by a capillary rheometer at a shear rate of 18/s at 210° C.,

(h) a % crystallinity of less than 30%,

(i) a glass transition temperature of about −100° C. to 160° C.,

(j) a surface roughness of 0.1 to 100 μm, and

(k) a refractive index of 1.1 to 2.0.

17. The polishing pad of claim 1 , wherein the polishing pad further comprises a polishing pad body.

18. The polishing pad of claim 17 , wherein the polishing pad body has one or more of the following properties:

(a) a Shore hardness of 10 A to 80 D,

(b) a porosity of 0.1% to 80%, wherein 50% or more of the pores of the polishing pad have a size of 200 μm or less,

(c) a % elongation of 50% or more,

(d) an ultimate tensile strength of 65 kPa or more,

(e) a flexural modulus at room temperature of 700 kPa to 3,500,000 kPa,

(f) a resin melt index or melt flow rate of less than 500 g/10 min at 2160 g load at 210° C.,

(g) a resin melt viscosity range of 10 Pa·s to 20,000 Pa·s., as measured by a capillary rheometer at a shear rate of 18/s at 210° C.,

(h) a % crystallinity of 0% to 60%,

(i) a glass transition temperature of about −100° C. to 160° C.,

(j) a surface roughness of 0.1 to 100 μm, and

(k) a refractive index of 1.1 to 2.0.

19. The polishing pad of claim 17 , wherein the light-transmitting region is attached to the polishing pad body by a process selected from the group consisting of heat-melting chemical bond fusion, ultrasonic welding, radio frequency welding, arc welding, heat compression, frictional heating, and combinations thereof.

20. The polishing pad of claim 17 , wherein the polishing pad, polishing pad body, and/or light-transmitting region is formed by film or sheet extrusion, injection molding, blow molding, thermoforming, compression molding, co-extrusion molding, reaction injection molding, profile extrusion molding, rotational molding, gas injection molding, film insert molding, foaming, casting, or any combination thereof.

21. The polishing pad of claim 1 , wherein the light-transmitting region is formed by compressing at least a portion of the polishing pad.

22. The polishing pad of claim 1 , wherein the light-absorbing compound is present in an amount of 0.05% to 20% by weight based on the weight of the light-transmitting region.

23. The polishing pad of claim 1 , wherein

the polymeric resin is an aliphatic polycarbonate-based thermoplastic polyurethane comprising monomeric units of (a) a polyakylene carbonate diol comprising 1 to 1000 repeat units, (b) an aliphatic diisocyanate, and (c) an alkyl diol different from the polyalkylene carbonate diol (a),

a solution consisting of the light-absorbing compound at a concentration of 10 mg/L has an absorbance of 0.5 or less in a range of 330 nm to 400 nm,

the light-transmitting region has a total light transmittance of 25% or more at one or more wavelengths in a range of 360 nm to 380 nm,

the light-transmitting region is discolored 45% or less at one or more wavelengths in a range of 395 nm to 800 nm upon ultraviolet light irradiation, as measured according to ASTM D1148-95, and

the light-transmitting region has a total light transmittance of 25% or more at one or more wavelengths in a range of 250 nm to 395 nm after the light-transmitting region has been exposed to ultraviolet light irradiation, and wherein the ultraviolet light irradiation comprises irradiating the light-transmitting region with a 100 watt mercury vapor lamp at an intensity of at least 1,000 mW/cm 2 for a duration of four minutes.

24. A method of polishing a workpiece comprising:

(a) providing a workpiece to be polished,

(b) contacting the workpiece with the polishing pad of claim 1 and a chemical-mechanical polishing composition, and

(c) moving the workpiece relative to the polishing pad so as to abrade at least a portion of the surface of the workpiece to polish the workpiece.

25. The method of claim 24 , wherein the method further comprises detecting a polishing endpoint in situ using light.

Assignments (10)
CHANGE OF NAME Recorded Nov 22, 2023
From: CMC MATERIALS, INC.
To: CMC MATERIALS LLC
Reel/Frame 065663/0466 →
CHANGE OF NAME Recorded Nov 8, 2023
From: CMC MATERIALS, INC.
To: CMC MATERIALS LLC
Reel/Frame 065517/0783 →
SECURITY INTEREST Recorded Jul 8, 2022
From: ENTEGRIS, INC.; ENTEGRIS GP, INC.; POCO GRAPHITE, INC.; CMC MATERIALS, INC.; INTERNATIONAL TEST SOLUTIONS, LLC; QED TECHNOLOGIES INTERNATIONAL, INC.
To: TRUIST BANK, AS NOTES COLLATERAL AGENT
Reel/Frame 060613/0072 →
SECURITY INTEREST Recorded Jul 8, 2022
From: CMC MATERIALS, INC.; INTERNATIONAL TEST SOLUTIONS, LLC; QED TECHNOLOGIES INTERNATIONAL, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 060615/0001 →
RELEASE OF SECURITY INTEREST Recorded Jul 6, 2022
From: JPMORGAN CHASE BANK, N.A.
To: CABOT MICROELECTRONICS CORPORATION; QED TECHNOLOGIES INTERNATIONAL, INC.; FLOWCHEM LLC; KMG ELECTRONIC CHEMICALS, INC.; KMG-BERNUTH, INC.; MPOWER SPECIALTY CHEMICALS LLC; SEALWELD (USA), INC.; INTERNATIONAL TEST SOLUTIONS, LLC; CMC MATERIALS, INC.
Reel/Frame 060592/0260 →
CHANGE OF NAME Recorded Jan 13, 2021
From: CABOT MICROELECTRONICS CORPORATION
To: CMC MATERIALS, INC.
Reel/Frame 054980/0681 →
RELEASE OF SECURITY INTEREST Recorded Nov 16, 2018
From: BANK OF AMERICA, N.A.
To: CABOT MICROELECTRONICS CORPORATION; QED TECHNOLOGIES INTERNATIONAL, INC.
Reel/Frame 047521/0729 →
SECURITY AGREEMENT Recorded Nov 16, 2018
From: CABOT MICROELECTRONICS CORPORATION; QED TECHNOLOGIES INTERNATIONAL, INC.; FLOWCHEM LLC; KMG ELECTRONIC CHEMICALS, INC.; MPOWER SPECIALTY CHEMICALS LLC
To: JPMORGAN CHASE BANK, N.A.
Reel/Frame 047588/0263 →
INTELLECTUAL PROPERTY SECURITY AGREEMENT SUPPLEMENT Recorded Dec 23, 2013
From: CABOT MICROELECTRONICS CORPORATION
To: BANK OF AMERICA, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 031868/0561 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 18, 2013
From: PRASAD, ABANESHWAR
To: CABOT MICROELECTRONICS CORPORATION
Reel/Frame 029658/0628 →
Continuity (1)
Related Publication 20130273813A1 · Oct 17, 2013