Granted Patent B2

US 12,612,303 · App. 18/100,846 · Granted Apr 28, 2026

Inventors: Xin Zhang (Acton, MA); Jianglong Zhang (Vienna, VA); Li Chen (Belmont, MA); John C. Cowles (Beaverton, OR); Michael Judy (Ipswich, MA); Shafi Saiyed (Lynnfield, MA)

Assignee: Analog Devices, Inc.

B81B7/0048B81B7/008B81C1/00666H10W42/121H10W70/611H10W70/635H10W90/00H10W90/401

Abstract

Claims (33)

1 . A 3D heterogeneous packaged device, comprising:

a device die; and

an interposer coupled with the device die at a plurality of bond points, the interposer comprising a plurality of stress isolation platforms at different locations from the plurality of bond points, wherein a first stress isolation platform of the plurality of stress isolation platforms is flexibly coupled to the interposer by a stress isolation suspension that is formed between two or more trenches that extend across an entire thickness of the interposer.

2 . The 3D heterogeneous packaged device of claim 1 , wherein the first stress isolation platform of the plurality of stress isolation platforms is coupled to a remainder of the interposer at least in part by the stress isolation suspension.

3 . The 3D heterogeneous packaged device of claim 1 , wherein the plurality of bond points are a first plurality of bond points, and wherein the 3D heterogeneous packaged device further comprises a substrate coupled with the interposer at a second plurality of bond points aligned with the plurality of stress isolation platforms, wherein the interposer is disposed between the device die and the substrate.

4 . The 3D heterogeneous packaged device of claim 3 , wherein the device die is an integrated circuit die and the substrate is a printed circuit board, silicon substrate, silicon carbide substrate, silicon germanium substrate, gallium arsenide substrate, gallium nitride substrate, glass substrate, ceramic substrate, or laminate substrate.

5 . The 3D heterogeneous packaged device of claim 3 , wherein the device die is an integrated circuit (IC) die, a microelectromechanical systems (MEMS) die, a sensor die, an optical die, a magnetic sensor die, a biosensor die, a microfluidics die), or a combination thereof.

6 . The 3D heterogeneous packaged device of claim 3 , wherein the device die is a first device die, and wherein the 3D heterogeneous packaged device further comprises a second device die coupled with the first device die in a vertical stack, with the interposer representing a bottom layer of the vertical stack, the first device die positioned above the interposer as a second layer of the vertical stack, and the second device die positioned above the first device die as a third layer of the vertical stack.

7 . The 3D heterogeneous packaged device of claim 1 , wherein the interposer comprises an outer portion and an inner portion, and wherein the plurality of stress isolation platforms are formed only at the outer portion of the interposer.

8 . A 3D heterogeneous packaged device, comprising:

a substrate;

an interposer, bonded to the substrate, comprising:

a plurality of stress isolation platforms, at least one of the plurality of stress isolation platforms defining a portion of the interposer that is flexibly coupled to a remainder of the interposer by a plurality of stress isolation suspensions; and

a bond pad formed in the at least one of the plurality of stress isolation platforms;

a bond, in contact with the bond pad, coupling the interposer to the substrate; and

a device die coupled to the interposer, wherein the interposer is disposed between the device die and the substrate.

9 . The 3D heterogeneous packaged device of claim 8 , wherein at least eight stress isolation suspensions flexibly couple the at least one of the plurality of stress isolation platforms to the remainder of the interposer.

10 . The 3D heterogeneous packaged device of claim 8 , wherein at least one of the plurality of stress isolation suspensions is formed between a pair of trenches that extend across an entire thickness of the interposer.

11 . The 3D heterogeneous packaged device of claim 8 , wherein the interposer comprises an outer portion and an inner portion, and wherein the plurality of stress isolation platforms are formed only at the outer portion of the interposer.

12 . The 3D heterogeneous packaged device of claim 8 , wherein the device die comprises a MEMS device and the interposer defines a cavity aligned with the MEMS device.

13 . The 3D heterogeneous packaged device of claim 8 , wherein the interposer further comprises a thru silicon via (TSV) electrically coupling the bond pad to the device die.

14 . The 3D heterogeneous packaged device of claim 8 , wherein the device die is a first device die, and wherein the 3D heterogeneous packaged device further comprises a second device die bonded to the first device die so that the first device die is between the interposer and the second device die.

15 . The 3D heterogeneous packaged device of claim 8 , wherein the substrate comprises a laminate substrate bonded to a printed circuit board.

16 . A method for fabricating a 3D heterogeneous packaged device, comprising:

bonding an interposer to a device die;

patterning the interposer with a plurality of bond pads;

forming, at different locations from the plurality of bond pads, a plurality of stress isolation platforms by etching a plurality of trenches through the interposer so that at least one of the plurality of stress isolation platforms includes a bond pad of the plurality of bond pads; and

with the interposer bonded to the device die, bonding the interposer to a substrate so that the interposer is between the device die and the substrate,

wherein a first stress isolation platform of the plurality of stress isolation platforms is flexibly coupled to the interposer by a stress isolation suspension that is formed between two or more trenches of the plurality of trenches that extend across an entire thickness of the interposer.

17 . The method of claim 16 , further comprising filling the plurality of trenches with gel.

18 . The method of claim 16 , further comprising forming a plurality of thru silicon vias (TSVs) through the interposer, wherein bonding the interposer to the device die comprises electrically coupling the device die to the TSVs.

19 . The method of claim 16 , wherein the device die comprises a MEMS device, wherein the method further comprises etching a cavity through the interposer, wherein bonding the interposer to the device die comprises aligning the MEMS device to the cavity.

20 . The method of claim 16 , wherein etching the plurality of trenches through the interposer comprises etching the plurality of trenches through the entire thickness of the interposer.

Assignments (1)

Continuity (2)

References Cited (255)