Semiconductor device including via structure and method for manufacturing the same
A semiconductor device according to some example embodiments includes a substrate, an insulating structure covering the substrate, a transistor between the substrate and the insulating structure, a via insulating layer extending through the insulating structure and the substrate, a plurality of via structures extending through the via insulating layer, a plurality of conductive structures respectively connected to the plurality of via structures, and a plurality of bumps respectively connected to the conductive structures.
1. A semiconductor device comprising:
a substrate;
an insulating structure covering the substrate;
a transistor between the substrate and the insulating structure;
a via insulating layer extending through the insulating structure and the substrate;
a plurality of via structures extending through the via insulating layer and surrounded by the via insulating layer;
a plurality of conductive structures respectively connected to the plurality of via structures; and
a plurality of bumps respectively connected to the conductive structures,
wherein an upper surface of the via insulating layer is arranged at a same level as an upper surface of the substrate.
2. The semiconductor device according to claim 1 , wherein a bottom surface of the via insulating layer is coplanar with a bottom surface of the insulating structure.
3. The semiconductor device according to claim 1 , wherein each of the plurality of via structures comprises a conductive layer and a barrier layer surrounding the conductive layer.
4. The semiconductor device according to claim 1 , further comprising:
a first insulating layer covering the substrate,
wherein top surfaces of the plurality of via structures are coplanar with a top surface of the first insulating layer.
5. The semiconductor device according to claim 1 , wherein,
the insulating structure comprises a second insulating layer covering the transistor, and a mask layer covering the second insulating layer, and
bottom surfaces of the plurality of via structures are coplanar with a bottom surface of the mask layer.