IP Library › Granted Patent US 12,367,332
Granted Patent B2
US 12,367,332 · App. 17/877,952 · Granted Jul 22, 2025

Mixed poly pitch design solution for power trim

Inventors: Shih-Wei Peng (Hsinchu, TW); Lipen Yuan (Hsinchu County, TW); Jiann-Tyng Tzeng (Hsinchu, TW); Wei-Cheng Lin (Taichung, TW)
Assignee: Taiwan Semiconductor Manufacturing Company Limited
G06F30/392G06F30/398G06F2119/06
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Quick Facts
Patent No.
US 12,367,332
App. No.
17/877,952
Granted
Jul 22, 2025
Kind
B2
Abstract

An integrated circuit with mixed poly pitch cells with a plurality of different pitch sizes is disclosed. The integrated circuit includes: at least a minimum unit each with at least a first number of first poly pitch cells with a first pitch size, and a second number of second poly pitch cells with a second pitch size, the first pitch size PP is different from the second pitch size PP1, the greatest common divisor of the first pitch size PP and the second pitch size PP1 is GCD, wherein GCD is an integer greater than 1; a gate length of the first pitch size is Lg; a gate length of the second pitch size is Lg1; Lg and Lg1 are capable of being extended to achieve G-bias for power and speed optimization of the minimum unit and the integrated circuit.

Claims (31)

1. An integrated circuit layout comprising:

a plurality of units, each unit including:

a pair of first gates having a first pitch size and a first gate length; and

a pair of second gates having a second pitch size greater than the first pitch size and a second gate length greater than the first gate length, wherein each second gate is extending from a respective first gate.

2. The integrated circuit layout of claim 1 , wherein each unit further includes a third gate having the first gate length and the first gates are between the second gates and the third gate.

3. The integrated circuit layout of claim 1 , wherein each unit further includes a third gate having the second gate length and the first gates are between the second gates and the third gate.

4. The integrated circuit layout of claim 1 , wherein the adjacent first and second gates have the first pitch size.

5. The integrated circuit layout of claim 1 , wherein the adjacent first and second gates have the second pitch size.

6. The integrated circuit of claim 1 , wherein the first and second gates have a first height, wherein each unit further includes:

a pair of third gates, each third gate extending from a respective first gate; and

a pair of fourth gates, each fourth gate extending from a respective second gate, wherein the third and fourth gates have a second height different from the first height.

7. An integrated circuit layout comprising:

a plurality of units, each unit including:

three first gates having a first pitch size and a first gate length; and

a second gate having a second gate length greater than the first gate length, wherein the second gate is extending from one of the first gates.

8. The integrated circuit layout of claim 7 , wherein each unit further includes a third gate having the first gate length and the first gates are between the second gate and the third gate.

9. The integrated circuit layout of claim 7 , wherein each unit further includes a third gate having the second gate length and the first gates are between the second gate and the third gate.

10. The integrated circuit layout of claim 9 , wherein the adjacent first and third gates have the first pitch size.

11. The integrated circuit layout of claim 9 , wherein the adjacent first and third gates have the second pitch size.

12. The integrated circuit layout of claim 8 , wherein the adjacent first and second gates have the first pitch size.

13. The integrated circuit layout of claim 8 , wherein the adjacent first and second gates have the second pitch size.

14. An integrated circuit layout comprising:

a plurality of units, each unit including:

a first gate having a first gate length; and

three second gates having a second pitch size greater than the first pitch size and a second gate length greater than the first gate length, wherein at least one of the second gates is extending from the first gate.

15. The integrated circuit layout of claim 14 , wherein each unit further comprising a third gate having the first gate length and the first gate is between the second gates and the third gate.

16. The integrated circuit layout of claim 14 , wherein each unit further comprising a third gate having the second gate length and the first gate is between the second gates and the third gate.

17. The integrated circuit layout of claim 16 , wherein the first and third gates have the first pitch size.

18. The integrated circuit layout of claim 16 , wherein the first and third gates have the second pitch size.

19. The integrated circuit layout of claim 14 , wherein the adjacent first and second gates have the first pitch size.

20. The integrated circuit layout of claim 14 , wherein the adjacent first and second gates have the second pitch size.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 1, 2022
From: PENG, SHIH-WEI; YUAN, LIPEN; TZENG, JIANN-TYNG; LIN, WEI-CHENG
To: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
Reel/Frame 061034/0226 →
Continuity (2)
Division 16925483 · Jul 10, 2020
Related Publication 20220382956A1 · Dec 1, 2022
References Cited (41)
US 7492013B2 · Correale, Jr. · 2009 [cited by examiner]
US 8719754B1 · Ginetti · 2014 [cited by examiner]
US 8823064B2 · Chang · 2014 [cited by examiner]
US 8863048B1 · Gerousis · 2014 [cited by examiner]
US 8863063B2 · Becker · 2014 [cited by examiner]
US 9269815B2 · Cai · 2016 [cited by examiner]
US 9449986B1 · Yoon · 2016 [cited by examiner]
US 10546956B2 · Zhang · 2020 [cited by examiner]
US 10978437B2 · Holland · 2021 [cited by examiner]
US 20040083440A1 · Houston · 2004 [cited by examiner]
US 20050198604A1 · Yoshida · 2005 [cited by examiner]
US 20060195810A1 · Morton · 2006 [cited by examiner]
US 20070004147A1 · Toubou · 2007 [cited by examiner]
US 20090114952A1 · Correale, Jr. · 2009 [cited by examiner]
US 20100164614A1 · Hou · 2010 [cited by examiner]
US 20130256797A1 · Chang · 2013 [cited by examiner]
US 20140084374A1 · Huang · 2014 [cited by examiner]
US 20140183646A1 · Hatamian · 2014 [cited by examiner]
US 20150026657A1 · Fu · 2015 [cited by examiner]
US 20150121329A1 · Fu · 2015 [cited by examiner]
US 20150301973A1 · Rim · 2015 [cited by examiner]
US 20160163454A1 · Iwama · 2016 [cited by examiner]
US 20160300005A1 · Yang · 2016 [cited by examiner]
US 20180068050A1 · Lin · 2018 [cited by examiner]
US 20180151561A1 · Cantoro · 2018 [cited by examiner]
US 20190147133A1 · Lin · 2019 [cited by examiner]
US 20190287967A1 · Liaw · 2019 [cited by examiner]
US 20190288690A1 · Yeap · 2019 [cited by examiner]
US 20200074043A1 · Chang · 2020 [cited by examiner]
US 20200098920A1 · Chafik · 2020 [cited by examiner]
US 20200104445A1 · Peng · 2020 [cited by examiner]
US 20200380191A1 · MacRae · 2020 [cited by examiner]
US 20200411500A1 · Holland · 2020 [cited by examiner]
US 20210313319A1 · Sue · 2021 [cited by examiner]
US 20210384127A1 · Peng · 2021 [cited by examiner]
CN 106449628B · 2021 [cited by examiner]
CN 113392614A · 2021 [cited by examiner]
EP 3079172A1 · 2016 [cited by examiner]
FR 2994506A1 · 2014 [cited by examiner]
WO WO198001859A1 · 1980 [cited by applicant]
WO WO8001859A1 · 1980 [cited by examiner]