Granted Patent B2

US 12,562,638 · App. 18/175,240 · Granted Feb 24, 2026

Inventors: David Paul Buehler (Noblesville, IN); Kevin M. Gertiser (Carmel, IN); David W. Ihms (Kokomo, IN); Mark Wendell Gose (Kokomo, IN)

Assignee: BorgWarner US Technologies LLC

H05K7/20927H05K7/20254H05K7/209B60L3/003B60L15/007B60L15/08B60L15/20B60L50/40B60L50/51B60L50/60B60L50/64B60L53/20B60L53/22B60L53/62B60L2210/30B60L2210/40B60L2210/42B60L2210/44B60L2240/36B60R16/02G01R15/20G06F1/08G06F13/4004G06F2213/40H01L23/15H01L23/3672H01L23/3735H01L2023/405H01L2023/4087H01L23/473H01L23/5383H01L24/32H01L24/33H01L25/072H01L25/50H01L2224/32225H01L2224/32245H01L2224/33181H02J7/0063H02J2207/20H02M1/0009H02M1/08H02M1/084H02M1/088H02M1/123H02M1/32H02M1/322H02M1/327H02M1/4258H02M1/44H02M3/33523H02M7/003H02M7/537H02M7/5387H02M7/53871H02M7/53875H02M7/5395H02P27/06H02P27/08H02P27/085H02P29/024H02P29/027H02P29/68H02P2207/05H03K19/20H05K1/145H05K1/181H05K1/182H05K5/0247H05K7/2039H05K2201/042H05K2201/10166H10D64/018

Abstract

Claims (29)

1 . A power module, comprising:

a first substrate having an outer surface and an inner surface;

a semiconductor die electrically coupled to the inner surface of the first substrate;

a second substrate having an outer surface and an inner surface, the semiconductor die being electrically coupled to the inner surface of the second substrate, wherein the second substrate includes a middle section between the inner surface and the outer surface, wherein the middle section includes a ceramic and the outer surface and the inner surface of the second substrate include a metal; and

a flex circuit electrically coupled to the semiconductor die, wherein the flex circuit is electrically insulated from the inner surface of the first substrate and the inner surface of the second substrate.

2 . The power module of claim 1 , wherein the flex circuit is coupled to the inner surface of the second substrate.

3 . The power module of claim 1 , wherein the flex circuit includes an insulating material and an electrically conductive material, wherein the inner surface of the second substrate is electrically insulated from the electrically conductive material of the flex circuit.

4 . The power module of claim 3 , wherein the electrically conductive material of the flex circuit is coupled to the semiconductor die.

5 . The power module of claim 3 , wherein the semiconductor die includes a gate, wherein the electrically conductive material of the flex circuit is coupled to the gate of the semiconductor die.

6 . The power module of claim 1 , wherein the semiconductor die is coupled to the second substrate, through the flex circuit.

7 . The power module of claim 6 , wherein the semiconductor die includes a source connection, wherein the source connection is coupled to the second substrate, through the flex circuit.

8 . The power module of claim 1 , wherein the semiconductor die includes a gate, wherein electrical connections to the gate are contained only within the flex circuit.

9 . The power module of claim 1 , wherein the semiconductor die includes a gate, wherein electrical connections to the gate, within the power module, are contained solely within the flex circuit.

10 . The power module of claim 1 , wherein the semiconductor die includes a gate, wherein electrical connections to the gate, within the power module, do not extend through any part of the second substrate.

11 . The power module of claim 1 , wherein the first substrate further includes a middle section between the inner surface and the outer surface, wherein the middle section includes a ceramic and the outer surface and the inner surface of the first substrate include a metal.

12 . The power module of claim 11 , wherein the ceramic include silicon nitride.

13 . The power module of claim 1 , further include a first lead coupled to the inner surface of the second substrate.

14 . The power module of claim 1 , wherein the semiconductor die includes a drain, wherein the drain is coupled to the inner surface of the first substrate.

15 . The power module of claim 1 , wherein the semiconductor die includes a source, wherein the source is coupled to the inner surface of the second substrate.

16 . An inverter, comprising the power module of claim 1 .

17 . A vehicle, comprising the inverter of claim 16 .

18 . A power module, comprising:

a semiconductor die having a source connection, a drain connection, and a gate;

a substrate electrically coupled to the source connection, wherein the substrate has an outer surface and an inner surface, the semiconductor die being electrically coupled to the inner surface of the substrate, wherein the substrate includes a middle section between the inner surface and the outer surface, and wherein the middle section includes a ceramic and the outer surface and the inner surface of the substrate include a metal; and

a flex circuit electrically coupled to the gate, wherein electrical connections to the gate, within the power module, are contained solely within the flex circuit.

19 . A power module, comprising:

a semiconductor die having a source connection, a drain connection, and a gate;

a substrate electrically coupled to the source connection, wherein the substrate has an outer surface and an inner surface, the semiconductor die being electrically coupled to the inner surface of the substrate, wherein the substrate includes a middle section between the inner surface and the outer surface, and wherein the middle section includes a ceramic and the outer surface and the inner surface of the substrate include a metal; and

a flex circuit electrically coupled to the gate, wherein electrical connections to the gate, within the power module, do not extend through any part of the substrate.

Assignments (2)

Continuity (5)

References Cited (307)