IP Library › Granted Patent US 12,388,049
Granted Patent B2
US 12,388,049 · App. 18/360,749 · Granted Aug 12, 2025

High connectivity device stacking

Inventors: Kurtis Leschkies (San Jose, CA); Han-Wen Chen (Cupertino, CA); Steven Verhaverbeke (San Francisco, CA); Giback Park (San Jose, CA); Kyuil Cho (Santa Clara, CA); Jeffrey L. Franklin (Albuquerque, NM); Wei-Sheng Lei (San Jose, CA)
Assignee: Applied Materials, Inc.
H01L25/0657H01L23/49586H01L23/5226H01L25/50H05K1/144
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Quick Facts
Patent No.
US 12,388,049
App. No.
18/360,749
Granted
Aug 12, 2025
Kind
B2
Abstract

The present disclosure generally relates to stacked miniaturized electronic devices and methods of forming the same. More specifically, embodiments described herein relate to semiconductor device spacers and methods of forming the same. The semiconductor device spacers described herein may be utilized to form stacked semiconductor package assemblies, stacked PCB assemblies, and the like.

Claims (28)

1. A semiconductor device assembly, comprising:

a first printed circuit board (PCB) comprising:

a first glass fiber reinforced epoxy resin material; and

a first electrical distribution layer formed on the first glass fiber reinforced epoxy resin material;

a second PCB comprising:

a second glass fiber reinforced epoxy resin material; and

a second electrical distribution layer formed on the second glass fiber reinforced epoxy resin material; and

a device spacer interposed between the first PCB and the second PCB to facilitate a physical space therebetween, the device spacer further comprising:

a frame having a first surface opposite a second surface, the frame further comprising:

a frame material comprising a polymer-based dielectric material having ceramic filler particles; and

a via comprising a via surface that defines an opening extending through the frame from the first surface to the second surface, the via having a first diameter of about 10 μm and about 150 μm;

an electrical interconnection disposed within the via on the via surface to form at least part of a conductive path extending between at least a portion of the first and second electrical distribution layers; and

solder bumps conductively coupling the electrical interconnection with the first and second electrical distribution layers.

2. The semiconductor device assembly of claim 1 , wherein the ceramic filler particles comprise silica particles having a maximum diameter of about 0.6 μm.

3. The semiconductor device assembly of claim 2 , wherein a packing density of the silica particles is between about 0.5 and about 0.95 by volume.

4. The semiconductor device assembly of claim 1 , wherein the frame has a thickness between about 400 μm and about 1600 μm.

5. The semiconductor device assembly of claim 1 , wherein the solder bumps have a maximum height of about 50 μm.

6. The semiconductor device assembly of claim 1 , further comprising an encapsulation material substantially surrounding the solder bumps.

7. The semiconductor device assembly of claim 1 , wherein a ratio of an area of the device spacer relative to an area of a surface of the first or second PCB is between about 0.15 and about 0.85.

8. The semiconductor device assembly of claim 1 , further comprising a silicon substrate comprising a silicon core structure, the silicon core structure having a thickness less than 1000 μm.

9. The semiconductor device assembly of claim 8 , wherein the second electrical distribution layer is formed on the silicon core structure and surrounds the silicon core structure.

10. The semiconductor device assembly of claim 1 , wherein the frame further comprises a lateral dimension that is less than a lateral dimension of the first PCB and the second PCB.

11. The semiconductor device assembly of claim 1 , further comprising a barrier layer lining the via surface and disposed between the via surface and the electrical interconnection.

12. The semiconductor device assembly of claim 11 , wherein the barrier layer comprises molybdenum.

13. The semiconductor device assembly of claim 1 , wherein the via is tapered from a second diameter to the first diameter.

14. The semiconductor device assembly of claim 13 , wherein the second diameter is between about 0 μm and about 100 μm.

15. The semiconductor device assembly of claim 1 , wherein the device spacer further comprises an array of vias defining openings extending through the frame from the first surface to the second surface.

16. The semiconductor device assembly of claim 15 , wherein a pitch between each via of the array of vias is between about 150 μm and about 600 μm.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 28, 2023
From: LESCHKIES, KURTIS; CHEN, HAN-WEN; VERHAVERBEKE, STEVEN; PARK, GIBACK; CHO, KYUIL; FRANKLIN, JEFFREY L.; LEI, WEI-SHENG
To: APPLIED MATERIALS, INC.
Reel/Frame 064413/0874 →
Continuity (3)
Division 17578271 · Jan 18, 2022
Division 16814785 · Mar 10, 2020
Related Publication 20240021582A1 · Jan 18, 2024
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