Transistor and display device
It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided.
1. A display device comprising a pixel portion, the pixel portion comprising:
a transistor comprising:
a gate electrode;
a first insulating layer over the gate electrode;
an oxide semiconductor layer over the first insulating layer, the oxide semiconductor layer comprising a channel formation region;
a second insulating layer over and in contact with the oxide semiconductor layer, the second insulating layer overlapping with the channel formation region;
a source electrode over and in contact with a first region of the oxide semiconductor layer; and
a drain electrode over and in contact with a second region of the oxide semiconductor layer;
a capacitor;
a light-emitting element electrically connected to the transistor, the light-emitting element comprising:
a first electrode;
an EL layer over the first electrode; and
a second electrode over the EL layer;
a color filter under the first electrode; and
a third insulating layer in contact with a side surface and a top surface of the oxide semiconductor layer,
wherein the oxide semiconductor layer comprises indium, gallium, and zinc,
wherein the second insulating layer is different from the third insulating layer,
wherein each of the second insulating layer and the third insulating layer comprises silicon oxide,
wherein resistance of the channel formation region is higher than resistance of the first region,
wherein the resistance of the channel formation region is higher than resistance of the second region,
wherein the second insulating layer comprises a region overlapping with the capacitor, and
wherein the first electrode comprises a region overlapping with the channel formation region and the capacitor.
2. The display device according to claim 1 , wherein each of the source electrode and the drain electrode comprises copper.
3. The display device according to claim 1 , wherein the color filter is provided between the oxide semiconductor layer and the first electrode.
4. The display device according to claim 1 , wherein the first electrode comprises a region overlapping with the source electrode and the drain electrode.
5. The display device according to claim 1 , wherein the oxide semiconductor layer comprises a crystalline region.
6. A display device comprising a pixel portion, the pixel portion comprising:
a transistor comprising:
a gate electrode;
a first insulating layer over the gate electrode;
an oxide semiconductor layer over the first insulating layer, the oxide semiconductor layer comprising a channel formation region;
a second insulating layer over and in contact with the oxide semiconductor layer, the second insulating layer overlapping with the channel formation region;
a source electrode over and in contact with a first region of the oxide semiconductor layer; and
a drain electrode over and in contact with a second region of the oxide semiconductor layer;
a capacitor;
a light-emitting element electrically connected to the transistor, the light-emitting element comprising:
a first electrode;
an EL layer over the first electrode; and
a second electrode over the EL layer;
a color filter under the first electrode; and
a third insulating layer in contact with a side surface and a top surface of the oxide semiconductor layer,
wherein the oxide semiconductor layer comprises indium, gallium, and zinc,
wherein the second insulating layer is different from the third insulating layer,
wherein each of the second insulating layer and the third insulating layer comprises silicon oxide,
wherein resistance of the channel formation region is higher than resistance of the first region,
wherein the resistance of the channel formation region is higher than resistance of the second region,
wherein the second insulating layer comprises a region overlapping with the capacitor,
wherein the first electrode comprises a region overlapping with the channel formation region and the capacitor, and
wherein the capacitor comprises the first insulating layer as a dielectric.
7. The display device according to claim 6 , wherein each of the source electrode and the drain electrode comprises copper.
8. The display device according to claim 6 , wherein the color filter is provided between the oxide semiconductor layer and the first electrode.
9. The display device according to claim 6 , wherein the first electrode comprises a region overlapping with the source electrode and the drain electrode.
10. The display device according to claim 6 , wherein the oxide semiconductor layer comprises a crystalline region.
11. A display device comprising a pixel portion, the pixel portion comprising:
a transistor comprising:
a gate electrode;
a first insulating layer over the gate electrode;
an oxide semiconductor layer over the first insulating layer, the oxide semiconductor layer comprising a channel formation region;
a second insulating layer over and in contact with the oxide semiconductor layer, the second insulating layer overlapping with the channel formation region;
a source electrode over and in contact with a first region of the oxide semiconductor layer; and
a drain electrode over and in contact with a second region of the oxide semiconductor layer;
a capacitor;
a light-emitting element electrically connected to the transistor, the light-emitting element comprising:
a first electrode;
an EL layer over the first electrode; and
a second electrode over the EL layer;
a color filter under the first electrode; and
a third insulating layer in contact with a side surface and a top surface of the oxide semiconductor layer,
wherein the oxide semiconductor layer comprises indium, gallium, and zinc,
wherein the second insulating layer is different from the third insulating layer,
wherein each of the second insulating layer and the third insulating layer comprises silicon oxide,
wherein a carrier concentration of the first region is higher than a carrier concentration of the channel formation region,
wherein a carrier concentration of the second region is higher than the carrier concentration of the channel formation region,
wherein the second insulating layer comprises a region overlapping with the capacitor, and
wherein the first electrode comprises a region overlapping with the channel formation region and the capacitor.
12. The display device according to claim 11 , wherein each of the source electrode and the drain electrode comprises copper.
13. The display device according to claim 11 , wherein the color filter is provided between the oxide semiconductor layer and the first electrode.
14. The display device according to claim 11 , wherein the first electrode comprises a region overlapping with the source electrode and the drain electrode.
15. The display device according to claim 11 , wherein the oxide semiconductor layer comprises a crystalline region.
16. A display device comprising a pixel portion, the pixel portion comprising:
a transistor comprising:
a gate electrode;
a first insulating layer over the gate electrode;
an oxide semiconductor layer over the first insulating layer, the oxide semiconductor layer comprising a channel formation region;
a second insulating layer over and in contact with the oxide semiconductor layer, the second insulating layer overlapping with the channel formation region;
a source electrode over and in contact with a first region of the oxide semiconductor layer; and
a drain electrode over and in contact with a second region of the oxide semiconductor layer;
a capacitor;
a light-emitting element electrically connected to the transistor, the light-emitting element comprising:
a first electrode;
an EL layer over the first electrode; and
a second electrode over the EL layer;
a color filter under the first electrode; and
a third insulating layer in contact with a side surface and a top surface of the oxide semiconductor layer,
wherein the oxide semiconductor layer comprises indium, gallium, and zinc,
wherein the second insulating layer is different from the third insulating layer,
wherein each of the second insulating layer and the third insulating layer comprises silicon oxide,
wherein a carrier concentration of the first region is higher than a carrier concentration of the channel formation region,
wherein a carrier concentration of the second region is higher than the carrier concentration of the channel formation region,
wherein the second insulating layer comprises a region overlapping with the capacitor,
wherein the first electrode comprises a region overlapping with the channel formation region and the capacitor, and
wherein the capacitor comprises the first insulating layer as a dielectric.
17. The display device according to claim 16 , wherein each of the source electrode and the drain electrode comprises copper.
18. The display device according to claim 16 , wherein the color filter is provided between the oxide semiconductor layer and the first electrode.
19. The display device according to claim 16 , wherein the first electrode comprises a region overlapping with the source electrode and the drain electrode.
20. The display device according to claim 16 , wherein the oxide semiconductor layer comprises a crystalline region.