3D semiconductor device and structure with metal layers
A semiconductor device including: a first silicon layer including a first single crystal silicon layer; first transistors with a single crystal channel and overlaid by a first metal layer; overlaid by a second metal layer; overlaid by a third metal layer; a second level with second transistors and including a metal gate, and then disposed over the third metal layer; the second level is overlaid by a third level with third transistors; and then overlaid by a fourth metal layer; fourth overlaid by a fifth metal layer; parts of the second transistors are made with Atomic Layer Deposition (“ALD”); the fifth metal layer average thickness is greater than the third metal layer average thickness by at least 50%; at least one element within at least one of the second transistors has been processed independently of the third transistors.
1. A semiconductor device, the device comprising:
a first silicon layer comprising a first single crystal silicon layer;
a plurality of first transistors each comprising a single-crystal channel;
a first metal layer disposed over said plurality of first transistors;
a second metal layer disposed over said first metal layer;
a third metal layer disposed over said second metal layer;
a second level comprising a plurality of second transistors, said second level is disposed over said third metal layer;
a third level comprising a plurality of third transistors, said third level is disposed over said second level;
a fourth metal layer disposed over said third level;
a fifth metal layer disposed over said fourth metal layer;
a via disposed through said second level,
wherein at least one of said plurality of second transistors comprises a metal gate,
wherein processing of said second transistors comprises use of Atomic Layer Deposition (“ALD”),
wherein an average thickness of said fifth metal layer is greater than an average thickness of said third metal layer by at least 50%; and
wherein at least one element within at least one of said plurality of second transistors has been processed independently of said plurality of third transistors.
2. The device according to claim 1 ,
wherein an average thickness of said second level is less than two microns.
3. The device according to claim 1 ,
wherein said fourth metal layer is aligned to said first metal layer with a less than 100 nm alignment error.
4. The device according to claim 1 ,
wherein said via has a diameter of less than 450 nm.
5. The device according to claim 1 ,
wherein an average thickness of said second metal layer is greater than an average thickness of said third metal layer by at least 50%.
6. The device according to claim 1 ,
wherein an average thickness of said fifth metal layer is greater than an average thickness of said fourth metal layer by at least 50%.
7. The device according to claim 1 ,
wherein said fifth metal layer comprises a portion of a global power distribution grid.
8. A semiconductor device, the device comprising:
a first silicon layer comprising a first single crystal silicon layer;
a plurality of first transistors each comprising a single crystal channel;
a first metal layer disposed over said plurality of first transistors;
a second metal layer disposed over said first metal layer;
a third metal layer disposed over said second metal layer;
a second level comprising a plurality of second transistors, said second level disposed over said third metal layer;
a third level comprising a plurality of third transistors, said third level is disposed over said second level;
a fourth metal layer disposed over said third level;
a fifth metal layer disposed over said fourth metal layer;
a via disposed through said second level,
wherein at least one of said plurality of second transistors comprises a metal gate,
wherein an average thickness of said fifth metal layer is greater than an average thickness of said third metal layer by at least 50%; and
at least one Electrostatic discharge (“ESD”) structure,
wherein at least one element within at least one of said plurality of second transistors has been processed independently of said plurality of third transistors.
9. The device according to claim 8 ,
wherein an average thickness of said second level is less than two microns, and
wherein processing of said second transistors comprises use of Atomic Layer Deposition (“ALD”).
10. The device according to claim 8 ,
wherein said fourth metal layer is aligned to said first metal layer with a less than 40 nm alignment error.
11. The device according to claim 8 ,
wherein said via has a diameter of less than 450 nm.
12. The device according to claim 8 ,
wherein an average thickness of said second metal layer is greater than an average thickness of said third metal layer by at least 50%.
13. The device according to claim 8 ,
wherein an average thickness of said fifth metal layer is greater than an average thickness of said fourth metal layer by at least 50%.
14. The device according to claim 8 , further comprising:
a third level comprising a second single crystal silicon layer,
wherein said third level is disposed over said fifth metal layer.
15. A semiconductor device, the device comprising:
a first silicon layer comprising a first single crystal silicon layer;
a plurality of first transistors each comprising a single crystal channel;
a first metal layer disposed over said plurality of first transistors;
a second metal layer disposed over said first metal layer;
a third metal layer disposed over said second metal layer;
a second level comprising a plurality of second transistors, said second level disposed over said third metal layer;
a third level comprising a plurality of third transistors, said third level is disposed over said second level;
a fourth metal layer disposed over said third level;
a fifth metal layer disposed over said fourth metal layer; and
a via disposed through said second level,
wherein at least one of said plurality of second transistors comprises a metal gate,
wherein an average thickness of said fifth metal layer is greater than an average thickness of said third metal layer by at least 50%,
wherein an average thickness of said second metal layer is greater than an average thickness of said third metal layer by at least 50%, and
wherein at least one element within at least one of said plurality of second transistors has been processed independently of said plurality of third transistors.
16. The device according to claim 15 ,
wherein an average thickness of said second level is less than two microns, and
wherein processing of said second transistors comprises use of Atomic Layer Deposition (“ALD”).
17. The device according to claim 15 ,
wherein said fourth metal layer is aligned to said first metal layer with a less than 40 nm alignment error.
18. The device according to claim 15 ,
wherein said via has a diameter of less than 450 nm.
19. The device according to claim 15 ,
wherein an average thickness of said fifth metal layer is greater than an average thickness of said fourth metal layer by at least 50%.
20. The device according to claim 15 , further comprising:
a third level comprising a second single crystal silicon layer,
wherein said third level is disposed over said fifth metal layer.