IP Library › Granted Patent US 10,347,606
Granted Patent B2
US 10,347,606 · App. 15/990,055 · Granted Jul 9, 2019

Devices employing thermal and mechanical enhanced layers and methods of forming same

Inventors: Chen-Hua Yu (Hsinchu, TW); An-Jhih Su (Taoyuan, TW); Wei-Yu Chen (New Taipei, TW); Ying-Ju Chen (Tuku Township, TW); Tsung-Shu Lin (New Taipei, TW); Chin-Chuan Chang (Zhudong Township, TW); Hsien-Wei Chen (Hsinchu, TW); Wei-Cheng Wu (Hsinchu, TW); Li-Hsien Huang (Zhubei, TW); Chi-Hsi Wu (Hsinchu, TW); Der-Chyang Yeh (Hsinchu, TW)
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
H01L25/0657H01L21/486H01L21/4853H01L21/56H01L21/78H01L23/3114H01L23/49811H01L23/49827H01L23/49838H01L25/0652H01L25/50H01L2224/04105H01L2224/12105H01L2224/18H01L2224/32225H01L2224/32245H01L2224/73267H01L2224/97H01L2225/06527H01L2225/06548H01L2225/06555H01L2924/3511
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Quick Facts
Patent No.
US 10,347,606
App. No.
15/990,055
Granted
Jul 9, 2019
Kind
B2
Abstract

A method includes attaching a first-level device die to a dummy die, encapsulating the first-level device die in a first encapsulating material, forming through-vias over and electrically coupled to the first-level device die, attaching a second-level device die over the first-level device die, and encapsulating the through-vias and the second-level device die in a second encapsulating material. Redistribution lines are formed over and electrically coupled to the through-vias and the second-level device die. The dummy die, the first-level device die, the first encapsulating material, the second-level device die, and the second encapsulating material form parts of a composite wafer.

Claims (47)

1. A package comprising:

a dummy die;

an adhesive film over and contacting the dummy die;

a first-level device die over and attached to the dummy die through the adhesive film;

a first encapsulating material encapsulating the first-level device die;

a second-level device die over the first-level device die;

a plurality of through-vias overlapping and electrically connecting to the first-level device die, wherein the plurality of through-vias are at a same level as the second-level device die;

a second encapsulating material encapsulating the second-level device die and the plurality of through-vias therein; and

redistribution lines over and electrically coupling to the plurality of through-vias and the second-level device die.

2. The package of claim 1 , wherein the dummy die comprises a silicon plate.

3. The package of claim 1 , wherein the dummy die comprises a metal plate.

4. The package of claim 1 , wherein the adhesive film comprises a first edge and a second edge, with the first edge and the second edge being opposite edges of the adhesive film, and the first edge and the second edge are flush with a third edge and a fourth edge, respectively, of the first-level device die.

5. The package of claim 1 , wherein the first encapsulating material comprises a portion encircling the dummy die, and the portion of the first encapsulating material is level with the dummy die.

6. The package of claim 1 further comprising:

a dielectric layer overlapping the first-level device die and the first encapsulating material, wherein the dielectric layer separates the first encapsulating material from the second encapsulating material.

7. A package comprising:

a rigid dummy die;

a first die-attach film and a second die-attach film over the rigid dummy die;

a first device die and a second device die attached to the rigid dummy die through the first die-attach film and the second die-attach film, respectively;

a first encapsulating material encapsulating the first device die, the second device die, and the rigid dummy die therein;

a dielectric layer overlapping the first device die, the second device die, and the first encapsulating material;

a third device die over the dielectric layer, wherein the third device die comprises a first portion overlapping a portion of the first device die, and a second portion overlapping a portion of the second device die; and

a second encapsulating material encapsulating the third device die therein.

8. The package of claim 7 further comprising:

a through-via penetrating through the dielectric layer and the second encapsulating material, wherein the through-via has a bottom surface contacting a top surface of an electrical connector in the first device die.

9. The package of claim 8 , wherein a top surface of the through-via is substantially coplanar with a top surface of the second encapsulating material.

10. The package of claim 7 further comprising a second dielectric layer overlapping and contacting a top surface of the second encapsulating material and a top surface of the third device die.

11. The package of claim 7 , wherein the first encapsulating material further encapsulates the first die-attach film and the second die-attach film therein.

12. The package of claim 7 , wherein the rigid dummy die comprises silicon, and the rigid dummy die has no active devices therein.

13. The package of claim 7 further comprising:

a fourth device die overlapping a first portion of the third device die;

a third encapsulating material encapsulating the fourth device die therein; and

an additional through-via overlapping a second portion of the third device die, and the additional through-via penetrates through the third encapsulating material.

14. The package of claim 7 , wherein the first encapsulating material extends to a level lower than a bottom surface of the rigid dummy die.

15. A package comprising:

a blank die free from active devices, passive devices, and conductive lines therein;

a first device die over and attached to the blank die through an adhesive film, wherein the first device die comprises a conductive pillar;

a first encapsulating material encapsulating the first device die therein;

a dielectric layer comprising a bottom surface contacting a top surface of the first device die and a top surface of the first encapsulating material;

a second encapsulating material over the dielectric layer; and

a through-via penetrating through the second encapsulating material and the dielectric layer to contact the conductive pillar of the first device die.

16. The package of claim 15 , wherein the blank die extends beyond edges of the first device die.

17. The package of claim 16 , wherein edges of the blank die are flush with respective edges of the first encapsulating material and the second encapsulating material.

18. The package of claim 15 , wherein the adhesive film is encapsulated in, and is in contact with, the second encapsulating material.

19. The package of claim 15 further comprising:

a second device die encapsulated in the second encapsulating material, wherein the second device die overlaps a first portion of the first device die, and the second encapsulating material and the through-via overlap a second portion of the first device die.

20. The package of claim 1 , wherein the first encapsulating material physically contacts the adhesive film.

Continuity (3)
Division 15058818 · Mar 2, 2016
Provisional Application 62275550 · Jan 6, 2016
Related Publication 20180277520A1 · Sep 27, 2018
Cited By (18)
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