Method to produce 3D semiconductor devices and structures with memory
A method for producing a 3D semiconductor device, the method comprising: providing a first level, said first level comprising a first single crystal layer; forming first alignment marks and control circuits in and/or on said first level, wherein said control circuits comprise first single crystal transistors, and wherein said control circuits comprise at least two interconnection metal layers; forming at least one second level disposed on top of said control circuits; performing a first etch step into said second level; and performing additional processing steps to form a plurality of first memory cells within said second level, wherein each of said memory cells comprise at least one second transistors, and wherein said additional processing steps comprise depositing a gate electrode for said second transistors.
1. A method for producing a 3D semiconductor device, the method comprising:
providing a first level, said first level comprising a first single crystal layer;
forming first alignment marks and control circuits in and/or on said first level,
wherein said control circuits comprise first single crystal transistors, and
wherein said control circuits comprise at least two interconnection metal layers;
forming at least one second level disposed on top of said control circuits;
performing a first etch step into said second level; and
performing additional processing steps to form a plurality of first memory cells within said second level,
wherein each of said memory cells comprise at least one second transistors, and
wherein said additional processing steps comprise depositing a gate electrode for said second transistors.
2. The method according to claim 1 , further comprising:
processing said first memory cells into a NAND nonvolatile type memory.
3. The method according to claim 1 ,
wherein said second level comprises at least two overlaying layers.
4. The method according to claim 1 ,
wherein said first etch step comprises performing a lithography step aligned to said first alignment marks.
5. The method according to claim 1 ,
wherein said performing additional processing steps comprises using Atomic Layer Deposition (ALD).
6. The method according to claim 1 , further comprising:
processing a second etch step to open lithography windows to underlying alignment marks.
7. The method according to claim 1 ,
wherein said forming control circuits comprises using a weaker anneal process in consideration of subsequent thermal processing.
8. A method for producing a 3D semiconductor device, the method comprising:
providing a first level, said first level comprising a first single crystal layer;
forming first alignment marks and control circuits in and/or on said first level,
wherein said control circuits comprise first single crystal transistors, and
wherein said control circuits comprise at least two interconnection metal layers;
forming at least one second level disposed on top of said control circuits;
performing a first etch step into said second level; and
performing additional processing steps to form a plurality of first memory cells within said second level,
wherein each of said memory cells comprise at least one second transistor,
wherein said performing additional processing steps comprises using Atomic Layer Deposition (ALD), and
wherein said additional processing steps comprise depositing a gate electrodes for said second transistors.
9. The method according to claim 8 , further comprising:
processing said first memory cells into a NAND nonvolatile type memory.
10. The method according to claim 8 ,
wherein said second level comprises at least two overlaying layers.
11. The method according to claim 8 ,
wherein said first etch step comprises performing a lithography step aligned to said first alignment marks.
12. The method according to claim 8 , further comprising:
forming at least one pair of bonded layers,
wherein said bonded comprises oxide to oxide bonds.
13. The method according to claim 8 , further comprising:
processing a second etch step to open lithography windows to underlying alignment marks.
14. The method according to claim 8 ,
wherein said forming control circuits comprises using a weaker anneal process in consideration of subsequent thermal processing.
15. A method for producing a 3D semiconductor device, the method comprising:
providing a first level, said first level comprising a first single crystal layer;
forming first alignment marks and control circuits in and/or on said first level,
wherein said control circuits comprise first single crystal transistors, and
wherein said control circuits comprise at least two interconnection metal layers;
forming at least one second level disposed on top of said control circuits;
performing a first etch step into said second level; and
performing additional processing steps to form a plurality of first memory cells within said second level,
wherein each of said memory cells comprise at least one second transistor,
wherein said forming control circuits comprises using a weaker anneal process in consideration of subsequent thermal processing, and
wherein said additional processing steps comprise depositing a gate electrode for said second transistors.
16. The method according to claim 15 , further comprising:
processing said first memory cells into a NAND nonvolatile type memory.
17. The method according to claim 15 ,
wherein said second level comprises at least two overlaying layers.
18. The method according to claim 15 , further comprising:
forming at least one pair of bonded layers,
wherein said bonded comprises oxide to oxide bonds.
19. The method according to claim 15 , further comprising:
processing a second etch step to open lithography windows to underlying alignment marks.
20. The method according to claim 15 ,
wherein said performing additional processing steps comprises using Atomic Layer Deposition (ALD).