Logic drive using standard commodity programmable logic IC chips comprising non-volatile random access memory cells
A field-programmable-gate-array (FPGA) integrated-circuit (IC) chip configured to perform a logic function based on a look-up table (LUT), includes: multiple non-volatile memory cells therein configured to store multiple resulting values of the look-up table (LUT); and a programmable logic block therein having multiple static-random-access-memory (SRAM) cells configured to store the resulting values passed from the non-volatile memory cells, wherein the programmable logic block is configured to select, in accordance with one of the combinations of its inputs, one from the resulting values stored in the static-random-access-memory (SRAM) cells into its output.
1 . A multichip package comprising:
a first interconnection scheme;
a first metal bump under and coupling to the first interconnection scheme, wherein the first metal bump comprises a first tin-containing solder bump;
a first chip-on-chip package over and coupling to the first interconnection scheme, wherein the first chip-on-chip package comprises:
a first integrated-circuit (IC) chip comprising a first silicon substrate, a first through silicon via (TSV) vertically in the first silicon substrate, a first transistor at a top of the first silicon substrate and a second interconnection scheme over the first silicon substrate,
a second integrated-circuit (IC) chip over and bonded to the first integrated-circuit (IC) chip, wherein the second integrated-circuit (IC) chip comprises a second silicon substrate, a second transistor at a bottom of the second silicon substrate and a third interconnection scheme under the second silicon substrate, and
a second metal bump at a bottom of the first chip-on-chip package and bonded to the first interconnection scheme, wherein the second metal bump comprises a second tin-containing solder bump; and
a second chip-on-chip package at a same horizontal level as the first chip-on-chip package and over and coupling to the first interconnection scheme, wherein the second chip-on-chip package comprises:
a third integrated-circuit (IC) chip comprising a third silicon substrate, a second through silicon via (TSV) vertically in the third silicon substrate, a third transistor at a bottom of the third silicon substrate and a fourth interconnection scheme under the third silicon substrate,
a fourth integrated-circuit (IC) chip over and bonded to the third integrated-circuit (IC) chip, wherein the fourth integrated-circuit (IC) chip comprises a fourth silicon substrate, a fourth transistor at a bottom of the fourth silicon substrate and a fifth interconnection scheme under the fourth silicon substrate, and
a third metal bump at a bottom of the second chip-on-chip package and bonded to the first interconnection scheme, wherein the third metal bump comprises a third tin-containing solder bump.
2 . The multichip package of claim 1 , wherein the first interconnection scheme comprises:
a first polymer layer,
a first interconnection metal layer having a first portion in a first opening in the first polymer layer, wherein the first portion of the first interconnection metal layer has a bottom surface coplanar with a bottom surface of the first polymer layer, wherein the first interconnection metal layer comprises a copper layer having a first portion in the first opening;
a second interconnection metal layer over the first polymer layer and first interconnection metal layer; and
a second polymer layer on the second interconnection metal layer and at a top of the first interconnection scheme.
3 . The multichip package of claim 2 , wherein the first interconnection metal layer further has a second portion on a top surface of the first polymer layer and coupling to the first portion of the first interconnection metal layer and wherein the copper layer of the first interconnection metal layer further has a second portion over the top surface of the first polymer layer and coupling to the first portion of the copper layer.
4 . The multichip package of claim 3 , wherein the first interconnection metal layer of the first interconnection scheme further comprises an adhesion metal layer having a first portion at a bottom and a sidewall of the first portion of the copper layer and a second portion at a bottom of the second portion of the copper layer and on the top surface of the first polymer layer, wherein the first portion of the adhesion metal layer has a bottom surface coplanar with the bottom surface of the first polymer layer and in contact with a top of the first metal bump.
5 . The multichip package of claim 1 , wherein the first interconnection scheme comprises:
an interconnection metal layer;
a polymer layer on the interconnection metal layer and at a top of the first interconnection scheme, wherein a first opening in the polymer layer is vertically over a top surface of a first metal pad of the interconnection metal layer and a second opening in the polymer layer is vertically over a top surface of a second metal pad of the interconnection metal layer;
a third metal pad in the first opening and on a top surface of the polymer layer, wherein the second metal bump is bonded to the third metal pad; and
a fourth metal pad in the second opening and on the top surface of the first polymer layer, wherein the third metal bump is bonded to the fourth metal pad.
6 . The multichip package of claim 5 , wherein each of the third and fourth metal pads comprises a copper layer and an adhesion metal layer at a bottom of the copper layer of said each of the third and fourth metal pads, wherein the copper layer of the third metal pad is at a same horizontal level as the copper layer of the fourth metal pad, wherein the adhesion metal layer of the third metal pad is on the top surface of the first metal pad and the top surface of the polymer layer and between the copper layer of the third metal pad and the top surface of the first metal pad and the adhesion metal layer of the fourth metal pad is on the top surface of the second metal pad and the top surface of the polymer layer and between the copper layer of the fourth metal pad and the top surface of the second metal pad.
7 . The multichip package of claim 6 , wherein the copper layer has a thickness between 1 and 15 micrometers.
8 . The multichip package of claim 6 , wherein each of the third and fourth metal pads further comprises a nickel layer on the copper layer of said each of the third and fourth metal pads.
9 . The multichip package of claim 8 , wherein the nickel layer has a thickness between 0.5 and 3 micrometers.
10 . The multichip package of claim 1 further comprising a sealing layer on the first interconnection scheme and at the same horizontal level as the first and second chip-on-chip packages.
11 . The multichip package of claim 10 , wherein the sealing layer comprises a molding compound.
12 . The multichip package of claim 1 further comprising:
a ball-grid-array (BGA) substrate under the first interconnection scheme and first metal bump, wherein the ball-grid-array (BGA) substrate comprises a metal pad at a top of the ball-grid-array (BGA) substrate and joining the first metal bump;
an underfill between the first interconnection scheme and ball-grid-array (BGA) substrate and in contact with a sidewall of the first metal bump; and
a plurality of solder balls on a bottom surface of the ball-grid-array (BGA) substrate and at a bottom of the multichip package.
13 . The multichip package of claim 1 further comprising an underfill between the first interconnection scheme and first chip-on-chip package and in contact with a sidewall of the second metal bump.
14 . The multichip package of claim 1 , wherein the second metal bump is on a bottom surface of the first through silicon via (TSV).
15 . The multichip package of claim 1 , wherein the second tin-containing solder bump is under a copper layer of the second metal bump.
16 . The multichip package of claim 1 , wherein the third metal bump is on a bottom surface of the third integrated-circuit (IC) chip.
17 . The multichip package of claim 1 , wherein the third tin-containing solder bump is under a copper layer of the third metal bump.
18 . The multichip package of claim 1 , wherein the first integrated-circuit (IC) chip comprises a fourth metal bump at a top of the second interconnection scheme and the second integrated-circuit (IC) chip comprises a fifth metal bump at a bottom of the third interconnection scheme, wherein the fourth metal bump is bonded to the fifth metal bump, wherein the fourth metal bump comprises a copper layer and the fifth metal bump comprises tin.
19 . The multichip package of claim 1 , wherein the second integrated-circuit (IC) chip comprises a metal contact at its bottom and bonded to the first integrated-circuit (IC) chip, wherein the metal contact comprises a copper layer.
20 . The multichip package of claim 1 , wherein the third integrated-circuit (IC) chip comprises a fourth metal bump on a top surface of the second through silicon via (TSV) and the fourth integrated-circuit (IC) chip comprises a fifth metal bump at a bottom of the fifth interconnection scheme, wherein the fourth metal bump is bonded to the fifth metal bump, wherein the fourth metal bump comprises a copper layer and the fifth metal bump comprises tin.
21 . The multichip package of claim 1 , wherein the fourth integrated-circuit (IC) chip comprises a fourth metal bump at its bottom and bonded to the third integrated-circuit (IC) chip, wherein the fourth metal bump comprises tin.
22 . The multichip package of claim 1 , wherein the first integrated-circuit (IC) chip is a logic chip.
23 . The multichip package of claim 1 , wherein the fourth integrated-circuit (IC) chip is a memory chip.
24 . The multichip package of claim 1 , wherein the third integrated-circuit (IC) chip is a control chip.
25 . The multichip package of claim 1 , wherein the third integrated-circuit (IC) chip is a memory control chip and the fourth integrated-circuit (IC) chip is a dynamic random-access memory (DRAM) chip.