MEMS resonator
Multiple degenerately-doped silicon layers are implemented within resonant structures to control multiple orders of temperature coefficients of frequency.
1 . A method of fabricating an integrated circuit, the method comprising:
forming a microelectromechanical systems (MEMS) device so as to have a first layer of silicon, a second layer of silicon, and a layer of piezoelectric material;
wherein:
at least one of the first layer of silicon or the second layer of silicon is both degenerately doped and to serve as an electrode during operation of the MEMS device;
the MEMS device has a body that is to deflect or vibrate during operation of the integrated circuit, the body having a shape that is symmetric about at least one anchor point of the MEMS device;
the MEMS device is to, during operation of the integrated circuit, output a signal representing sensed deflection or vibration of the body;
a ratio between (1) a thickness of the piezoelectric material, and (2) a thickness of at least one of the first layer of silicon or the second layer of silicon is selected such that a maximum variation of vibration frequency of the body, within a predetermined temperature range, lies within a threshold, and such that a nonlinear contribution of the piezoelectric material to variation in the vibration frequency is of opposite polarity relative to a nonlinear contribution of the one of the first layer of silicon or the second layer of silicon to variation in the vibration frequency, for a majority of the predetermined temperature range; and
forming further comprises encapsulating the MEMS device within the integrated circuit; and
subjecting the MEMS device to a post-encapsulation tuning process, in which the body is heated, and in which the deflection or vibration of the body is measured, so as to adjust, dependent on the tuning process, at least one temperature-dependent characteristic of the MEMS device.
2 . The method of claim 1 wherein the electrode is a first electrode and wherein forming the MEMS device further comprises depositing a metal layer, the metal layer to serve as a second electrode during operation of the integrated circuit.
3 . The method of claim 2 wherein forming the MEMS device is performed such that the layer of piezoelectric material lies in between the first electrode and the second electrode.
4 . The method of claim 1 wherein the nonlinear contribution comprises a cubic temperature coefficient of frequency (TCF) term.
5 . The method of claim 1 wherein forming further comprises doping in-situ the at least one of the first layer or the second layer with phosphorus, using a drive-in doping process, in a manner that results in a gradient of dopant concentration along at least one dimension of the at least one of the first layer of silicon or the second layer of silicon.
6 . The method of claim 5 wherein the at least one of the first layer or the second layer primarily comprises polycrystal silicon.
7 . The method of claim 6 wherein:
the forming is performed such that the body is supported by the integrated circuit via a tether, the tether also being formed to have the first layer of silicon, the second layer of silicon, and the layer of piezoelectric material; and
the subjecting comprises applying joule-heating to the MEMS device, via the tether, so as to modify one or more temperature-dependent characteristics of the MEMS device, without dimensionally-modifying the body.
8 . The method of claim 1 wherein the piezoelectric material comprises lithium niobate.
9 . The method of claim 1 wherein the method further comprises forming at least one temperature sensor as an embedded part of the integrated circuit, and wherein subjecting further comprises measuring a temperature of the MEMS device while being heated during the post-encapsulation tuning process, wherein further, the subjecting is dependent on the measuring of the temperature during the post-encapsulation tuning process.
10 . The method of claim 1 wherein the piezoelectric material comprises aluminum nitride.
11 . The method of claim 1 wherein the predetermined temperature range encompasses a range of minus 45 degrees Celsius to plus 85 degrees Celsius.
12 . The method of claim 11 wherein the threshold is less than or equal to one part per million (PPM).
13 . The method of claim 1 wherein the MEMS device is a resonator.
14 . The method of claim 13 wherein the method further comprises forming timing signal generation circuitry as part of the integrated circuit and wherein the timing signal generation circuitry is operable to generate at least one clock signal, dependent on a resonance frequency of the MEMS device, during operation of the integrated circuit.
15 . The method of claim 14 wherein the method further comprises forming at least one temperature sensor as an embedded part of the integrated circuit, and wherein the timing signal generation circuitry comprises circuitry operable to regulate a frequency of the at least one clock signal, such that the at least one timing signal exhibits a proportional variation in frequency as a function of change in temperature, within the predetermined temperature range, that is less than the maximum variation in the vibration frequency within the predetermined temperature range.
16 . The method of claim 15 wherein the resonator is a first MEMS resonator, wherein forming the at least one temperature sensor comprises forming a second MEMS resonator, and wherein operation of the temperature sensor is dependent on a sensed resonance frequency of the first MEMS resonator and a sensed resonance frequency of the second MEMS resonator.
17 . The method of claim 15 wherein the forming is performed such that the body exhibits two simultaneous and disparate temperature-dependent resonance modes, and wherein the circuitry operable to regulate the frequency is to do so in response to temperature-dependent differential in a behavior of the two simultaneous and disparate temperature-dependent resonance modes.
18 . The method of claim 1 wherein forming comprises fabricating the MEMS device so as to, during operation of the integrated circuit, supply a bias voltage to the MEMS device, and wherein the circuitry to regulate the frequency is operable to regulate the bias voltage as a function of the change in temperature.
19 . The method of claim 1 wherein the ratio is such that the thickness of the layer of piezoelectric material is at least three times greater than the thickness of the at least one of the first layer of silicon or the second layer of silicon.
20 . The method of claim 19 wherein the thickness of the layer of piezoelectric material is less than one micron and wherein the thickness of the layer of piezoelectric material is at least ten times greater than at least one of: (1) thickness of the first layer of silicon or (2) thickness of the second layer of silicon.
21 . The method of claim 1 wherein forming is performed such that the body is oblong along a length dimension, and is anchored to the integrated circuit by two anchor points which are arranged on opposite sides of the body along a width dimension of the body, the width dimension being orthogonal to the length dimension.
22 . The method of claim 1 wherein the body comprises at least two plates which are each coupled to each other and to the at least one anchor point via a beam.
23 . The method of claim 22 wherein the body comprises four plates which are arranged about the at least one anchor point, in a cross pattern.
24 . The method of claim 1 wherein forming comprises using a vent-release process, in which the MEMS device is freed from a buried oxide, so as to be capable of the moving or deflecting during operation of the integrated circuit, by etching a buried oxide through release vents, and wherein the encapsulating comprises sealing the release vents, following use of the vent release process, relative to an atmosphere external to the integrated circuit.
25 . A method of fabricating an oscillator integrated circuit, the method comprising:
forming a microelectromechanical systems (MEMS) resonator so as to have a body having a first layer of silicon, a second layer of silicon, and a layer of piezoelectric material;
wherein:
at least one of the first layer of silicon or the second layer of silicon is both degenerately doped and to serve as an electrode during operation of the MEMS device;
the body that is to deflect or vibrate during operation of the integrated circuit, the body having a shape that is symmetric about at least one anchor point of the MEMS device;
the MEMS device is to, during operation of the integrated circuit, output a signal representing sensed deflection or vibration of the body;
a ratio between (1) a thickness of the piezoelectric material, and (2) a thickness of at least one of the first layer of silicon or the second layer of silicon is selected such that a maximum variation of vibration frequency of the body, within a predetermined temperature range, lies within a threshold, and such that a nonlinear contribution of the piezoelectric material to variation in the vibration frequency is of opposite polarity relative to a nonlinear contribution of the one of the first layer of silicon or the second layer of silicon to variation in the vibration frequency, for a majority of the predetermined temperature range; and
forming further comprises encapsulating the MEMS device within the integrated circuit; and
subjecting the MEMS device to a post-encapsulation tuning process, in which the body is heated, and in which the deflection or vibration of the body is measured, so as to adjust, dependent on the tuning process, at least one temperature-dependent characteristic of the MEMS device.
26 . The method of claim 25 wherein the predetermined temperature range encompasses a range of minus 45 degrees Celsius to plus 85 degrees Celsius, wherein the maximum variation of the vibration frequency of the body within the predetermined temperature range is less than one part per million (PPM), and wherein at least one of the first layer or the second layer comprises primarily single-crystal silicon.