Granted Patent B2

US 12,564,086 · App. 18/674,629 · Granted Feb 24, 2026

Inventor: Cyprian Emeka Uzoh (San Jose, CA)

Assignee: Adeia Semiconductor Technologies LLC

H01L24/81H01L24/11H01L24/13H01L24/16H01L24/17H01L24/80H01L24/83H01L25/0657H01L25/50H01L2224/03009H01L2224/0401H01L2224/05571H01L2224/05572H01L2224/05605H01L2224/05609H01L2224/05611H01L2224/05616H01L2224/05639H01L2224/05644H01L2224/05684H01L2224/11009H01L2224/11464H01L2224/13018H01L2224/13019H01L2224/13084H01L2224/13562H01L2224/13564H01L2224/13655H01L2224/13684H01L2224/13686H01L2224/13805H01L2224/13809H01L2224/13811H01L2224/13844H01L2224/13847H01L2224/13855H01L2224/16148H01L2224/16238H01L2224/16265H01L2224/16268H01L2224/16501H01L2224/2919H01L2224/80357H01L2224/80895H01L2224/80896H01L2224/81026H01L2224/81065H01L2224/81099H01L2224/81193H01L2224/8181H01L2224/83026H01L2224/83815H01L2225/06513H01L2924/01013H01L2924/01028H01L2924/01029H01L2924/01031H01L2924/01047H01L2924/01049H01L2924/0105H01L2924/01074H01L2924/01079H01L2924/01082H01L2924/014H01L2924/19041H01L2924/19043H01L2924/19104H01L2924/3841

Abstract

Claims (35)

1 . A bonded structure, comprising:

a first component including a substrate having a first dielectric surface and a first conductive feature at the first dielectric surface, the first conductive feature comprising a first barrier layer thereover; and

a second component including a substrate having a second dielectric surface and a second conductive feature at the second dielectric surface, the second conductive feature comprising a second barrier layer thereover, wherein:

the first dielectric surface is directly bonded to the second dielectric surface without an underfill, and

the first conductive feature is bonded to the second conductive feature by way of a conductive bond region comprising copper, the first barrier layer being between the conductive bond region and the first conductive feature, and the second barrier layer being between the conductive bond region and the second conductive feature.

2 . The bonded structure of claim 1 , wherein the first conductive feature and the second conductive feature each comprise copper.

3 . The bonded structure of claim 1 , wherein the bond region comprises structural evidence of conductive nanoparticles employed in bonding the first conductive feature to the second conductive feature.

4 . The bonded structure of claim 3 , wherein side surfaces of the bond region are more rough than side surfaces of the first and second conductive features.

5 . The bonded structure of claim 1 , further comprising microvoids within the bond region.

6 . The bonded structure of claim 5 , wherein the microvoids have a maximum width below 0.5 micron.

7 . The bonded structure of claim 5 , wherein each microvoid of the microvoids within the bond region is less than 5% of a cross-sectional area of the bond region.

8 . The bonded structure of claim 5 , wherein a total area of cross sections of the microvoids within a cross section of the bond region is less than 10% of an area of the bond region at the cross section.

9 . The bonded structure of claim 1 , wherein the first and second barrier layers each comprise a barrier metal.

10 . The bonded structure of claim 9 , wherein the barrier metal comprises nickel or a nickel alloy.

11 . The bonded structure of claim 1 , wherein first substrate comprises a first array of the first conductive feature and the second substrate comprises a second array of the second conductive feature, wherein the first conductive features of the first array are bonded to the second conductive features of the second array.

12 . A bonded structure, comprising:

a first component including a first substrate having a first dielectric surface and a first conductive feature at the first dielectric surface; and

a second component including a second substrate having a second dielectric surface and a second conductive feature at the second dielectric surface, wherein:

the first dielectric surface is directly bonded to the second dielectric surface without an underfill, and

the first conductive feature is bonded to second conductive feature by way of a conductive bond interface between the first and second conductive features, wherein the bond interface comprises structural evidence of conductive nanoparticles employed in bonding the first conductive feature to the second conductive feature, the conductive nanoparticles having long dimensions smaller than 100 nanometers.

13 . The bonded structure of claim 12 , wherein the first and second conductive features comprise copper.

14 . The bonded structure of claim 13 , wherein the bond interface defines a metallurgical joint between the first and second conductive features.

15 . The bonded structure of claim 13 , further comprising a first barrier layer on the first conductive feature and a second barrier layer on the second conductive features, wherein the bond interface is confined between the first and second barrier layers in a direction normal to the first and second dielectric surfaces.

16 . The bonded structure of claim 15 , wherein the first and second barrier layers each comprises a barrier metal.

17 . The bonded structure of claim 15 , wherein the first and second barrier layers each comprises a layer of nanoparticles.

18 . The bonded structure of claim 12 , wherein the first conductive feature and the second conductive feature include conductive nanoparticles diffused from the bond interface.

19 . The bonded structure of claim 18 , wherein the conductive nanoparticles are smaller than grains of the first and second conductive features.

20 . The bonded structure of claim 18 , wherein the conductive nanoparticles comprise a different material from a remainder of the first and second conductive features.

21 . The bonded structure of claim 12 , wherein side surfaces of the bond interface are more rough than side surfaces of the first and second conductive features.

22 . The bonded structure of claim 21 , wherein a roughness of the side surfaces of the bond interface is greater than about 3.0 nm.

23 . The bonded structure of claim 12 , wherein the bond region comprises microvoids.

24 . The bonded structure of claim 23 , wherein the microvoids have a maximum width below 0.2 micron.

25 . The bonded structure of claim 23 , wherein each microvoid of the microvoids within the bond region is less than 1% of a cross-sectional area of the bond interface.

26 . The bonded structure of claim 23 , wherein a total area of cross sections of the microvoids within a cross section of the bond interface is less than 5% of an area of the bond interface at the cross section.

27 . The bonded structure of claim 12 , wherein the first substrate comprises a plurality of the first conductive feature and the second substrate comprises a plurality of the second conductive feature, wherein the first conductive features are bonded to the second conductive features by a plurality of the conductive bond interface, and wherein thicknesses of the conductive bond interfaces vary by between about 0.5 microns and 3 microns.

Assignments (4)

Continuity (6)

References Cited (400)