Method for manufacturing semiconductor device
A method for manufacturing a semiconductor device is provided. The method includes forming a trench in a substrate; disposing an upper gate electrode in the trench; disposing a first dielectric layer on the upper gate electrode in the trench; and disposing a capping layer on the first dielectric layer in the trench.
1. A method of manufacturing a semiconductor device, comprising:
forming a trench in a substrate;
disposing an upper gate electrode in the trench;
disposing a first dielectric layer on the upper gate electrode in the trench;
disposing a capping layer on the first dielectric layer in the trench;
disposing a material of the capping layer on the first dielectric layer; and
partially removing the material of the capping layer to expose a portion of the first dielectric layer.
2. The method of claim 1 , further comprising:
forming a lower barrier layer in the trench; and
disposing a lower gate electrode on the lower barrier layer in the trench.
3. The method of claim 2 , further comprising:
disposing a second dielectric layer on the lower gate electrode in the trench.
4. The method of claim 3 , further comprising:
forming an upper barrier layer between the upper gate electrode and the second dielectric layer.
5. The method of claim 3 , further comprising:
disposing a material of the upper gate electrode on the second dielectric layer; and
partially removing the material of the upper gate electrode to exposed a portion of the second dielectric layer.
6. The method of claim 5 , wherein the first dielectric layer contacts the portion of the second dielectric layer.