Methods of fabricating OLED panel with inorganic pixel encapsulating barrier
Embodiments described herein relate to sub-pixel circuits and methods of forming sub-pixel circuits that may be utilized in a display such as an organic light-emitting diode (OLED) display. The device includes a plurality of sub-pixels, each sub-pixel of the plurality of sub-pixels defined by adjacent pixel-defining layer (PDL) structures with inorganic overhang structures disposed on the PDL structures, each sub-pixel having an anode, organic light-emitting diode (OLED) material disposed on the anode, and a cathode disposed on the OLED material. The device is made by a process including the steps of: depositing the OLED material and the cathode by evaporation deposition, and depositing an encapsulation layer disposed over the cathode.
1. A device, comprising:
a substrate;
overhang structures disposed over the substrate, the overhang structures having a bottommost surface having a bottom width less than a top width of a top surface, the overhang structures comprising a conductive material;
an organic light-emitting diode (OLED) material disposed:
on the top surface of the overhang structures;
on a sidewall of the overhang structures adjacent to the top surface; and
between adjacent overhang structures;
a cathode disposed:
on the OLED material on the top surface of the overhang structures; and
over a sidewall of the overhang structures, the cathode having:
a lower portion disposed along the sidewall adjacent to the bottommost surface with an endpoint before the top surface of the overhang structures; and
an upper portion disposed along the sidewall adjacent to the top surface of the overhang structures; and
between the adjacent overhang structures; and
an encapsulation layer disposed:
over the cathode over the top surface of the overhang structures;
along the sidewall of the overhang structures; and
between the adjacent overhang structures, the encapsulation layer separates the OLED material and the cathode adjacent to the top surface of the overhang structures from the OLED material and the cathode between the adjacent overhang structures, wherein the encapsulation layer contacts the sidewall of the overhang structures between the lower portion of the cathode along the sidewall of the overhang structures and the upper portion of the cathode on the OLED material disposed adjacent to the top surface of the overhang structures.
2. The device of claim 1 , wherein the conductive material includes a metal-containing material.
3. The device of claim 2 , wherein the metal-containing material includes copper, titanium, aluminum, molybdenum, silver, indium tin oxide, indium zinc oxide, or combinations thereof.
4. The device of claim 1 , wherein the OLED material comprises a hole injection layer (HIL), a hole transport layer (HTL), an emissive layer (EML), and an electron transport layer (ETL).
5. The device of claim 1 , wherein the substrate is a pre-patterned indium tin oxide (ITO) glass substrate.
6. The device of claim 1 , further comprising a global passivation layer disposed over the overhang structures and the encapsulation layer.
7. A device, comprising:
a substrate;
overhang structures disposed over the substrate, the overhang structures having a bottommost surface having a bottom width less than a top width of a top surface, the overhang structures comprising a conductive material;
an organic light-emitting diode (OLED) material, the OLED material having:
a first portion disposed over and adjacent to the top surface of the overhang structures; and
a second portion disposed between adjacent overhang structures;
a cathode, the cathode having:
a third portion disposed over the OLED material on the top surface of the overhang structures;
a fourth portion disposed between the adjacent overhang structures and over a sidewall of the overhang structures, the cathode having a portion disposed along the sidewall adjacent to the bottommost surface with an endpoint before the top surface of the overhang structures; and
a fifth portion disposed along the sidewall adjacent to the top surface of the overhang structures; and
an encapsulation layer disposed:
over the cathode over the top surface of the overhang structures;
along the sidewall of the overhang structures, the encapsulation layer along the sidewall separates the first portion of the OLED material and the third portion of the cathode from the second portion of the OLED material and the fourth portion of the cathode, wherein the encapsulation layer contacts the sidewall of the overhang structures between the fourth portion of the cathode and the fifth portion of the cathode on the OLED material adjacent to the top surface of the overhang structures; and
between the adjacent overhang structures.
8. The device of claim 7 , wherein the conductive material includes a metal-containing material.
9. The device of claim 8 , wherein the metal-containing material includes copper, titanium, aluminum, molybdenum, silver, indium tin oxide, indium zinc oxide, or combinations thereof.
10. The device of claim 7 , wherein the OLED material comprises a hole injection layer (HIL), a hole transport layer (HTL), an emissive layer (EML), and an electron transport layer (ETL).
11. The device of claim 7 , wherein the substrate is a pre-patterned indium tin oxide (ITO) glass substrate.
12. The device of claim 7 , further comprising a global passivation layer disposed over the overhang structures and the encapsulation layer.
13. A device, comprising:
a substrate;
overhang structures disposed over the substrate, the overhang structures having a bottommost surface having a bottom width less than a top width of a top surface, the overhang structures comprising a conductive material;
an organic light-emitting diode (OLED) material disposed:
on the top surface of the overhang structures;
along a portion of a sidewall of the overhang structures; and
between adjacent overhang structures;
a cathode disposed:
on the OLED material on the top surface of the overhang structures;
along a lower portion of the sidewall of the overhang structures adjacent to the bottommost surface with an endpoint before the top surface of the overhang structures, and along an upper portion disposed along the sidewall adjacent to the top surface of the overhang structures; and
between the adjacent overhang structures; and
an encapsulation layer disposed:
over the cathode over the top surface of the overhang structures;
along the sidewall of the overhang structures; and
between the adjacent overhang structures, the encapsulation layer separates the OLED material and the cathode over the top surface of the overhang structures from the OLED material and the cathode between the adjacent overhang structures, wherein the encapsulation layer contacts the sidewall of the overhang structures between the lower portion of the cathode along the sidewall of the overhang structures and the upper portion of the cathode on the OLED material disposed adjacent to the top surface of the overhang structures.
14. The device of claim 13 , wherein the conductive material includes copper, titanium, aluminum, molybdenum, silver, indium tin oxide, indium zinc oxide, or combinations thereof.