Current source inverter using bidirectional switches with bidirectional power flow capability
A switching circuit includes a reverse-voltage-blocking (RB) commutation switch, a first inverter leg, and a second inverter leg. The first inverter leg includes a first dual-gate bidirectional (DGBD) and a second DGBD switch connected in series. The second inverter leg includes a third and a fourth DGBD switch connected in series. A pair of the first DGBD switch, the second DGBD switch, the third DGBD switch, and the fourth DGBD switch that are in different inverter legs of the first inverter leg and the second inverter leg are configured to switch between a first DGBD on-state and a second DGBD on-state when in an inverting operating mode. A current with a positive or a negative polarity is conducted when in the first DGBD on-state. When in the second DGBD on-state, a reverse voltage is blocked by and a current with a positive polarity is conducted through the respective DGBD switch.
1. A switching circuit for a current source inverter comprising:
a reverse-voltage-blocking (RB) commutation switch;
a first inverter leg comprising
a first dual-gate bidirectional (DGBD) switch; and
a second DGBD switch connected in series with the first DGBD switch; and
a second inverter leg comprising
a third DGBD switch; and
a fourth DGBD switch connected in series with the third DGBD switch, wherein the RB commutation switch, the first inverter leg, and the second inverter leg are connected in parallel between a first bus line and a second bus line, wherein a pair of switches comprising a first switch selected from the first DGBD switch or the second DGBD switch of the first inverter leg and a second switch selected from the third DGBD switch or the fourth DGBD switch of the second inverter leg are configured to switch between a first DGBD on-state and a second DGBD on-state when in an inverting operating mode, and wherein the pair of switches comprises a first pair of switches and a second pair of switches; and
a controller configured to:
select the first pair of switches from different inverter legs of the first inverter leg and the second inverter leg for switching between the first DGBD on-state and the second DGBD on-state during a first time period of a switching cycle;
select the second pair of switches from the different inverter legs of the first inverter leg and the second inverter leg for switching between the first DGBD on-state and the second DGBD on-state during a second time period of the switching cycle that immediately follows completion of the first time period, wherein the second pair of switches includes a single switch from the first pair of switches and a single switch from an inverter leg not included in the first pair of switches;
control a switching state of each DGBD switch of the first to the fourth DGBD switches, wherein the switching state is selected from the first DGBD on-state, the second DGBD on-state, and a DGBD off-state; and
control switching between an on-state and an off-state of the RB commutation switch, wherein the RB commutation switch is in the on-state during a transition time period initiated prior to the completion of the first time period and stopped after a start of the second time period,
wherein, when in the first DGBD on-state, a current with a positive polarity or a negative polarity is conducted through a respective DGBD switch of the first to the fourth DGBD switches, and
wherein, when in the second DGBD on-state, a reverse voltage is blocked by the respective DGBD switch of the first to the fourth DGBD switches, and the current with the positive polarity is conducted through the respective DGBD switch of the first to the fourth DGBD switches.
2. The switching circuit of claim 1 , wherein the RB commutation switch comprises:
a semiconductor switch comprising
a first RB terminal;
a second RB terminal; and
a third RB terminal, wherein, when an RB on-state signal is sent to the first RB terminal, a first current is conducted from the second RB terminal to the third RB terminal; and
a diode, wherein an anode of the diode is connected to the third RB terminal.
3. The switching circuit of claim 2 , wherein the semiconductor switch is a type of semiconductor selected from the group consisting of a metal-oxide-semiconductor field-effect transistor and a high electron mobility transistor.
4. The switching circuit of claim 1 , wherein the RB commutation switch comprises:
a bidirectional (BD) switch configured to switch between a BD on-state and a BD off-state, wherein when in the BD on-state, a reverse voltage is blocked by the BD switch, and a second current with the positive polarity is conducted through the BD switch, wherein when in the BD off-state, the second current is not conducted through the BD switch.
5. The switching circuit of claim 1 , wherein the first DGBD switch, the second DGBD switch, the third DGBD switch, and the fourth DGBD switch include a transistor selected from the group consisting of a gallium nitride high electron mobility transistor and a silicon-carbide metal-oxide-semiconductor field-effect transistor.
6. The switching circuit of claim 1 , wherein the first DGBD switch comprises:
a first semiconductor comprising
a first terminal;
a second terminal; and
a third terminal; and
a second semiconductor comprising
a fourth terminal;
a fifth terminal; and
a sixth terminal;
wherein the first semiconductor is connected anti-series to the second semiconductor.
7. The switching circuit of claim 6 , wherein the second terminal is connected to the fifth terminal.
8. The switching circuit of claim 6 , wherein, when in the first DGBD on-state, the current with the positive polarity is conducted from the first terminal to the fourth terminal through the second terminal and the fifth terminal, and the current with the negative polarity is conducted from the fourth terminal to the first terminal through the fifth terminal and the second terminal.
9. The switching circuit of claim 6 , wherein, when an on-state signal is sent to the third terminal and an on-state signal is sent to the sixth terminal, the first DGBD switch is in the first DGBD on-state.
10. The switching circuit of claim 6 , wherein, when an on-state signal is sent to the third terminal and an off-state signal is sent to the sixth terminal, the first DGBD switch is in the second DGBD on-state.
11. The switching circuit of claim 1 , wherein the RB commutation switch is in the off-state when the first DGBD switch, the second DGBD switch, the third DGBD switch, or the fourth DGBD switch is in the first DGBD on-state.
12. The switching circuit of claim 1 , wherein the first DGBD switch, the second DGBD switch, the third DGBD switch, and the fourth DGBD switch are configured to switch between the first DGBD on-state and the DGBD off-state when in a regenerating operating mode, wherein, when in the DGBD off-state, the current is not conducted through the respective DGBD switch of the first to the fourth DGBD switches.
13. The switching circuit of claim 12 , wherein the controller is further configured to control the RB commutation switch to the on-state when in the regenerating operating mode.
14. The switching circuit of claim 13 , wherein the controller is further configured to control switching between the first DGBD on-state and the DGBD off-state for each DGBD switch of the first to the fourth DGBD switches when in the regenerating operating mode.
15. The switching circuit of claim 1 , further comprising:
a third inverter leg comprising
a fifth DGBD switch; and
a sixth DGBD switch connected in series with the fifth DGBD switch,
wherein the third inverter leg is connected in parallel between the first bus line and the second bus line,
wherein the fifth DGBD switch and the sixth DGBD switch are configured to switch between the first DGBD on-state and the second DGBD on-state when in the inverting operating mode,
wherein the first switch and the second switch of the pair of switches that are selected from different inverter legs of the first inverter leg, the second inverter leg, and the third inverter leg are configured to switch between the first DGBD on-state and the second DGBD on-state when in the inverting operating mode.
16. The switching circuit of claim 15 , wherein the controller is further configured to:
select the first pair of switches from the different inverter legs of the first inverter leg, the second inverter leg, and the third inverter leg for switching between the first DGBD on-state and the second DGBD on-state during the first time period of the switching cycle; and
select the second pair of switches from the different inverter legs of the first inverter leg, the second inverter leg, and the third inverter leg for switching between the first DGBD on-state and the second DGBD on-state during the second time period of the switching cycle that immediately follows completion of the first time period.
17. The switching circuit of claim 1 , wherein the controller is further configured to control the switching from the second DGBD on-state to the first DGBD on-state during the first time period and the second time period when the RB commutation switch is in the off-state.